MITSUBISHI TRANSISTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TF-HB • IC Collector current .......................... 30A • VCEX Collector-emitter voltage ........... 600V • hFE DC current gain............................. 750 • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 107 81 20 21.5 21.5 17.5 Fig. 1 Fig. 2 2–φ5.5 BuP EuP BvP EvP BwP EwP 3.8 8 P 6.35 2.8 φ1.2 φ1.65 UV W N BuN EuN BvN EvN BwN EwN 7.5 7.5 14 7.5 16 14 93 P BvP BwP BuP Tab#110, t=0.5(Fig. 2) Tab#250, t=0.8(Fig. 1) EuP EvP EwP U V W BvN BwN LABEL BuN EuN EvN EwN N Note: All Transistor Units are 3-Stage Darlingtons. Feb.1999 http://store.iiic.cc/ 45 28.2 21 7.5 18 17.5 30 3.4 7.95 1 5.5 1 7.1 MITSUBISHI TRANSISTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted) Symbol Parameter Conditions Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 30 A –IC 30 A Collector reverse current DC (forward diode current) PC Collector dissipation TC=25°C 250 W IB Base current DC 1.8 A Surge collector reverse current –ICSM Peak value of one cycle of 60Hz (half wave) 300 A (forward diode current) Tj Junction temperature –40~+150 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Charged part to case, AC for 1 minute 2500 V 1.47~1.96 N·m — Mounting torque Mounting screw M5 15~20 kg·cm — Weight Typical value 230 g ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted) Limits Symbol Parameter Test conditions Unit Min. Typ. Max. — — 1.0 ICEX Collector cutoff current VCE=600V, VEB=2V mA ICBO Collector cutoff current VCB=600V, Emitter open — — 1.0 mA IEBO Emitter cutoff current VEB=7V — — 60 mA — — 2.5 VCE (sat) Collector-emitter saturation voltage V IC=30A, IB=40mA VBE (sat) Base-emitter saturation voltage — — 3.0 V –VCEO Collector-emitter reverse voltage –IC=30A (diode forward voltage) — — 1.8 V 750 — — hFE DC current gain IC=30A, VCE=2.5V — — — 2.0 ton μs ts Switching time VCC=300V, IC=30A, IB1=60mA, IB2=–0.6A — — 8.0 μs tf — — 3.0 μs — — 0.5 Rth (j-c) Q Transistor part (per 1/6 module) °C/W Thermal resistance (junction to case) Rth (j-c) R Diode part (per 1/6 module) — — 2.0 °C/W Contact thermal resistance — — 0.35 Rth (c-f) Conductive grease applied (per 1/6 module) °C/W (case to fin) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT DC CURRENT GAIN VS. CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT (TYPICAL) 4 100 10 Tj=25°C 7 Tj=25°C 5 Tj=125°C 3 80 2 3 10 VCE=5.0V 7 60 5 3 2 40 VCE=2.5V 2 10 7 5 20 3 2 1 0 10 0 1 2 3 0 1 2 345 10 2 344 5 710 2 3 5 7 10 2 345 7 10 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COMMON EMITTER INPUT SATURATION VOLTAGE CHARACTERISTIC (TYPICAL) CHARACTERISTICS (TYPICAL) 1 0 10 10 7 VCE=2.5V 7 Tj=25°C 5 5 4 4 3 3 VBE(sat) 2 2 –1 0 10 10 VCE(sat) 7 7 5 5 4 4 IB=40mA 3 3 2 2 Tj=25°C Tj=125°C –2 –1 10 10 0 1 2 2.2 2.6 3.0 3.4 3.8 4.2 10 23 45 7 10 23 45 7 10 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION SWITCHING TIME VS. COLLECTOR VOLTAGE (TYPICAL) CURRENT (TYPICAL) 1 10 5 Tj=25°C 7 Tj=125°C 5 4 4 3 2 3 tf 0 ts 10 IC=30A 7 2 IC=20A 5 VCC=300V 4 IB1=60mA IC=10A 3 IB2=–0.6A 1 2 ton Tj=25°C Tj=125°C 0 –1 10 0 1 2 –3 –2 –1 0 10 2 344 5 710 2 3 5 710 2 345 7 10 10 23 45 7 10 23 45 7 10 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 http://store.iiic.cc/ IB=10mA IB=20mA IB=200mA IB=0.5A IB=100mA COLLECTOR-EMITTER SATURATION BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) VOLTAGE VCE (sat) (V) SWITCHING TIME ton, ts, tf (μs) SATURATION VOLTAGE VCE (sat), VBE (sat) (V) DC CURRENT GAIN hFE 500µS 100µS 1mS DC MITSUBISHI TRANSISTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE REVERSE BIAS SAFE OPERATING AREA CURRENT (TYPICAL) 1 10 80 Tj=125°C 7 70 ts 5 4 IB2=–0.6A 60 tf 3 2 50 0 40 10 IB2=–3.0A 7 30 VCC=300V 5 4 IB1=60mA 20 3 IC=30A 2 Tj=25°C 10 Tj=125°C –1 10 0 –1 0 1 10 23 45 7 10 23 45 7 10 0 100 200 300 400 500 600 700 800 BASE REVERSE CURRENT –IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A. 2 10 100 7 SECOND 5 90 BREAKDOWN AREA 3 80 2 70 1 10 7 60 5 50 COLLECTOR 3 DISSIPATION 2 40 0 10 30 7 5 20 3 TC=25°C 2 10 NON–REPETITIVE –1 10 0 0 1 2 3 10 2 344 5 7 10 2 3 5 7 10 2 34 5 7 10 0 20 40 60 80 100 120 140 160 COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (°C) REVERSE COLLECTOR CURRENT VS. TRANSIENT THERMAL IMPEDANCE COLLECTOR-EMITTER REVERSE CHARACTERISTIC (TRANSISTOR) VOLTAGE (DIODE FORWARD 0 1 2 CHARACTERISTICS) (TYPICAL) 10 2345710 2 3457 10 2 10 0.5 7 5 0.4 4 3 2 0.3 1 10 7 0.2 5 4 3 0.1 2 Tj=25°C Tj=125°C 0 0 10 –3 –2 –1 0 10 2 344 5 710 2 3 5 710 2 34 5 7 10 0.4 0.8 1.2 1.6 2.0 2.4 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) Feb.1999 http://store.iiic.cc/ Zth (j–c) (°C/ W) COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (μs) COLLECTOR REVERSE CURRENT –IC (A) DERATING FACTOR (%) COLLECTOR CURRENT IC (A) MITSUBISHI TRANSISTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT REVERSE RECOVERY CHARACTERISTICS (DIODE FORWARD SURGE CURRENT) OF FREE-WHEEL DIODE (TYPICAL) 2 2 10 10 500 7 VCC=300V 5 IB1=60mA 3 IB2=–0.6A 400 2 1 1 10 Irr 10 7 300 5 3 2 200 Qrr 0 0 10 10 7 5 100 3 trr Tj=25°C 2 Tj=125°C –1 –1 10 10 0 0 1 2 0 1 2 3 2 3 4 5 7 10 2 3 4 5 7 10 10 10 2 344 5 710 2 3 5 7 10 2 345 7 10 CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 0 1 10 2345710 2 3 2.0 1.6 1.2 0.8 0.4 0 –3 –2 –1 0 10 2 344 5 710 2 3 5 710 2 34 5 7 10 TIME (s) Feb.1999 http://store.iiic.cc/ Zth (j–c) (°C/ W) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) Irr (A), Qrr (μc) trr (μs)