ON Semiconductor� NPN * Complementary Silicon Power 2N3773 PNP Transistors 2N6609 The 2N3773 and 2N6609 are PowerBase� power transistors designed for high power audio, disk head positioners and other linear *ON Semiconductor Preferred Device applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or 16 AMPERE COMPLEMENTARY inverters. POWER TRANSISTORS • High Safe Operating Area (100% Tested) 150 W @ 100 V 140 VOLTS • Completely Characterized for Linear Operation 150 WATTS • High DC Current Gain and Low Saturation Voltage h = 15 (Min) @ 8 A, 4 V FE V = 1.4 V (Max) @ I = 8 A, I = 0.8 A CE(sat) C B • For Low Distortion Complementary Designs CASE 1–07 TO–204AA (TO–3) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating Symbol Value Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Emitter Voltage V 140 Vdc CEO ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage V 160 Vdc CEX ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage V 160 Vdc CBO ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage V 7 Vdc EBO ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous I 16 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ — Peak (1) 30 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current — Continuous I 4 Adc B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ — Peak (1) 15 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ T = 25�C P 150 Watts C D ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25�C 0.855 W/�C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction T , T –65 to +200 �C J stg Temperature Range ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Max Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case R 1.17 �C/W θJC ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle � 10%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: March, 2001 – Rev. 9 2N3773/D 2N3773 2N6609 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (T = 25�C unless otherwise noted) C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS (2) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Collector–Emitter Breakdown Voltage V 140 — Vdc CEO(sus) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I = 0.2 Adc, I = 0) C B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Collector–Emitter Sustaining Voltage V 160 — Vdc CEX(sus) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I = 0.1 Adc, V = 1.5 Vdc, R = 100 Ohms)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ C BE(off) BE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Sustaining Voltage V 150 — Vdc CER(sus) (I = 0.2 Adc, R = 100 Ohms) C BE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ *Collector Cutoff Current I — 10 mAdc CEO ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (V = 120 Vdc, I = 0) CE B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Collector Cutoff Current I mAdc CEX ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (V = 140 Vdc, V = 1.5 Vdc) CE BE(off) — 2 (V = 140 Vdc, V = 1.5 Vdc, T = 150�C) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CE BE(off) CÎÎÎÎÎÎÎÎ —ÎÎÎÎ 10ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current I — 2 mAdc CBO (V = 140 Vdc, I = 0) CB E ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Emitter Cutoff Current I — 5 mAdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ EBOÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (V = 7 Vdc, I = 0) BE C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS (2) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain h — FE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *(I = 8 Adc, V = 4 Vdc) C CE 15 60 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î (I = 16 Adc, V = 4 Vdc)ÎÎÎÎ C CE 5 — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Saturation Voltage V Vdc CE(sat) *(I = 8 Adc, I = 800 mAdc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ C BÎÎÎÎÎÎÎÎ —ÎÎÎÎ 1.4ÎÎÎÎ (I = 16 Adc, I = 3.2 Adc) C B — 4 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Base–Emitter On Voltage V — 2.2 Vdc BE(on) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I = 8 Adc, V = 4 Vdc) C CE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Magnitude of Common–Emitter |h | 4 — — fe ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Small–Signal, Short–Circuit, Forward Current Transfer Ratio (I = 1 A, f = 50 kHz) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Small–Signal Current GainÎÎÎÎÎÎÎÎÎÎ hÎÎÎÎÎÎ 40ÎÎÎÎÎÎÎÎ —ÎÎÎÎÎÎ — fe (I = 1 Adc, V = 4 Vdc, f = 1 kHz) C CE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ SECOND BREAKDOWN CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Second Breakdown Collector Current with Base Forward Biased I 1.5 — Adc S/b ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ t = 1 s (non–repetitive), V = 100 V, See Figure 12 CE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (2) Pulse Test: Pulse Width = 300 μs, Duty Cycle � 2%. *Indicates JEDEC Registered Data. http://onsemi.com 2 2N3773 2N6609 NPN PNP 300 300 150°C 200 200 150°C 25°C 100 100 -�55°C -�55°C 25°C 70 70 50 50 V = 4 V 30 CE 30 V = 4 V CE 20 20 10 10 7.0 7.0 5.0 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 I , COLLECTOR CURRENT (AMPS) I , COLLECTOR CURRENT (AMPS) C C Figure 6. DC Current Gain Figure 7. DC Current Gain 2.0 2.0 I = 4 A I = 4 A C C 1.6 1.6 I = 16 A C 1.2 1.2 I = 8 A C I = 8 A C I = 16 A C 0.8 0.8 0.4 0.4 T = 25 °C T = 25 °C C C 0 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 I , BASE CURRENT (AMPS) I , BASE CURRENT (AMPS) B B Figure 8. Collector Saturation Region Figure 9. Collector Saturation Region 2.0 2.0 I /I = 10 I /I = 10 C B C B 1.6 1.6 1.2 1.2 V BE(sat) V BE(sat) 0.8 0.8 25°C 25°C 150°C 150°C 150°C 150°C 0.4 0.4 25°C V CE(sat) 25°C V CE(sat) 0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 I , COLLECTOR CURRENT (AMPS) I , COLLECTOR CURRENT (AMPS) C C Figure 10. “On” Voltage Figure 11. “On” Voltage http://onsemi.com 3 h , DC CURRENT GAIN V, VOLTAGE (VOLTS) V , COLLECTOR-EMITTER VOLTAGE (VOLTS) FE CE V, VOLTAGE (VOLTS) V , COLLECTOR-EMITTER VOLTAGE (VOLTS) h , DC CURRENT GAIN CE FE 2N3773 2N6609 30 20 10 μs 40 μs 10 100 μs 5.0 200 μs dc 3.0 1.0 ms 2.0 100 ms 1.0 0.5 500 ms BONDING WIRE LIMIT 0.3 0.2 THERMAL LIMIT @ T = 25 °C, SINGLE PULSE C 0.1 SECOND BREAKDOWN LIMIT 0.05 0.03 3.0 5.0 7.0 10 20 30 50 70 100 200 300 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 12. Forward Bias Safe Operating Area There are two limitations on the power handling ability of limits are valid for duty cycles to 10% provided T J(pk) a transistor: average junction temperature and second < 200�C. At high case temperatures, thermal limitations breakdown. Safe operating area curves indicate I – V will reduce the power that can be handled to values less than C CE limits of the transistor that must be observed for reliable the limitations imposed by second breakdown. operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on T = 200�C; T is J(pk) C variable depending on conditions. Second breakdown pulse 100 80 60 THERMAL 40 DERATING 20 0 0 40 80 120 160 200 T , CASE TEMPERATURE ( °C) C Figure 13. Power Derating http://onsemi.com 4 I , COLLECTOR CURRENT (AMP) C POWER DERATING FACTOR (%) 2N3773 2N6609 PACKAGE DIMENSIONS CASE 1–07 TO–204AA (TO–3) ISSUE Z A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI C Y14.5M, 1982. SEATING 2. CONTROLLING DIMENSION: INCH. –T– PLANE 3. ALL RULES AND NOTES ASSOCIATED WITH E REFERENCED TO-204AA OUTLINE SHALL APPLY. K D 2 PL INCHES MILLIMETERS M M M 0.13 (0.005) T Q Y DIM MIN MAX MIN MAX A 1.550 REF 39.37 REF U B --- 1.050 --- 26.67 –Y– L V C 0.250 0.335 6.35 8.51 D 0.038 0.043 0.97 1.09 2 E 0.055 0.070 1.40 1.77 G 0.430 BSC 10.92 BSC G B H H 0.215 BSC 5.46 BSC 1 K 0.440 0.480 11.18 12.19 L 0.665 BSC 16.89 BSC N --- 0.830 --- 21.08 –Q– Q 0.151 0.165 3.84 4.19 M M 0.13 (0.005) T Y U 1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 5 2N3773 2N6609 Notes http://onsemi.com 6 2N3773 2N6609 Notes http://onsemi.com 7 2N3773 2N6609 PowerBase is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). 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