ON Semiconductor� Amplifier Transistors 2N5088 NPN Silicon 2N5089 MAXIMUM RATINGS Rating Symbol 2N5088 2N5089 Unit Collector–Emitter Voltage V 30 25 Vdc CEO Collector–Base Voltage V 35 30 Vdc CBO Emitter–Base Voltage V 3.0 Vdc EBO Collector Current — Continuous I 50 mAdc C 1 2 Total Device Dissipation @ T = 25°C P 625 mW A D 3 Derate above 25°C 5.0 mW/°C CASE 29–11, STYLE 1 Total Device Dissipation @ T = 25°C P 1.5 Watts C D TO–92 (TO–226AA) Derate above 25°C 12 mW/°C Operating and Storage Junction T , T –55 to +150 °C J stg Temperature Range COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 2 (1) Thermal Resistance, Junction to Ambient R 200 °C/W �JA BASE Thermal Resistance, Junction to Case R 83.3 °C/W �JC 1 EMITTER ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS (2) Collector–Emitter Breakdown Voltage V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 2N5088 30 — C B 2N5089 25 — Collector–Base Breakdown Voltage V Vdc (BR)CBO (I = 100 �Adc, I = 0) 2N5088 35 — C E 2N5089 30 — Collector Cutoff Current I nAdc CBO (V = 20 Vdc, I = 0) 2N5088 — 50 CB E (V = 15 Vdc, I = 0) 2N5089 — 50 CB E Emitter Cutoff Current I nAdc EBO (V = 3.0 Vdc, I = 0) — 50 EB(off) C (V = 4.5 Vdc, I = 0) — 100 EB(off) C 1. R is measured with the device soldered into a typical printed circuit board. θJA 2. Pulse Test: Pulse Width ≤ 300 �s, Duty Cycle ≤ 2.0%.  Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: November, 2001 – Rev. 1 2N5088/D 2N5088 2N5089 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued) A Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain h — FE (I = 100 μAdc, V = 5.0 Vdc) 2N5088 300 900 C CE 2N5089 400 1200 (I = 1.0 mAdc, V = 5.0 Vdc) 2N5088 350 — C CE 2N5089 450 — (2) (I = 10 mAdc, V = 5.0 Vdc) 2N5088 300 — C CE 2N5089 400 — Collector–Emitter Saturation Voltage V — 0.5 Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) C B Base–Emitter On Voltage V — 0.8 Vdc BE(on) (2) (I = 10 mAdc, V = 5.0 Vdc) C CE SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product f 50 — MHz T (I = 500 μAdc, V = 5.0 Vdc, f = 20 MHz) C CE Collector–Base Capacitance C — 4.0 pF cb (V = 5.0 Vdc, I = 0, f = 1.0 MHz) CB E Emitter–Base Capacitance C — 10 pF eb (V = 0.5 Vdc, I = 0, f = 1.0 MHz) EB C Small–Signal Current Gain h — fe (I = 1.0 mAdc, V = 5.0 Vdc, f = 1.0 kHz) 2N5088 350 1400 C CE 2N5089 450 1800 Noise Figure NF dB (I = 100 μAdc, V = 5.0 Vdc, R = 1.0 kΩ, 2N5088 — 3.0 C CE S f = 1.0 kHz) 2N5089 — 2.0 2. Pulse Test: Pulse Width ≤ 300 �s, Duty Cycle ≤ 2.0%. R S i n e n IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 2N5088 2N5089 NOISE CHARACTERISTICS (V = 5.0 Vdc, T = 25°C) CE A NOISE VOLTAGE 30 30 BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz 20 20 I = 10 mA R ≈ 0 C R ≈ 0 S S f = 10 Hz 3.0 mA 10 10 100 Hz 1.0 mA 7.0 7.0 10 kHz 1.0 kHz 5.0 5.0 300 μA 100 kHz 3.0 3.0 10 20 50 100 200 500 1�k 2�k 5�k 10�k 20�k 50�k 100�k 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 f, FREQUENCY (Hz) I , COLLECTOR CURRENT (mA) C Figure 2. Effects of Frequency Figure 3. Effects of Collector Current 10 20 BANDWIDTH = 1.0 Hz 7.0 5.0 I = 10 mA C 16 3.0 BANDWIDTH = 10 Hz to 15.7 kHz 2.0 3.0 mA 12 1.0 mA 1.0 I = 1.0 mA C 0.7 500 μA 8.0 300 μA 0.5 100 μA 0.3 100 μA 10 μA 4.0 0.2 10 μA 30 μA R ≈ 0 S 0 0.1 10 20 50 100 200 500 1�k 2�k 5�k 10�k 20�k 50�k 100�k 10 20 50 100 200 500 1�k 2�k 5�k 10�k 20�k 50�k 100�k f, FREQUENCY (Hz) R , SOURCE RESISTANCE (OHMS) S Figure 4. Noise Current Figure 5. Wideband Noise Figure 100 Hz NOISE DATA 300 20 200 BANDWIDTH = 1.0 Hz I = 10 mA C 3.0 mA 16 I = 10 mA C 100 μA 100 70 3.0 mA 1.0 mA 50 12 1.0 mA 30 300 μA 300 μA 20 30 μA 8.0 100 μA 10 10 μA 4.0 30 μA 7.0 10 μA 5.0 BANDWIDTH = 1.0 Hz 3.0 0 10 20 50 100 200 500 1�k 2�k 5�k 10�k 20�k 50�k 100�k 10 20 50 100 200 500 1�k 2�k 5�k 10�k 20�k 50�k 100�k R , SOURCE RESISTANCE (OHMS) R , SOURCE RESISTANCE (OHMS) S S Figure 6. Total Noise Voltage Figure 7. Noise Figure http://onsemi.com 3 V , TOTAL NOISE VOLTAGE (nV) I , NOISE CURRENT (pA) e , NOISE VOLTAGE (nV) T n n NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) e , NOISE VOLTAGE (nV) n 2N5088 2N5089 4.0 3.0 V = 5.0 V CE 2.0 T = 125 °C A 25°C 1.0 -�55°C 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 I , COLLECTOR CURRENT (mA) C Figure 8. DC Current Gain 1.0 -�0.4 T = 25 °C J 0.8 -�0.8 0.6 V @ V = 5.0 V -�1.2 BE CE T = 25 °C to 125 °C 0.4 -�1.6 J 0.2 -�2.0 -�55°C to 25 °C V @ I /I = 10 CE(sat) C B 0 -�2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 9. “On” Voltages Figure 10. Temperature Coefficients 8.0 500 6.0 T = 25 °C J 300 C ob C ib 4.0 C eb 200 3.0 C cb 2.0 100 V = 5.0 V CE 70 T = 25 °C 1.0 J 0.8 50 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 V , REVERSE VOLTAGE (VOLTS) I , COLLECTOR CURRENT (mA) R C Figure 11. Capacitance Figure 12. Current–Gain — Bandwidth Product http://onsemi.com 4 C, CAPACITANCE (pF) V, VOLTAGE (VOLTS) h , DC CURRENT GAIN (NORMALIZED) FE R , BASE-EMITTER θVBE f , CURRENT-GAIN � BANDWIDTH PRODUCT (MHz) TEMPERATURE COEFFICIENT (mV/ C) ° T 2N5088 2N5089 PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI B Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND P BEYOND DIMENSION K MINIMUM. L INCHES MILLIMETERS SEATING PLANE K DIM MIN MAX MIN MAX A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 D G 0.045 0.055 1.15 1.39 XX H 0.095 0.105 2.42 2.66 G J 0.015 0.020 0.39 0.50 J H K 0.500 --- 12.70 --- L 0.250 --- 6.35 --- V C N 0.080 0.105 2.04 2.66 P --- 0.100 --- 2.54 SECTION X–X R 0.115 --- 2.93 --- 1 N V 0.135 --- 3.43 --- STYLE 1: N PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 5 2N5088 2N5089 Notes http://onsemi.com 6 2N5088 2N5089 Notes http://onsemi.com 7 2N5088 2N5089 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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