MITSUBISHI INTELLIGENT POWER MODULES PM10RSH120 FLAT-BASE TYPE INSULATED PACKAGE A X B C 1. VUPC 14. VNI D 2. U FO 15. BR Q P 3.UU PN 16. S P P T 4. VUPI 17.VN 5. VVPC 18.WN 12 34 5 6 7 8 9 11 13 15 17 19 6. VFO 19. FO 7.VP 20. P 10 12 14 16 18 8. VVPI 21. B Y (15 TYP.) F H G 9. V WPC 22. N U (4 TYP.) 10. WFO 23. U PB N U V W 11.WP 24. V 12. VWPI 25. W 13. VNC Z NM MMMM V - DIA. Description: E (4 TYP.) Mitsubishi Intelligent Power Mod- 2.0 ± 0.1 X 0.5 ± 0.1 MM PIN ules are isolated base modules de- (6 TYP.) signed for power switching applica- 0.6 ± 0.1 X 0.4 ± 0.1 MM PIN J tions operating at frequencies to (19 TYP.) AA K 20kHz. Built-in control circuits pro- W L vide optimum gate drive and pro- R tection for the IGBT and free-wheel diode power devices. Features: u Complete Output Power Circuit TEMP u Gate Drive Circuit u Protection Logic – Short Circuit – Over Current – Over Temperature B N W V U P – Under Voltage Applications: Outline Drawing and Circuit Diagram u Inverters u UPS Dimensions Inches Millimeters Dimensions Inches Millimeters u Motion/Servo Control A 3.98±0.04 101.0±1.0 N 0.41 10.5 u Power Supplies B 3.78 96.0 P 0.400 10.16 C 3.48±0.03 88.5±0.8 Q 0.392 9.96 Ordering Information: D 2.700±0.03 68.58±0.8 R 0.31 8.0 Example: Select the complete part number from the table below E 2.66±0.02 67.5±0.5 S 0.26 6.5 -i.e. PM10RSH120 is a 1200V, F 2.36±0.04 60.0±1.0 T 0.246 6.25 10 Ampere Intelligent Power Mod- G 1.85±0.02 47.0±0.5 U 0.18 Rad. Rad. 4.5 ule. H 1.83±0.03 46.5±0.8 V 0.18 Dia. Dia. 4.5 Type Current Rating V CES J 1.28 32.6 W 0.17±0.02 4.4±0.5 Amperes Volts (x 10) K 0.97 24.6 X 0.10 2.5 PM 10 120 L 0.71±0.04 18.0±1.0 Y 0.100±0.01 2.54±0.25 M 0.53±0.01 13.5±0.3 Z 0.02 0.5 AA 0.14 3.5 Sep.1998 http://store.iiic.cc/ GND GND FO IN B R S I F O OUT V CC GND GND V NC IN W N S I F O OUT V CC V NI GND GND IN V N S I F O OUT V CC GND GND IN UN S I F O OUT V CC GND GND V WPC IN WP S I F O W FO OUT V CC V WPI GND GND V VPC IN VP S I F O V FO OUT V CC V VPI GND GND V UPC IN UP S I F O U FO OUT V CC V UPI MITSUBISHI INTELLIGENT POWER MODULES PM10RSH120 FLAT-BASE TYPE INSULATED PACKAGE Absolute Maximum Ratings, T = 25°C unless otherwise specified j Ratings Symbol PM10RSH120 Units Power Device Junction Temperature T -20 to 150 °C j Storage Temperature T -40 to 125 °C stg Case Operating Temperature T -20 to 100 °C C Mounting Torque, M4 Mounting Screws — 0.98 ~ 1.47 N · m Module Weight (Typical) — 100 Grams Supply Voltage Protected by OC and SC (V = 13.5 - 16.5V, Inverter Part, T = 125°C) V 800 Volts D j CC(prot.) Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V 2500 Vrms iso Control Sector Supply Voltage (Applied between V -V , V -V , V -V , V -V)V 20 Volts UP1 UPC VP1 VPC WP1 WPC N1 NC D Input Voltage (Applied between U -V , V -V , W -V , U · V · W · B -V )V 20 Volts P UPC P VPC P WPC N N N r NC CIN Fault Output Supply Voltage Applied between (U -V , V -V , W -V , F -V )V 20 Volts FO UPC FO VPC FO WPC O NC FO Fault Output Current (Sink Current at U , V , W and F Terminal) I 20 mA FO FO FO O FO IGBT Inverter Sector Collector-Emitter Voltage (V = 15V, V = 15V) V 1200 Volts D CIN CES Collector Current, (T = 25°C) I 10 Amperes C C Peak Collector Current, (T = 25°C) I 20 Amperes C CP Supply Voltage (Applied between P - N) V 900 Volts CC Supply Voltage, Surge (Applied between P - N) V 1000 Volts CC(surge) Collector Dissipation P 62 Watts C Brake Sector Collector-Emitter Voltage (V = 15V, V = 15V) V 1200 Volts D CIN CES Collector Current, (T = 25°C) I 10 Amperes C C Peak Collector Current, (T = 25°C) I 20 Amperes C CP Supply Voltage (Applied between P - N) V 900 Volts CC Supply Voltage, Surge (Applied between P - N) V 1000 Volts CC(surge) Collector Dissipation P 41 Watts C Diode Forward Current I 10 Amperes F Diode DC Reverse Voltage V 1200 Volts R(DC) Sep.1998 http://store.iiic.cc/ MITSUBISHI INTELLIGENT POWER MODULES PM10RSH120 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, T = 25°C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Control Sector Over Current Trip Level Inverter Part OC -20°C ≤ T ≤ 125°C, V = 15V 15 27 — Amperes D Over Current Trip Level Brake Part 15 27 — Amperes Short Circuit Trip Level Inverter Part SC -20°C ≤ T ≤ 125°C, V = 15V — 41 — Amperes D Short Circuit Trip Level Brake Part — 41 — Amperes Over Current Delay Time t V = 15V — 10 — μs off(OC) D Over Temperature Protection OT Trip Level 100 110 125 °C OT Reset Level — 90 — °C r Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts UV Reset Level — 12.5 — Volts r Supply Voltage V Applied between V -V , 13.5 15 16.5 Volts D UP1 UPC V -V , V -V , V -V VP1 VPC WP1 WPC N1 NC Circuit Current I V = 15V, V = 15V, V -V —25 35 mA D D CIN N1 NC V = 15V, V = 15V, V -V — 7 10 mA D CIN XP1 XPC Input ON Threshold Voltage V Applied between 1.2 1.5 1.8 Volts th(on) Input OFF Threshold Voltage V U -V , V -V , W -V , 1.7 2.0 2.3 Volts th(off) P UPC P VPC P WPC U · V · W · B -V N N N r NC PWM Input Frequency f 3-φ Sinusoidal — 15 20 kHz PWM Fault Output Current I V = 15V, V = 15V — — 0.01 mA FO(H) D FO I V = 15V, V = 15V — 10 15 mA FO(L) D FO Minimum Fault Output Pulse Width t V = 15V 1.0 1.8 — ms FO D Sep.1998 http://store.iiic.cc/ MITSUBISHI INTELLIGENT POWER MODULES PM10RSH120 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, T = 25°C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units IGBT Inverter Sector Collector Cutoff Current I V = V , T = 25°C — — 1.0 mA CES CE CES j V = V , T = 125°C— — 10 mA CE CES j Emitter-Collector Voltage V -I = 10A, V = 15V, V = 5V — 2.5 3.5 Volts EC C D CIN Collector-Emitter Saturation Voltage V V = 15V, V = 0V, I = 10A — 2.3 3.3 Volts CE(sat) D CIN C V = 15V, V = 0V, I = 10A, — 2.1 3.1 Volts D CIN C T = 125°C j Inductive Load Switching Times t 0.4 0.7 1.5 μs on t V = 15V, V = 0V ↔ 15V — 0.15 0.3 μs rr D CIN t V = 600V, I = 10A — 0.3 1.0 μs C(on) CC C t T = 125°C — 1.7 2.9 μs off j t — 0.6 1.2 μs C(off) Brake Sector Collector-Emitter Saturation Voltage V V = 15V, V = 0V, I = 10A, — 2.8 3.8 Volts CE(sat) D CIN C T = 25°C j V = 15V, V = 0V, I = 10A, — 2.5 3.5 Volts D CIN C T = 125°C j Diode Forward Voltage V I = 10A, V = 15V, V = 5V — 2.5 3.5 Volts FM F D CIN Collector Cutoff Current I V = V , T = 25°C— — 1 mA CES CE CES j V = V , T = 125°C— — 10 mA CE CES j Sep.1998 http://store.iiic.cc/ MITSUBISHI INTELLIGENT POWER MODULES PM10RSH120 FLAT-BASE TYPE INSULATED PACKAGE Thermal Characteristics Characteristic Symbol Condition Min. Typ. Max. Units Junction to Case Thermal Resistance R Each Inverter IGBT — — 2.0 °C/Watt th(j-c)Q R Each Inverter FWDi — — 5.5 °C/Watt th(j-c)F R Each Brake IGBT — — 3.0 °C/Watt th(c-f)Q R Each Brake FWDi — — 5.5 °C/Watt th(c-f)F Contact Thermal Resistance R Case to Fin Per Module, — — 0.044 °C/Watt th(c-f) Thermal Grease Applied Recommended Conditions for Use Characteristic Symbol Condition Value Units Supply Voltage V Applied across P-N Terminals 0 ~ 800 Volts CC V Applied between V -V , 15 ± 1.5 Volts D UP1 UPC V -V , V -V , V -V N1 NC VP1 VPC WP1 WPC Input ON Voltage V Applied between 0 ~ 0.8 Volts CIN(on) Input OFF Voltage V U , V , W , U , V , W , B 4.0 ~ V Volts CIN(off) P P P N N N r D PWM Input Frequency f Using Application Circuit 5 ~ 20 kHz PWM Minimum Dead Time t Input Signal ≥ 2.5 μs dead Sep.1998 http://store.iiic.cc/ MITSUBISHI INTELLIGENT POWER MODULES PM10RSH120 FLAT-BASE TYPE INSULATED PACKAGE Inverter Part SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION OUTPUT CHARACTERISTICS CHARACTERISTICS (TYPICAL) VOLTAGE CHARACTERISTICS (TYPICAL) (TYPICAL) 3.0 3.0 15.0 o T = 25 C j 15 V = 0V CIN 2.5 2.5 V = 17V D 13 2.0 10.0 2.0 1.5 1.5 I = 50A 1.0 C 1.0 5.0 V = 0V V = 15V CIN D o T T = 25 C V = 0V j CIN o 0.5 o 0.5 T = 125 C T = 25 C j j o T = 125 C j 0 0 0 05 10 15 20 012 14 16 18 20 0 1.0 2.0 3.0 4.0 COLLECTOR CURRENT, I , (AMPERES) SUPPLY VOLTAGE, V , (VOLTS) COLLECTOR-EMITTER VOLTAGE, V , (VOLTS) C D CE SWITCHING TIME VS. SWITCHING TIME VS. REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT (TYPICAL) 1 0 3 2 10 10 10 10 V = 600V V = 600V CC CC V = 600V CC V = 15V V = 15V D D V = 15V D Inductive Load Inductive Load Inductive Load o o T = 25 C o T = 25 C j j T = 25 C o j o T = 125 C o T = 125 C j T = 125 C j j t t off rr 0 -1 2 1 10 10 10 10 t on t c(off) I rr t c(on) -1 -2 1 0 10 10 10 10 0 1 2 0 1 2 0 1 2 10 10 10 10 10 10 10 10 10 COLLECTOR CURRENT, I , (AMPERES) COLLECTOR CURRENT, I , (AMPERES) COLLECTOR CURRENT, I , (AMPERES) C C C OVER CURRENT TRIP LEVEL VS. OVER CURRENT TRIP LEVEL VS. DIODE FORWARD CHARACTERISTICS SUPPLY VOLTAGE (TYPICAL) TEMPERATURE (TYPICAL) 140 120 2 10 o V = 15V T = 25 C D j V = 15V CIN o T = 25 C j 120 110 o T = 125 C j 100 100 1 10 80 90 60 80 V = 15V D 0 10 00 -20 0 20 60 100 140 0 0.5 1.0 1.5 2.0 2.5 3.0 012 14 16 18 20 o SUPPLY VOLTAGE, V , (VOLTS) JUNCTION TEMPERATURE, T , ( C) EMITTER-COLLECTOR VOLTAGE, V , (VOLTS) EC D j Sep.1998 http://store.iiic.cc/ SWITCHING TIMES, t , t , (μs) on off SATURATION VOLTAGE V , (VOLTS) COLLECTOR REVERSE CURRENT, -I , (AMPERES) CE(sat) C COLLECTOR-EMITTER SATURATION VOLTAGE OVER CURRENT TRIP LEVEL % (NORMALIZED) SWITCHING TIMES, t , t , (μs) V , (VOLTS) c(on) c(off) CE(sat) REVERSE RECOVERY TIME, t , (μs) COLLECTOR CURRENT, I , (AMPERES) OVER CURRENT TRIP LEVEL % (NORMALIZED) C rr REVERSE RECOVERY CURRENT, I , (AMPERES) rr MITSUBISHI INTELLIGENT POWER MODULES PM10RSH120 FLAT-BASE TYPE INSULATED PACKAGE Inverter Part CONTROL SUPPLY VOLTAGE TRIP-RESET TRANSIENT THERMAL FAULT OUTPUT PULSE WIDTH VS. LEVEL TEMPERATURE DEPENDENCY IMPEDANCE CHARACTERISTICS TEMPERATURE (TYPICAL) (Each IGBT) (TYPICAL) 1 3.0 15 10 V = 15V UV D UV r 2.5 14 0 10 2.0 13 -1 10 1.5 12 -2 10 1.0 11 SINGLE PULSE o STANDARD VALUE = R = 2 C/W th(j-c)Q -3 0 0 10 -50 0 50 100 150 -3 -2 -1 0 1 -50 0 50 100 150 10 10 10 10 10 o o JUNCTION TEMPERATURE, T , ( C) JUNCTION TEMPERATURE, T , ( C) j TIME, (s) j TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) 1 10 0 10 -1 10 -2 10 SINGLE PULSE o STANDARD VALUE = R = 5.5 C/W th(j-c)F -3 10 -3 -2 -1 0 1 10 10 10 10 10 TIME, (s) Sep.1998 http://store.iiic.cc/ TRANSIENT IMPEDANCE, Z , (NORMALIZED VALUE) FAULT OUTPUT PULSE WIDTH, t , (ms) th(j-c) fo UV TRIP-RESET LEVEL, UV , UV , (VOLTS) t r TRANSIENT IMPEDANCE, Z , (NORMALIZED VALUE) th(j-c) MITSUBISHI INTELLIGENT POWER MODULES PM10RSH120 FLAT-BASE TYPE INSULATED PACKAGE Brake Part SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION OUTPUT CHARACTERISTICS CHARACTERISTICS (TYPICAL) VOLTAGE CHARACTERISTICS (TYPICAL) (TYPICAL) 3.0 3.0 15 o T = 25 C j V = 0V CIN 2.5 2.5 15 2.0 10 2.0 13 V = 17V D 1.5 1.5 1.0 1.0 5 o T = 25 C V = 15V D j V = 0V V = 0V CIN CIN 0.5 0.5 o T = 25 C I = 10A j C o T = 125 C j 0 0 0 02 46 8 10 012 14 16 18 20 01 2 3 4 COLLECTOR CURRENT, I , (AMPERES) SUPPLY VOLTAGE, V , (VOLTS) COLLECTOR-EMITTER VOLTAGE, V , (VOLTS) C D CE TRANSIENT THERMAL TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS IMPEDANCE CHARACTERISTICS DIODE FORWARD CHARACTERISTICS (Each IGBT) (Each FWDi) 1 1 2 10 10 10 V = 15V D V = 15V CIN o T = 25 C j o T = 125 C 0 0 j 10 10 -1 -1 1 10 10 10 -2 -2 10 10 SINGLE PULSE SINGLE PULSE o o STANDARD VALUE = R = 3.0 C/W STANDARD VALUE = R = 5.5 C/W th(j-c)Q th(j-c)F 0 10 -3 -3 10 10 -3 -2 -1 0 1 -3 -2 -1 0 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 10 10 10 10 10 10 10 10 10 DIODE FORWARD VOLTAGE, V , (VOLTS) TIME, (s) TIME, (s) F Sep.1998 http://store.iiic.cc/ DIODE FORWARD CURRENT, I , (AMPERES) F SATURATION VOLTAGE V , (VOLTS) CE(sat) COLLECTOR-EMITTER SATURATION VOLTAGE TRANSIENT IMPEDANCE, Z , (NORMALIZED VALUE) th(j-c) V , (VOLTS) CE(sat) TRANSIENT IMPEDANCE, Z , (NORMALIZED VALUE) th(j-c) COLLECTOR CURRENT, I , (AMPERES) C