� ON Semiconductor 2N5194 Silicon PNP Power Transistors * 2N5195 . . . for use in power amplifier and switching circuits, — excellent *ON Semiconductor Preferred Device safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS SILICON PNP 60–80 VOLTS *MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating Symbol 2N5194 2N5195 Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage V 60 80 Vdc CEO ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage V 60 80 Vdc CB ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage V 5.0 Vdc EB ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current I 4.0 Adc C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current I 1.0 Adc B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ T = 25�C P 40 Watts STYLE 1: C D ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ PIN 1. EMITTER Derate above 25�C 320 mW/�C 3 2. COLLECTOR 2 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 1 3. BASE Operating and Storage Junction T , T –65 to +150 �C/W J stg ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CASE 77–09 Characteristic Symbol Max Unit TO–225AA TYPE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case θ 3.12 �C/W JC ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *ELECTRICAL CHARACTERISTICS (T = 25�C unless otherwise noted) C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Sustaining Voltage (1) V Vdc CEO(sus) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I = 0.1 Adc, I = 0) 2N5194 C B 60 — 2N5195 80 — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current I mAdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CEOÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (V = 60 Vdc, I = 0) 2N5194 CE B — 1.0 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (V = 80 Vdc, I = 0) 2N5195 CE B — 1.0 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current I mAdc CEX (V = 60 Vdc, V = 1.5 Vdc) 2N5194 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CE BE(off) — 0.1 (V = 80 Vdc, V = 1.5 Vdc) 2N5195 CE BE(off) — 0.1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (V = 60 Vdc, V = 1.5 Vdc, T = 125�C) 2N5194 CE BE(off) C — 2.0 (V = 80 Vdc, V = 1.5 Vdc, T = 125�C) 2N5195 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CE BE(off) C — 2.0 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff CurrentÎÎÎÎÎÎÎÎÎÎÎÎ IÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ mAdc CBO (V = 60 Vdc, I = 0) 2N5194 — 0.1 CB E ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (V = 80 Vdc, I = 0) 2N5195 — 0.1 CB E ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current I — 1.0 mAdc EBO ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (V = 5.0 Vdc, I = 0)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BE C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Indicates JEDEC Registered Data.ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (1) Pulse Test: Pulse Width � 300 μs, Duty Cycle � 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: April, 2002 – Rev. 10 2N5194/D 2N5194 2N5195 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *ELECTRICAL CHARACTERISTICS — continued (T = 25�C unless otherwise noted) C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain (2) h — FE (I = 1.5 Adc, V = 2.0 Vdc) 2N5194 25 100 C CE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2N5195 20 80 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I = 4.0 Adc, V = 2.0 Vdc) 2N5194 C CE 10 — 2N5195 7.0 — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Saturation Voltage (2) V Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CE(sat)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I = 1.5 Adc, I = 0.15 Adc) C B — 0.6 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ (I = 4.0 Adc, I = 1.0 Adc) C B — 1.4 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base–Emitter On Voltage (2) V — 1.2 Vdc BE(on) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I = 1.5 Adc, V = 2.0 Vdc)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ C CE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current–Gain — Bandwidth Product f 2.0 — MHz ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ T (I = 1.0 Adc, V = 10 Vdc, f = 1.0 MHz) C CE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Indicates JEDEC Registered Data. (2) Pulse Test: Pulse Width � 300 μs, Duty Cycle � 2.0%. 10 T = 150 °C J 7.0 V = 2.0 V CE V = 10 V 5.0 CE 3.0 2.0 1.0 25°C -�55°C 0.7 0.5 0.3 0.2 0.1 0.004 0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 I , COLLECTOR CURRENT (AMP) C Figure 1. DC Current Gain 2.0 1.6 1.2 I = 10 mA 100 mA 1.0 A 3.0 A C 0.8 T = 25 °C J 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 I , BASE CURRENT (mA) B Figure 2. Collector Saturation Region http://onsemi.com 2 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) h , DC CURRENT GAIN (NORMALIZED) CE FE 2N5194 2N5195 2.0 +�2.5 *APPLIES FOR I /I ≤ h @ V C B FE CE +�2.0 T = 25 °C J T = -�65 °C to +150 °C J 1.6 +�1.5 +�1.0 1.2 +�0.5 *θV for V C CE(sat) 0 0.8 -�0.5 V @ I /I = 10 BE(sat) C B V @ V = 2.0 V BE CE -�1.0 0.4 -�1.5 θV for V B BE -�2.0 V @ I /I = 10 CE(sat) C B 0 -�2.5 0.005 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 0.005 0.01 0.020.030.05 0.1 0.20.3 0.5 1.0 2.0 3.0 4.0 I , COLLECTOR CURRENT (AMP) I , COLLECTOR CURRENT (AMP) C C Figure 3. “On” Voltage Figure 4. Temperature Coefficients 3 10 7 10 V = 30 Vdc V = 30 V CE CE 2 10 6 10 T = 150 °C J I = 10 x I C CES 1 10 5 10 100°C 0 10 I = 2 x I C CES I ≈ I C CES 4 10 -1 REVERSE FORWARD 10 (TYPICAL I VALUES CES 3 25°C 10 -�2 10 OBTAINED FROM FIGURE 5) I CES -�3 10 2 10 +�0.4 +�0.3 +�0.2 +�0.1 0 -�0.1 -�0.2 -�0.3 -�0.4 -�0.5 -�0.6 20 40 60 80 100 120 140 160 V , BASE-EMITTER VOLTAGE (VOLTS) BE T , JUNCTION TEMPERATURE ( °C) J Figure 5. Collector Cut–Off Region Figure 6. Effects of Base–Emitter Resistance V R CC C 500 TURN-ON PULSE V T = 25 °C BE(off) J V 0 in R V B SCOPE in 300 APPROX C �<<�C -11 V jd eb 200 t 1 APPROX +�4.0 V +�9.0 V t 2 C eb R AND R VARIED B C 100 TO OBTAIN DESIRED C V cb in CURRENT LEVELS 70 APPROX t ≤ 7.0 ns 1 -11 V t 3 100 < t < 500 μs 50 2 TURN-OFF PULSE 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 40 t < 15 ns 3 DUTY CYCLE ≈ 2.0% V , REVERSE VOLTAGE (VOLTS) R Figure 7. Switching Time Equivalent Test Circuit Figure 8. Capacitance http://onsemi.com 3 I , COLLECTOR CURRENT (��A) μ C VOLTAGE (VOLTS) θ , TEMPERATURE COEFFICIENTS (mV/ C) ° , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) R V CAPACITANCE (pF) BE 2N5194 2N5195 2.0 2.0 I = I B1 B2 I /I = 10 C B t ′ s I /I = 10 1.0 1.0 C B T = 25 °C J t ′ = t - 1/8 t s s f 0.7 0.7 T = 25 °C J 0.5 0.5 t @ V = 30 V r CC t @ V = 30 V 0.3 0.3 f CC 0.2 0.2 t @ V = 10 V t @ V = 10 V f CC r CC 0.1 0.1 0.07 0.07 0.05 0.05 t @ V = 2.0 V d BE(off) 0.03 0.03 0.02 0.02 0.050.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 4.0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 4.0 I , COLLECTOR CURRENT (AMP) I , COLLECTOR CURRENT (AMP) C C Figure 9. Turn–On Time Figure 10. Turn–Off Time Note 1: 10 There are two limitations on the power handling ability of 1.0 ms a transistor; average junction temperature and second 5.0 ms 5.0 breakdown. Safe operating area curves indicate I – V C CE 100 μs T = 150 °C J limits of the transistor that must be observed for reliable 2.0 dc operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 1.0 SECONDARY BREAKDOWN LIMIT The data of Figure 11 is based on T = 150�C. T is J(pk) C THERMAL LIMIT @ T = 25 °C C variable depending on conditions. Second breakdown pulse 0.5 BONDING WIRE LIMIT limits are valid for duty cycles to 10% provided T J(pk) CURVES APPLY BELOW RATED V CEO � 150�C. At high–case temperatures, thermal limitations 0.2 2N5194 will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 2N5195 0.1 1.0 2.0 5.0 10 20 50 100 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 11. Rating and Thermal Data Active–Region Safe Operating Area 1.0 0.7 D = 0.5 θ = 3.12 °C/W 0.5 JC(max) 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 0.01 0.03 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 t, TIME OR PULSE WIDTH (ms) Figure 12. Thermal Response http://onsemi.com 4 r(t), EFFECTIVE TRANSIENT I , COLLECTOR CURRENT (AMP) t, TIME (��s) μ C THERMAL RESISTANCE (NORMALIZED) t, TIME (��s) μ 2N5194 2N5195 DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA A train of periodical power pulses can be represented by t P the model shown in Figure 13. Using the model and the device thermal response, the normalized effective transient P P P P thermal resistance of Figure 12 was calculated for various duty cycles. To find θ (t), multiply the value obtained from Figure 12 JC by the steady state value θ . JC Example: t 1 The 2N5193 is dissipating 50 watts under the following conditions: t = 0.1 ms, t = 0.5 ms. (D = 0.2). 1/f 1 p t Using Figure 12, at a pulse width of 0.1 ms and D = 0.2, 1 DUTY CYCLE, D = t f = 1 t P the reading of r(t , D) is 0.27. 1 PEAK PULSE POWER = P P The peak rise in junction temperature is therefore: Figure 13. ΔT = r(t) x P x θ = 0.27 x 50 x 3.12 = 42.2�C P JC http://onsemi.com 5 2N5194 2N5195 PACKAGE DIMENSIONS TO–225AA CASE 77–09 ISSUE W –B– NOTES: F U C 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. Q 2. CONTROLLING DIMENSION: INCH. M INCHES MILLIMETERS –A– DIM MIN MAX MIN MAX 13 2 A 0.425 0.435 10.80 11.04 B 0.295 0.305 7.50 7.74 C 0.095 0.105 2.42 2.66 D 0.020 0.026 0.51 0.66 H F 0.115 0.130 2.93 3.30 K G 0.094 BSC 2.39 BSC H 0.050 0.095 1.27 2.41 J 0.015 0.025 0.39 0.63 K 0.575 0.655 14.61 16.63 M 5 TYP �� 5 TYP J V Q 0.148 0.158 3.76 4.01 G R R 0.045 0.065 1.15 1.65 S 0.025 0.035 0.64 0.88 M M M 0.25 (0.010) A B S U 0.145 0.155 3.69 3.93 V 0.040 --- 1.02 --- D 2 PL M M M 0.25 (0.010) A B STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE http://onsemi.com 6 2N5194 2N5195 Notes http://onsemi.com 7 2N5194 2N5195 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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