Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4123/D NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29–04, STYLE 1 Rating Symbol 2N4123 2N4124 Unit TO–92 (TO–226AA) Collector–Emitter Voltage V 30 25 Vdc CEO Collector–Base Voltage V 40 30 Vdc CBO Emitter–Base Voltage V 5.0 Vdc EBO Collector Current — Continuous I 200 mAdc C Total Device Dissipation @ T = 25°C P 625 mW A D Derate above 25°C 5.0 mW/°C Total Device Dissipation @ T = 25°C P 1.5 Watts C D Derate above 25°C 12 mW/°C Operating and Storage Junction T , T –55 to +150 °C J stg Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R 200 °C/WJA Thermal Resistance, Junction to Case R 83.3 °C/WJC ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS (1) Collector–Emitter Breakdown Voltage V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 2N4123 30 — C E 2N4124 25 — Collector–Base Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) 2N4123 40 — C E 2N4124 30 — Emitter–Base Breakdown Voltage V 5.0 — Vdc (BR)EBO (I = 10 Adc, I = 0) E C Collector Cutoff Current I — 50 nAdc CBO (V = 20 Vdc, I = 0) CB E Emitter Cutoff Current I — 50 nAdc EBO (V = 3.0 Vdc, I = 0) EB C 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data 1  Motorola, Inc. 1996 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued) A Characteristic Symbol Min Max Unit ON CHARACTERISTICS (1) DC Current Gain h — FE (I = 2.0 mAdc, V = 1.0 Vdc) 2N4123 50 150 C CE 2N4124 120 360 (I = 50 mAdc, V = 1.0 Vdc) 2N4123 25 — C CE 2N4124 60 — (1) Collector–Emitter Saturation Voltage V — 0.3 Vdc CE(sat) (I = 50 mAdc, I = 5.0 mAdc) C B (1) Base–Emitter Saturation Voltage V — 0.95 Vdc BE(sat) (I = 50 mAdc, I = 5.0 mAdc) C B SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product f MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 2N4123 250 — C CE 2N4124 300 — Input Capacitance C — 8.0 pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) EB C Collector–Base Capacitance C — 4.0 pF cb (I = 0, V = 5.0 V, f = 1.0 MHz) E CB Small–Signal Current Gain h — fe (I = 2.0 mAdc, V = 10 Vdc, R = 10 k ohm, f = 1.0 kHz) 2N4123 50 200 C CE S 2N4124 120 480 Current Gain — High Frequency |h | — fe (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 2N4123 2.5 — C CE 2N4124 3.0 — (I = 2.0 mAdc, V = 10 V, f = 1.0 kHz) 2N4123 50 200 C CE (I = 2.0 mAdc, V = 10 V, f = 1.0 kHz) 2N4124 120 480 C CE Noise Figure NF dB (I = 100 μAdc, V = 5.0 Vdc, R = 1.0 k ohm, 2N4123 — 6.0 C CE S f = 1.0 kHz) 2N4124 — 5.0 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. 10 200 7.0 100 t s 5.0 70 t d 50 C ibo 30 3.0 t f t r 20 C 2.0 obo V = 3 V CC 10.0 I /I = 10 C B V = 0.5 V 7.0 EB(off) 1.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE (VOLTS) I , COLLECTOR CURRENT (mA) C Figure 1. Capacitance Figure 2. Switching Times 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data CAPACITANCE (pF) TIME (ns) AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE (V = 5 Vdc, T = 25°C) CE A Bandwidth = 1.0 Hz 12 14 f = 1 kHz SOURCE RESISTANCE = 200 I = 1 mA C 12 I = 1 mA 10 C I = 0.5 mA 10 C SOURCE RESISTANCE = 200 8 I = 50 A C I = 0.5 mA C 8 6 I = 100 A SOURCE RESISTANCE = 1 kΩ C 6 I = 50 A C 4 4 2 SOURCE RESISTANCE = 500 2 I = 100 A C 0 0 0.1 0.2 0.4 1 2 4 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 f, FREQUENCY (kHz) R , SOURCE RESISTANCE (kΩ) S Figure 3. Frequency Variations Figure 4. Source Resistance h PARAMETERS (V = 10 V, f = 1 kHz, T = 25°C) CE A 300 100 50 200 20 10 100 70 5 50 2 30 1 0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 5. Current Gain Figure 6. Output Admittance 10 20 7.0 10 5.0 5.0 3.0 2.0 2.0 1.0 1.0 0.5 0.7 0.5 0.2 0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 7. Input Impedance Figure 8. Voltage Feedback Ratio Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 h , INPUT IMPEDANCE (kΩ) h , CURRENT GAIN NF, NOISE FIGURE (dB) ie fe –4 h , VOLTAGE FEEDBACK RATIO (X 10 ) h , OUTPUT ADMITTANCE ( mhos) NF, NOISE FIGURE (dB) re oe STATIC CHARACTERISTICS 2.0 T = +125°C J V = 1 V CE 1.0 +25°C 0.7 – 55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I , COLLECTOR CURRENT (mA) C Figure 9. DC Current Gain 1.0 T = 25°C J 0.8 I = 1 mA 10 mA 30 mA 100 mA C 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I , BASE CURRENT (mA) B Figure 10. Collector Saturation Region 1.2 1.0 T = 25°C J V @ I /I = 10 1.0 0.5 BE(sat) C B +25°C to +125°C for V VC CE(sat) 0.8 0 – 55°C to +25°C V @ V = 1 V BE CE – 0.5 0.6 – 55°C to +25°C 0.4 – 1.0 V @ I /I = 10 CE(sat) C B +25°C to +125°C 0.2 – 1.5 for V VB BE(sat) 0 – 2.0 1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 11. “On” Voltages Figure 12. Temperature Coefficients 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data V, VOLTAGE (VOLTS) V , COLLECTOR EMITTER VOLTAGE (VOLTS) h , DC CURRENT GAIN (NORMALIZED) CE FE θ , TEMPERATURE COEFFICIENTS (mV/°C) V PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. A B 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. R DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED P IN P AND BEYOND DIMENSION K MINIMUM. L F SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A 0.175 0.205 4.45 5.20 D B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.022 0.41 0.55 J X X F 0.016 0.019 0.41 0.48 G G 0.045 0.055 1.15 1.39 H H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 SECTION X–X V K 0.500 ––– 12.70 ––– C L 0.250 ––– 6.35 ––– N 0.080 0.105 2.04 2.66 1 N P ––– 0.100 ––– 2.54 R 0.115 ––– 2.93 ––– N V 0.135 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER CASE 029–04 2. BASE (TO–226AA) 3. COLLECTOR ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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