ON Semiconductor� General Purpose Transistors 2N4403 PNP Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V 40 Vdc CEO Collector–Base Voltage V 40 Vdc CBO Emitter–Base Voltage V 5.0 Vdc EBO Collector Current — Continuous I 600 mAdc C 1 2 Total Device Dissipation @ T = 25°C P 625 mW A D 3 Derate above 25°C 5.0 mW/°C CASE 29–11, STYLE 1 Total Device Dissipation @ T = 25°C P 1.5 Watt C D TO–92 (TO–226AA) Derate above 25°C 12 mW/°C Operating and Storage Junction T , T –55 to +150 °C J stg Temperature Range COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 2 Thermal Resistance, Junction to Ambient R 200 °C/W �JA BASE Thermal Resistance, Junction to Case R 83.3 °C/W �JC 1 EMITTER ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS (1) Collector–Emitter Breakdown Voltage V 40 — Vdc (BR)CEO (I = 1.0 mAdc, I = 0) C B Collector–Base Breakdown Voltage V 40 — Vdc (BR)CBO (I = 0.1 mAdc, I = 0) C E Emitter–Base Breakdown Voltage V 5.0 — Vdc (BR)EBO (I = 0.1 mAdc, I = 0) E C Base Cutoff Current I — 0.1 μAdc BEV (V = 35 Vdc, V = 0.4 Vdc) CE EB Collector Cutoff Current I — 0.1 μAdc CEX (V = 35 Vdc, V = 0.4 Vdc) CE EB 1. Pulse Test: Pulse Width ≤ 300 �s, Duty Cycle ≤ 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: June, 2001 – Rev. 0 2N4403/D 2N4403 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued) A Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain h — FE (I = 0.1 mAdc, V = 1.0 Vdc) 30 — C CE (I = 1.0 mAdc, V = 1.0 Vdc) 60 — C CE (I = 10 mAdc, V = 1.0 Vdc) 100 — C CE (1) (I = 150 mAdc, V = 2.0 Vdc) 100 300 C CE (1) (I = 500 mAdc, V = 2.0 Vdc) 20 — C CE (1) Collector–Emitter Saturation Voltage V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) — 0.4 C B (I = 500 mAdc, I = 50 mAdc) — 0.75 C B (1) Base–Emitter Saturation Voltage V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) 0.75 0.95 C B (I = 500 mAdc, I = 50 mAdc) — 1.3 C B SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product f MHz T (I = 20 mAdc, V = 10 Vdc, f = 100 MHz) 200 — C CE Collector–Base Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz) C — 8.5 pF CB E cb Emitter–Base Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz) C — 30 pF EB C eb Input Impedance h ohms ie (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 1.5 k 15 k C CE –4 Voltage Feedback Ratio (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 0.1 8.0 X 10 C CE re Small–Signal Current Gain h — fe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 60 500 C CE Output Admittance (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 1.0 100 μmhos C CE oe SWITCHING CHARACTERISTICS Delay Time t — 15 ns d (V (V = 30 Vdc, V 30 Vdc, V = +2.0 Vdc, +2.0 Vdc, CC CC BE BE I = 150 mAdc, I = 15 mAdc) C B1 Rise Time t — 20 ns r Storage Time t — 225 ns s (V (V = 30 Vdc, I 30 Vdc, I = 150 mAdc, 150 mAdc, CC CC C C I = 15 mA, I = 15 mA) B1 B2 Fall Time t — 30 ns f 1. Pulse Test: Pulse Width ≤ 300 �s, Duty Cycle ≤ 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUIT -�30 V -�30 V 200 Ω 200 Ω < 20 ns < 2 ns +2 V +14 V 0 0 1.0 k Ω 1.0 k Ω C * < 10 pF S C * < 10 pF S -16 V -�16 V 1.0 to 100 μs, 10 to 100 μs, DUTY CYCLE = 2% DUTY CYCLE = 2% +�4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn–On Time Figure 2. Turn–Off Time http://onsemi.com 2 2N4403 TRANSIENT CHARACTERISTICS 25°C 100°C 30 10 7.0 V = 30 V CC 5.0 20 I /I = 10 C B C eb 3.0 2.0 10 1.0 7.0 0.7 C cb 0.5 5.0 Q T 0.3 Q A 0.2 2.0 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 10 20 30 50 70 100 200 300 500 REVERSE VOLTAGE (VOLTS) I , COLLECTOR CURRENT (mA) C Figure 3. Capacitances Figure 4. Charge Data 100 100 I /I = 10 70 C B 70 V = 30 V CC I /I = 10 50 C B 50 t @ V = 30 V r CC t @ V = 10 V 30 30 r CC t @ V = 2 V d BE(off) t @ V = 0 20 d BE(off) 20 10 10 7.0 7.0 5.0 5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 5. Turn–On Time Figure 6. Rise Time 200 I /I = 10 C B 100 I /I = 20 C B 70 50 I = I B1 B2 t ′ = t - 1/8 t s s f 30 20 10 20 30 50 70 100 200 300 500 I , COLLECTOR CURRENT (mA) C Figure 7. Storage Time http://onsemi.com 3 t, TIME (ns) CAPACITANCE (pF) t ′, STORAGE TIME (ns) s Q, CHARGE (nC) t , RISE TIME (ns) r 2N4403 SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE V = –10 Vdc, T = 25°C; Bandwidth = 1.0 Hz CE A 10 10 f = 1 kHz 8 8 I = 1.0 mA, R = 430 Ω C S 6 6 I = 50 μA C I = 500 μA, R = 560 Ω C S 100 μA I = 50 μA, R = 2.7 k Ω C S 500 μA I = 100 μA, R = 1.6 k Ω 4 C S 4 1.0 mA 2 R = OPTIMUM SOURCE RESISTANCE 2 S 0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1�k 2�k 5�k 10�k 20�k 50�k f, FREQUENCY (kHz) R , SOURCE RESISTANCE (OHMS) S Figure 8. Frequency Effects Figure 9. Source Resistance Effects h PARAMETERS V = –10 Vdc, f = 1.0 kHz, T = 25°C CE A This group of graphs illustrates the relationship between selected from the 2N4403 lines, and the same units were h and other “h” parameters for this series of transistors. To used to develop the correspondingly–numbered curves on fe obtain these curves, a high–gain and a low–gain unit were each graph. 1000 100�k 2N4403 UNIT 1 700 50�k 2N4403 UNIT 2 500 20�k 300 10�k 5�k 200 2�k 2N4403 UNIT 1 2N4403 UNIT 2 100 1�k 70 500 50 200 30 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I , COLLECTOR CURRENT (mAdc) I , COLLECTOR CURRENT (mAdc) C C Figure 10. Current Gain Figure 11. Input Impedance 20 500 10 2N4403 UNIT 1 2N4403 UNIT 2 5.0 100 50 2.0 20 1.0 10 2N4403 UNIT 1 0.5 5.0 2N4403 UNIT 2 0.2 2.0 0.1 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I , COLLECTOR CURRENT (mAdc) I , COLLECTOR CURRENT (mAdc) C C Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance http://onsemi.com 4 -4 h , VOLTAGE FEEDBACK RATIO (X 10 ) h , CURRENT GAIN NF, NOISE FIGURE (dB) re fe h , OUTPUT ADMITTANCE ( mhos) � h , INPUT IMPEDANCE (OHMS) NF, NOISE FIGURE (dB) oe ie 2N4403 STATIC CHARACTERISTICS 3.0 V = 1.0 V CE T = 125 °C 2.0 V = 10 V J CE 25°C 1.0 -�55°C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 I , COLLECTOR CURRENT (mA) C Figure 14. DC Current Gain 1.0 0.8 0.6 I = 1.0 mA 10 mA 100 mA 500 mA C 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 I , BASE CURRENT (mA) B Figure 15. Collector Saturation Region 1.0 0.5 T = 25 °C J 0 0.8 V @ I /I = 10 � for V BE(sat) C B VC CE(sat) 0.5 0.6 V @ V = 10 V BE(sat) CE 1.0 0.4 1.5 0.2 2.0 � for V VS BE V @ I /I = 10 CE(sat) C B 0 2.5 50 100 200 50 100 200 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 16. “On” Voltages Figure 17. Temperature Coefficients http://onsemi.com 5 VOLTAGE (VOLTS) V , COLLECTOR-EMITTER VOLTAGE (VOLTS) h , NORMALIZED CURRENT GAIN CE FE COEFFICIENT (mV/ °C) 2N4403 PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI B Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND P BEYOND DIMENSION K MINIMUM. L SEATING INCHES MILLIMETERS K PLANE DIM MIN MAX MIN MAX A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 D G 0.045 0.055 1.15 1.39 XX H 0.095 0.105 2.42 2.66 G J 0.015 0.020 0.39 0.50 J H K 0.500 --- 12.70 --- L 0.250 --- 6.35 --- V C N 0.080 0.105 2.04 2.66 P --- 0.100 --- 2.54 SECTION X–X R 0.115 --- 2.93 --- 1 N V 0.135 --- 3.43 --- N TYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 6 2N4403 Notes http://onsemi.com 7 2N4403 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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