2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon Features http://onsemi.com • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish TO−92 CASE 29 MAXIMUM RATINGS 1 STYLE 1 2 Rating Symbol Value Unit 3 Collector−Emitter Voltage V 40 Vdc CEO Collector−Base Voltage V 60 Vdc CBO MARKING DIAGRAMS Emitter−Base Voltage V 6.0 Vdc EBO Collector Current − Continuous I 200 mAdc C 2N 2N Total Device Dissipation P D 3903 3904 625 mW @ T = 25°C A YWW YWW 5.0 mW/°C Derate above 25°C Total Device Dissipation P D 1.5 W @ T = 25°C C 12 mW/°C Y = Year Derate above 25°C WW = Work Week Operating and Storage Junction T , T −55 to °C J stg +150 Temperature Range ORDERING INFORMATION THERMAL CHARACTERISTICS (Note 1) † Device Package Shipping Characteristic Symbol Max Unit 2N3903 TO−92 5000 Units/Box Thermal Resistance, R 200 °C/W θJA Junction−to−Ambient 2N3903RLRM TO−92 2000/Ammo Pack Thermal Resistance, R 83.3 °C/W θJC 2N3904 TO−92 5000 Units/Box Junction−to−Case 2N3904RLRA TO−92 2000/Tape & Reel 1. Indicates Data in addition to JEDEC Requirements. 2N3904RLRE TO−92 2000/Tape & Reel COLLECTOR 2N3904RLRM 2N3904RLRM TO−92 2000/Ammo Pack 2000/Ammo Pack 3 2N3904RLRMG TO−92 2000/Ammo Pack 2 2N3904RLRP TO−92 2000/Ammo Pack BASE 2N3904RL1 TO−92 2000/Tape & Reel 1 2N3904ZL1 TO−92 2000/Ammo Pack EMITTER STYLE 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Refer- ence Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value.  Semiconductor Components Industries, LLC, 2003 1 Publication Order Number: December, 2003 − Rev. 4 2N3903/D 2N3903, 2N3904 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 2) (I = 1.0 mAdc, I = 0) V 40 − Vdc C B (BR)CEO Collector−Base Breakdown Voltage (I = 10 �Adc, I = 0) V 60 − Vdc C E (BR)CBO Emitter−Base Breakdown Voltage (I = 10 �Adc, I = 0) V 6.0 − Vdc E C (BR)EBO Base Cutoff Current (V = 30 Vdc, V = 3.0 Vdc) I − 50 nAdc CE EB BL Collector Cutoff Current (V = 30 Vdc, V = 3.0 Vdc) I − 50 nAdc CE EB CEX ON CHARACTERISTICS DC Current Gain (Note 2) h − FE (I = 0.1 mAdc, V = 1.0 Vdc) 2N3903 20 − C CE 2N3904 40 − (I = 1.0 mAdc, V = 1.0 Vdc) 2N3903 35 − C CE 2N3904 70 − (I = 10 mAdc, V = 1.0 Vdc) 2N3903 50 150 C CE 2N3904 100 300 (I = 50 mAdc, V = 1.0 Vdc) 2N3903 30 − C CE 2N3904 60 − (I = 100 mAdc, V = 1.0 Vdc) 2N3903 15 − C CE 2N3904 30 − Collector−Emitter Saturation Voltage (Note 2) V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) − 0.2 C B (I = 50 mAdc, I = 5.0 mAdc − 0.3 C B Base−Emitter Saturation Voltage (Note 2) V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) − 0.95 C B SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product f MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 2N3903 250 − C CE 2N3904 300 − Output Capacitance (V = 5.0 Vdc, I = 0, f = 1.0 MHz) C − 4.0 pF CB E obo Input Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz) C − 8.0 pF EB C ibo Input Impedance h k Ω ie (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 2N3903 1.0 8.0 C CE 2N3904 1.0 10 −4 Voltage Feedback Ratio h X 10 re (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 2N3903 0.1 5.0 C CE 2N3904 0.5 8.0 Small−Signal Current Gain h − fe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 2N3903 50 200 C CE 2N3904 100 400 Output Admittance (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 1.0 40 �mhos C CE oe Noise Figure NF dB (I = 100 �Adc, V = 5.0 Vdc, R = 1.0 k Ω, f = 1.0 kHz) 2N3903 − 6.0 C CE S 2N3904 − 5.0 SWITCHING CHARACTERISTICS Delay Time t − 35 ns d (V (V = 3.0 Vdc, V 3.0 Vdc, V = 0 0.5 Vdc, .5 Vdc, CC CC BE BE I = 10 mAdc, I = 1.0 mAdc) C B1 Rise Time t − 35 ns r (V = 3.0 Vdc, I = 10 mAdc, 2N3903 Storage Time t − 175 ns CC C s I = I = 1.0 mAdc) 2N3904 − 200 B1 B2 Fall Time t − 50 ns f 2. Pulse Test: Pulse Width � 300 �s; Duty Cycle � 2%. http://onsemi.com 2 2N3903, 2N3904 +3 V +3 V DUTY CYCLE = 2% t 10 < t < 500 �s 1 1 +10.9 V 300 ns DUTY CYCLE = 2% +10.9 V 275 275 10 k 10 k 0 -�0.5 V C < 4 pF* C < 4 pF* < 1 ns S S 1N916 -�9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit http://onsemi.com 3 2N3903, 2N3904 TYPICAL TRANSIENT CHARACTERISTICS T = 25°C J T = 125°C J 10 5000 V = 40 V CC 3000 7.0 I /I = 10 C B 2000 5.0 1000 700 C ibo 500 3.0 Q T 300 C obo 200 2.0 Q A 100 70 1.0 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE (VOLTS) I , COLLECTOR CURRENT (mA) C Figure 3. Capacitance Figure 4. Charge Data 500 500 I /I = 10 V = 40 V C B CC 300 300 I /I = 10 C B 200 200 100 100 70 t @ V = 3.0 V 70 r CC 50 50 30 30 40 V 20 20 15 V 10 10 2.0 V 7 t @ V = 0 V 7 d OB 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 5. Turn−On Time Figure 6. Rise Time 500 500 1 t′ = t - / t s s 8 f V = 40 V CC 300 300 I = I B1 B2 I = I I /I = 20 I /I = 10 C B C B B1 B2 200 200 I /I = 20 C B 100 100 70 70 I /I = 20 C B 50 50 I /I = 10 C B I /I = 10 30 30 C B 20 20 10 10 7 7 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 7. Storage Time Figure 8. Fall Time http://onsemi.com 4 t , STORAGE TIME (ns) TIME (ns) ′ CAPACITANCE (pF) s Q, CHARGE (pC) t , FALL TIME (ns) t , RISE TIME (ns) f r 2N3903, 2N3904 TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V = 5.0 Vdc, T = 25°C, Bandwidth = 1.0 Hz) CE A 12 14 SOURCE RESISTANCE = 200 � f = 1.0 kHz I = 1.0 mA C I = 1.0 mA 12 C 10 I = 0.5 mA C 10 SOURCE RESISTANCE = 200 � 8 I = 50 �A C I = 0.5 mA C 8 6 SOURCE RESISTANCE = 1.0 k I = 100 �A C 6 I = 50 �A C 4 4 2 SOURCE RESISTANCE = 500 � 2 I = 100 �A C 0 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 f, FREQUENCY (kHz) R , SOURCE RESISTANCE (k OHMS) S Figure 9. Figure 10. h PARAMETERS (V = 10 Vdc, f = 1.0 kHz, T = 25°C) CE A 300 100 50 200 20 10 100 70 5 50 2 30 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 11. Current Gain Figure 12. Output Admittance 20 10 7.0 10 5.0 5.0 3.0 2.0 2.0 1.0 1.0 0.5 0.7 0.2 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio http://onsemi.com 5 h , INPUT IMPEDANCE (k OHMS) h , CURRENT GAIN NF, NOISE FIGURE (dB) ie fe -4 h , VOLTAGE FEEDBACK RATIO (X 10 ) h , OUTPUT ADMITTANCE ( mhos) � NF, NOISE FIGURE (dB) re oe 2N3903, 2N3904 TYPICAL STATIC CHARACTERISTICS 2.0 T = +125°C J V = 1.0 V CE +25°C 1.0 0.7 -�55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I , COLLECTOR CURRENT (mA) C Figure 15. DC Current Gain 1.0 T = 25°C J 0.8 I = 1.0 mA 10 mA 30 mA 100 mA C 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I , BASE CURRENT (mA) B Figure 16. Collector Saturation Region 1.2 1.0 T = 25°C J V @ I /I =10 BE(sat) C B +25°C TO +125°C 1.0 0.5 � FOR V VC CE(sat) 0.8 0 -�55°C TO +25°C V @ V =1.0 V BE CE 0.6 -�0.5 -�55°C TO +25°C 0.4 -�1.0 V @ I /I =10 CE(sat) C B +25°C TO +125°C � FOR V VB BE(sat) 0.2 -�1.5 0 -�2.0 1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 17. “ON” Voltages Figure 18. Temperature Coefficients http://onsemi.com 6 V, VOLTAGE (VOLTS) V , COLLECTOR EMITTER VOLTAGE (VOLTS) h , DC CURRENT GAIN (NORMALIZED) CE FE COEFFICIENT (mV/ C) ° 2N3903, 2N3904 PACKAGE DIMENSIONS TO−92 TO−226AA CASE 29−11 ISSUE AL NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI B Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND P BEYOND DIMENSION K MINIMUM. L SEATING INCHES MILLIMETERS K PLANE DIM MIN MAX MIN MAX A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 D G 0.045 0.055 1.15 1.39 XX H 0.095 0.105 2.42 2.66 G J 0.015 0.020 0.39 0.50 J H K 0.500 --- 12.70 --- L 0.250 --- 6.35 --- V C N 0.080 0.105 2.04 2.66 P --- 0.100 --- 2.54 SECTION X−X R 0.115 --- 2.93 --- 1 N V 0.135 --- 3.43 --- N STYLE 1: STYLE 14: PIN 1. EMITTER PIN 1. EMITTER 2. BASE 2. COLLECTOR 3. COLLECTOR 3. BASE http://onsemi.com 7 2N3903, 2N3904 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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