� ON Semiconductor 2N5655 Plastic NPN Silicon 2N5657 High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line 0.5 AMPERE relays. POWER TRANSISTORS • Excellent DC Current Gain – NPN SILICON h = 30–250 @ I = 100 mAdc FE C 250–350 VOLTS 20 WATTS • Current–Gain – Bandwidth Product – f = 10 MHz (Min) @ I = 50 mAdc T C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating Symbol 2N5655 2N5657 Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage V 250 350 Vdc CEO ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage V 275 375 Vdc CB ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ STYLE 1: PIN 1. EMITTER Emitter–Base Voltage V 6.0 Vdc EB ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2. COLLECTOR 3 2 1 3. BASE Collector Current – Continuous I 0.5 Adc C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Peak 1.0 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CASE 77–09 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current I 0.25 Adc B TO–225AA TYPE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ T = 25�C P 20 Watts C D Derate above 25�C 0.16 W/�C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction T , T –65 to +150 �C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ J stg Temperature Range ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Max Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case θ 6.25 �C/W ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ JCÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (1) Indicates JEDEC Registered Data. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 40 30 50 mH X 20 200 H RELAY TO SCOPE g + + 6.0 V 50 V 10 - Y 300 1.0 0 25 50 75 100 125 150 T , CASE TEMPERATURE ( °C) C Figure 1. Power Derating Figure 2. Sustaining Voltage Test Circuit Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed.  Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: April, 2002 – Rev. 7 2N5655/D P , POWER DISSIPATION (WATTS) D 2N5655 2N5657 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *ELECTRICAL CHARACTERISTICS (T = 25�C unless otherwise noted) C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage 2N5655 V 250 – Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CEO(sus)ÎÎÎÎÎÎÎÎÎÎ (I = 100 mAdc (inductive), L = 50 mH) 2N5657 350 – C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Breakdown Voltage 2N5655 V 250 – Vdc (BR)CEO ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I = 1.0 mAdc, I = 0) 2N5657 350 – C B Collector Cutoff Current I mAdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CEOÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (V = 150 Vdc, I = 0) 2N5655 CE B – 0.1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (V = 250 Vdc, I = 0) 2N5657 CE B – 0.1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current I mAdc CEX (V = 250 Vdc, V = 1.5 Vdc) 2N5655 CE EB(off) – 0.1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (V = 350 Vdc, V = 1.5 Vdc) 2N5657 CE EB(off) – 0.1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (V = 150 Vdc, V = 1.5 Vdc, T = 100�C) 2N5655 CE EB(off) C – 1.0 (V = 250 Vdc, V = 1.5 Vdc, T = 100�C) 2N5657 CE EB(off) C – 1.0 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current I μAdc CBO ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (V = 275 Vdc, I = 0) 2N5655 CB E – 10 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (V = 375 Vdc, I = 0) 2N5657ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CB E – 10 Emitter Cutoff Current (V = 6.0 Vdc, I = 0) I – 10 μAdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ EB CÎÎÎÎÎÎÎÎÎÎ EBOÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain (1) h – FE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I = 50 mAdc, V = 10 Vdc) C CE 25 – (I = 100 mAdc, V = 10 Vdc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ C CEÎÎÎÎÎÎÎÎ 30ÎÎÎÎ 250ÎÎÎÎ (I = 250 mAdc, V = 10 Vdc) C CE 15 – ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I = 500 mAdc, V = 10 Vdc) C CE 5.0 – ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Saturation Voltage (1) V Vdc CE(sat) (I = 100 mAdc, I = 10 mAdc) C B – 1.0 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I = 250 mAdc, I = 25 mAdc) C B – 2.5 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I = 500 mAdc, I = 100 mAdc) C B – 10 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base–Emitter Voltage (1) (I = 100 mAdc, V = 10 Vdc) V – 1.0 Vdc C CE BE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current–Gain – Bandwidth Product (2) (I = 50 mAdc, V = 10 Vdc, f = 10 MHz) f 10 – MHz C CE T ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Capacitance (V = 10 Vdc, I = 0, f = 100 kHz) C – 25 pF CB E ob ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Small–Signal Current Gain (I = 100 mAdc, V = 10 Vdc, f = 1.0 kHz) h 20 – – C CE fe ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Indicates JEDEC Registered Data for 2N5655 Series.ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (1) Pulse Test: Pulse Width � 300 μs, Duty Cycle � 2.0%. (2) f is defined as the frequency at which |h | extrapolates to unity. T fe 1.0 There are two limitations on the power handling ability of 10 a transistor: average junction temperature and second μs 0.5 breakdown. Safe operating area curves indicate I – V C CE 500 limits of the transistor that must be observed for reliable T = 150 °C μs J operation; i.e., the transistor must not be subjected to greater 0.2 1.0 ms dissipation than the curves indicate. d 0.1 c The data of Figure 3 is based on T = 150�C; T is J(pk) C Second Breakdown Limit variable depending on conditions. Second breakdown pulse Thermal Limit @ T = 25 °C C limits are valid for duty cycles to 10% provided T 0.05 J(pk) Bonding Wire Limit � 150�C. At high case temperatures, thermal limitations Curves apply below rated V CEO 2N5655 0.02 will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 2N5657 0.01 20 30 40 60 100 200 300 400 600 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 3. Active–Region Safe Operating Area http://onsemi.com 2 I , COLLECTOR CURRENT (AMP) C 2N5655 2N5657 300 200 V = 10 V CE V = 2.0 V CE T = +150 °C J 100 70 +100°C 50 +25°C 30 20 -�55°C 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 I , COLLECTOR CURRENT (mA) C Figure 4. Current Gain 1.0 300 T = +25 °C 200 J C 0.8 ib V @ I /I = 10 BE(sat) C B 100 V @ V = 10 V BE CE 0.6 70 50 0.4 30 V @ I /I = 10 CE(sat) C B 0.2 20 T = +25 °C C J ob I /I = 5.0 C B 0 10 10 20 30 50 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I , COLLECTOR CURRENT (mA) V , REVERSE VOLTAGE (VOLTS) C R Figure 5. “On” Voltages Figure 6. Capacitance 10 10 I /I = 10 C B t 5.0 r I /I = 10 C B V = 300 V, V = 2.0 V 5.0 CC BE(off) (2N5657, only) 2.0 V = 100 V, V = 0 V CC BE(off) 1.0 t 2.0 s 0.5 t 1.0 f t d 0.2 V = 100 V 0.5 CC 0.1 0.05 V = 300 V 0.2 CC 0.02 (Type 2N5657, only) 0.01 0.1 1.0 2.0 5.0 10 20 50 100 200 500 1.0 2.0 5.0 10 20 50 100 200 500 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 7. Turn–On Time Figure 8. Turn–Off Time http://onsemi.com 3 V, VOLTAGE (VOLTS) t, TIME (��s) μ h , DC CURRENT GAIN FE t, TIME (��s) μ C, CAPACITANCE (pF) 2N5655 2N5657 PACKAGE DIMENSIONS TO–225AA CASE 77–09 ISSUE W –B– NOTES: F U C 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. Q 2. CONTROLLING DIMENSION: INCH. M INCHES MILLIMETERS –A– DIM MIN MAX MIN MAX 13 2 A 0.425 0.435 10.80 11.04 B 0.295 0.305 7.50 7.74 C 0.095 0.105 2.42 2.66 D 0.020 0.026 0.51 0.66 H F 0.115 0.130 2.93 3.30 K G 0.094 BSC 2.39 BSC H 0.050 0.095 1.27 2.41 J 0.015 0.025 0.39 0.63 K 0.575 0.655 14.61 16.63 M 5 TYP �� 5 TYP J V Q 0.148 0.158 3.76 4.01 G R R 0.045 0.065 1.15 1.65 S 0.025 0.035 0.64 0.88 0.25 (0.010) M A M B M S U 0.145 0.155 3.69 3.93 V 0.040 --- 1.02 --- D 2 PL M M M 0.25 (0.010) A B STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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PUBLICATION ORDERING INFORMATION Literature Fulfillment: JAPAN: ON Semiconductor, Japan Customer Focus Center Literature Distribution Center for ON Semiconductor 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 P.O. Box 5163, Denver, Colorado 80217 USA Phone: 81–3–5740–2700 Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Email: r14525@onsemi.com Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Email: ONlit@hibbertco.com For additional information, please contact your local N. American Technical Support: 800–282–9855 Toll Free USA/Canada Sales Representative. 2N5655/D http://onsemi.com 4