� ON Semiconductor 2N4921 Medium-Power Plastic NPN thru Silicon Transistors * 2N4923 ...designed for driver circuits, switching, and amplifier *ON Semiconductor Preferred Device applications. These high–performance plastic devices feature: 1 AMPERE • Low Saturation Voltage — GENERAL–PURPOSE V = 0.6 Vdc (Max) @ I = 1.0 Amp CE(sat) C POWER TRANSISTORS • Excellent Power Dissipation Due to Thermopad Construction — 40–80 VOLTS P = 30 W @ T = 25�C D C 30 WATTS • Excellent Safe Operating Area • Gain Specified to I = 1.0 Amp C • Complement to PNP 2N4918, 2N4919, 2N4920 *MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ STYLE 1: Rating Symbol 2N4921 2N4922 2N4923 Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ PIN 1. EMITTER 3 2. COLLECTOR 2 Collector–Emitter Voltage V 40 60 80 Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CEOÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 1 3. BASE Collector–Base Voltage V 40 60 80 Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CBÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CASE 77–09 Emitter–Base Voltage V 5.0 Vdc TO–225AA TYPE EB ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous (1) I 1.0 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 3.0 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current — Continuous I 1.0 Adc B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ T = 25�C P 30 Watts C D ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25�C 0.24 W/�C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating & Storage Junction T , T –65 to +150 �C J stg Temperature Range ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS (2) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Max Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case θ 4.16 �C/W JC ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (1) The 1.0 Amp maximum I value is based upon JEDEC current gain requirements. C The 3.0 Amp maximum value is based upon actual current handling capability of the device (see Figures 5 and 6). (2) Recommend use of thermal compound for lowest thermal resistance. *Indicates JEDEC Registered Data. Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: April, 2002 – Rev. 10 2N4921/D 2N4921 thru 2N4923 40 30 20 10 0 25 50 75 100 125 150 T , CASE TEMPERATURE ( °C) C Figure 1. Power Derating Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed. http://onsemi.com 2 P , POWER DISSIPATION (WATTS) D 2N4921 thru 2N4923 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (T = 25�C unless otherwise noted) C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Sustaining Voltage (3) V Vdc CEO(sus) (I = 0.1 Adc, I = 0) 2N4921 40 — C B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2N4922 60 — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2N4923 80 — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current I mAdc CEO (V = 20 Vdc, I = 0) 2N4921 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CE B — 0.5 (V = 30 Vdc, I = 0) 2N4922 CE B — 0.5 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ (V = 40 Vdc, I = 0) 2N4923 CE B — 0.5 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current I mAdc CEX ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (V = Rated V , V = 1.5 Vdc) CE CEO EB(off) — 0.1 (V = Rated V , V = 1.5 Vdc, T = 125�C CE CEO EB(off) C — 0.5 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current I — 0.1 mAdc CBO ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (V = Rated V , I = 0) CB CB E ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current I — 1.0 mAdc EBO ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (V = 5.0 Vdc, I = 0) EB C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain (3) h — FE (I = 50 mAdc, V = 1.0 Vdc) C CE 40 — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I = 500 mAdc, V = 1.0 Vdc) C CE 30 150 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I = 1.0 Adc, V = 1.0 Vdc) C CE 10 — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Saturation Voltage (3) V — 0.6 Vdc CE(sat) (I = 1.0 Adc, I = 0.1 Adc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ C BÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base–Emitter Saturation Voltage (3) V — 1.3 Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BE(sat) (I = 1.0 Adc, I = 0.1 Adc) C B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base–Emitter On Voltage (3) V — 1.3 Vdc BE(on) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I = 1.0 Adc, V = 1.0 Vdc) C CE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ SMALL–SIGNAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current–Gain — Bandwidth Product (I = 250 mAdc, V = 10 Vdc, f = 1.0 MHz) f 3.0 — MHz C CE T ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Capacitance (V = 10 Vdc, I = 0, f = 100 kHz) C — 100 pF CB E ob ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Small–Signal Current Gain (I = 250 mAdc, V = 10 Vdc, f = 1.0 kHz) h 25 — — C CE fe ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (3) Pulse Test: PW ≈ 300 μs, Duty Cycle ≈ 2.0%. *Indicates JEDEC Registered Data. APPROX TURN-ON PULSE 5.0 +11 V V = 30 V I /I = 10, UNLESS NOTED CC t C B 1 V CC 3.0 I /I = 20 C B T = 25 °C R V J C in 2.0 T = 150 °C J V = 60 V V CC in R V B BE(off) 1.0 C �<<�C jd eb 0.7 t t 3 0.5 r -�4.0 V V = 30 V APPROX CC SCOPE 0.3 t +11 V t ≤ 15 ns d 1 V = 60 V CC 0.2 100 < t ≤ 500 μs 2 V = 2.0 V BE(off) V t ≤ 15 ns in 3 0.1 V = 30 V APPROX 9.0 V CC DUTY CYCLE ≈ 2.0% 0.07 V = 0 t BE(off) 2 R and R varied to B C 0.05 TURN-OFF PULSE 10 20 30 50 70 100 200 300 500 700 1000 obtain desired current levels I , COLLECTOR CURRENT (mA) C Figure 2. Switching Time Equivalent Circuit Figure 3. Turn–On Time http://onsemi.com 3 t, TIME (��s) μ 2N4921 thru 2N4923 1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 P 0.1 (pk) θ (t) = r(t) θ JC JC θ = 4.16 °C/W MAX JC 0.05 0.1 D CURVES APPLY FOR POWER 0.07 PULSE TRAIN SHOWN 0.01 t 1 0.05 READ TIME AT t 1 t 2 T - T = P θ (t) J(pk) C (pk) JC 0.03 DUTY CYCLE, D = t /t SINGLE PULSE 1 2 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 t, TIME (ms) Figure 4. Thermal Response 10 There are two limitations on the power handling ability of 7.0 a transistor: average junction temperature and second 100 μs 5.0 1.0 ms 5.0 ms breakdown. Safe operating area curves indicate I – V C CE 3.0 operation i.e., the transistor must not be subjected to greater 2.0 T = 150 °Cdc dissipation than the curves indicate. J The data of Figure 5 is based on T = 150�C; T J(pk) C 1.0 is variable depending on conditions. Second breakdown 0.7 SECOND BREAKDOWN pulse limits are valid for duty cycles to 10% provided T J(pk) LIMITED 0.5 � 150�C. At high case temperatures, thermal limitations BONDING WIRE LIMITED 0.3 will reduce the power that can be handled to values less than THERMALLY LIMITED @ T = 25 °C C 0.2 the limitations imposed by second breakdown. PULSE CURVES APPLY BELOW RATED V CEO 0.1 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 5. Active–Region Safe Operating Area 5.0 5.0 3.0 3.0 I /I = 20 C B I /I = 20 C B 2.0 2.0 1.0 1.0 0.7 I /I = 10 0.7 C B I /I = 20 C B 0.5 0.5 0.3 0.3 I /I = 10 C B 0.2 T = 25 °C 0.2 J T = 25 °C J T = 150 °C J T = 150 °C J I = I 0.1 B1 B2 0.1 V = 30 V CC t ′ = t - 1/8 t 0.07 s s f 0.07 I = I B1 B2 0.05 0.05 10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 6. Storage Time Figure 7. Fall Time http://onsemi.com 4 I , COLLECTOR CURRENT (AMP) t ′, STORAGE TIME (��s) μ C r(t), TRANSIENT THERMAL s RESISTANCE (NORMALIZED) t , FALLTIME (��s) μ f 2N4921 thru 2N4923 1000 1.0 700 V = 1.0 V CE 500 I = 0.1 A 0.25 A 0.5 A 1.0 A C 0.8 300 200 T = 150 °C J T = 25 °C 0.6 J 100 25°C 70 0.4 50 -�55°C 30 0.2 20 10 0 2.0 3.0 5.0 10 20 30 50 100 200300 500 1000 2000 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 I , COLLECTOR CURRENT (mA) I , BASE CURRENT (mA) C B Figure 8. Current Gain Figure 9. Collector Saturation Region 8 10 1.5 I = 10 x I V = 30 V C CES CE T = 25 °C J 7 10 1.2 I = 2 x I C CES 6 10 0.9 I ≈ I C CES V @ I /I = 10 BE(sat) C B 5 10 0.6 V @ V = 2.0 V BE CE I VALUES CES 4 10 OBTAINED FROM 0.3 FIGURE 12 V @ I /I = 10 CE(sat) C B 3 0 10 0 30 60 90 120 150 2.0 3.0 5.0 10 20 30 50 100 200300 500 1000 2000 T , JUNCTION TEMPERATURE ( °C) I , COLLECTOR CURRENT (mA) J C Figure 10. Effects of Base–Emitter Resistance Figure 11. “On” Voltage 4 10 +�2.5 h @�V �� 1.0�V +�2.0 FE� CE� T = 150 °C *APPLIES FOR I /I ≤ J 3 C B 10 2 +�1.5 +�1.0 100°C 2 T = 100 °C to 150 °C 10 J +�0.5 25°C *θ FOR V VC CE(sat) 1 10 0 -�55°C to +100 °C -�0.5 I = I C CES 0 10 V = 30 V -�1.0 CE -�1.5 -1 10 θ FOR V VB BE -�2.0 REVERSE FORWARD -�2 10 -�2.5 -�0.2 -�0.1 0 +�0.1 +�0.2 +�0.3 +�0.4 +�0.5 2.03.0 5.0 10 20 30 50 100 200300 500 1000 2000 V , BASE-EMITTER VOLTAGE (VOLTS) I , COLLECTOR CURRENT (mA) BE C Figure 12. Collector Cut–Off Region Figure 13. Temperature Coefficients http://onsemi.com 5 I , COLLECTOR CURRENT (��A) μ h , DC CURRENT GAIN , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) C R FE BE TEMPERATURE COEFFICIENTS (mV/ C) ° V , COLLECTOR-EMITTER VOLTAGE (VOLTS) VOLTAGE (VOLTS) CE 2N4921 thru 2N4923 PACKAGE DIMENSIONS CASE 77–08 TO–225AA TYPE ISSUE V –B– NOTES: F C U 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Q M –A– INCHES MILLIMETERS DIM MIN MAX MIN MAX 13 2 A 0.425 0.435 10.80 11.04 B 0.295 0.305 7.50 7.74 C 0.095 0.105 2.42 2.66 D 0.020 0.026 0.51 0.66 H F 0.115 0.130 2.93 3.30 K G 0.094 BSC 2.39 BSC H 0.050 0.095 1.27 2.41 J 0.015 0.025 0.39 0.63 K 0.575 0.655 14.61 16.63 M 5 TYP 5 TYP �� V J Q 0.148 0.158 3.76 4.01 G R R 0.045 0.055 1.15 1.39 S 0.025 0.035 0.64 0.88 M M M S 0.25 (0.010) A B U 0.145 0.155 3.69 3.93 V 0.040 --- 1.02 --- D 2 PL M M M 0.25 (0.010) A B STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE http://onsemi.com 6 2N4921 thru 2N4923 Notes http://onsemi.com 7 2N4921 thru 2N4923 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: JAPAN: ON Semiconductor, Japan Customer Focus Center Literature Distribution Center for ON Semiconductor 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 P.O. Box 5163, Denver, Colorado 80217 USA Phone: 81–3–5740–2700 Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Email: r14525@onsemi.com Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Email: ONlit@hibbertco.com For additional information, please contact your local N. American Technical Support: 800–282–9855 Toll Free USA/Canada Sales Representative. 2N4921/D http://onsemi.com 8