ON SEMICONDUCTOR 2N5191
Description
TRANS NPN PWR GP 4A 60V TO225AA
Part Number
2N5191
Price
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Manufacturer
ON SEMICONDUCTOR
Lead Time
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Category
PRODUCTS - 2
Datasheet
2228623_1.pdf
45 KiB
Extracted Text
2N5191 2N5192 ® MEDIUM POWER NPN SILICON TRANSISTORS � STMicroelectronics PREFERRED SALESTYPES � NPN TRANSISTOR APPLICATIONS � LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 1 The 2N5191 and 2N5192 are silicon 2 3 epitaxial-base NPN transistors in Jedec SOT-32 plastic package. SOT-32 They are inteded for use in medium power linear and switching applications. The complementary PNP type of 2N5192 is 2N5195. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N5191 2N5192 Unit VCBO Collector-Base Voltage (IE = 0) 60 80 V V Collector-Emitter Voltage (I = 0) 60 80 V CEO B V Emitter-Base Voltage (I = 0) 5 V EBO C I Collector Current 4 A C I Collector Peak Current 7 A CM I Base Current 1 A B o P 40 W tot Total Dissipation at T ≤ 25 C c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j 1/4 December 2000 2N5191 / 2N5192 THERMAL DATA o R Thermal Resistance Junction-case Max 3.12 C/W thj-case o R Thermal Resistance Junction-ambient Max 100 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = rated V 0.1 mA CBO CB CBO Current (I = 0) E I Collector Cut-off V = rated V 0.1 mA CEX CE CEO o Current (V = -1.5V) V = rated V T = 125 C 2 mA BE CE CEO c I Collector Cut-off V = rated V 1mA CEO CE CEO Current (I = 0) B I Emitter Cut-off Current V = 5 V 1 mA EBO EB (I = 0) C VCEO(sus)∗ Collector-Emitter IC = 100 mA Sustaining Voltage for 2N5191 60 V for 2N5192 80 V VCE(sat)∗ Collector-Emitter IC = 1.5 A IB = 0.15 A 0.6 V Saturation Voltage I = 4 A I = 1 A 1.4 V C B V ∗ Base-Emitter Voltage I = 1.5 A V = 2 V 1.2 V BE C CE h ∗ DC Current Gain I = 1.5 A V = 2 V FE C CE for 2N5191 25 100 for 2N5192 20 80 IC = 4 A VCE = 2 V for 2N5191 10 for 2N5192 7 f Transition frequency I = 1 A V = 10 V 2 MHz T C CE ∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 % 2/4 2N5191 / 2N5192 SOT-32 (TO-126) MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.040 0.106 c1 1.0 1.3 0.039 0.050 D 15.4 16.0 0.606 0.629 e 2.2 0.087 e3 4.15 4.65 0.163 0.183 F 3.8 0.150 G 3 3.2 0.118 0.126 H 2.54 0.100 H2 c1 0016114 3/4 2N5191 / 2N5192 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4
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