Hardware Documentation Data Sheet ® HAL 5xy Hall-Effect Sensor Family Edition Jan. 11, 2010 DSH000020_004E HAL 5xy DATA SHEET Copyright, Warranty, and Limitation of Liability Micronas Trademarks – HAL The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be Micronas Patents protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not Choppered Offset Compensation protected by expressly granted remain reserved by Micronas. Micronas patents no. US5260614, US5406202, EP0525235 and EP0548391. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due Third-Party Trademarks to these specifications. All other brand and product names or company names By this publication, Micronas does not assume respon- may be trademarks of their respective companies. sibility for patent infringements or other rights of third parties which may result from its use. Commercial con- ditions, product availability and delivery are exclusively subject to the respective order confirmation. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers’ technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this doc- ument and to make changes to the document’s content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas’ products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applica- tions intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photo- copied, stored on a retrieval system or transmitted without the express written consent of Micronas. 2 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 5xy Contents Page Section Title 4 1. Introduction 4 1.1. Features: 4 1.2. Family Overview 5 1.3. Marking Code 5 1.4. Operating Junction Temperature Range 5 1.5. Hall Sensor Package Codes 6 1.6. Solderability and Welding 7 2. Functional Description 8 3. Specifications 8 3.1. Outline Dimensions 13 3.2. Dimensions of Sensitive Area 13 3.3. Positions of Sensitive Areas 13 3.4. Absolute Maximum Ratings 13 3.4.1. Storage and Shelf Life 14 3.5. Recommended Operating Conditions 15 3.6. Characteristics 16 3.7. Magnetic Characteristics Overview 22 4. Type Description 22 4.1. HAL 501 24 4.2. HAL 502 26 4.3. HAL 503 28 4.4. HAL 504 30 4.5. HAL 505 32 4.6. HAL 506 34 4.7. HAL 507 36 4.8. HAL 508 38 4.9. HAL 509 40 4.10. HAL 516 42 4.11. HAL 519 44 4.12. HAL 523 46 5. Application Notes 46 5.1. Ambient Temperature 46 5.2. Extended Operating Conditions 46 5.3. Start-Up Behavior 46 5.4. EMC and ESD 48 6. Data Sheet History Micronas Jan. 11. 2010; DSH000020_004EN 3 HAL 5xy DATA SHEET Hall Effect Sensor Family 1.2. Family Overview in CMOS technology The types differ according to the magnetic flux density Release Note: Revision bars indicate significant values for the magnetic switching points and the tem- changes to the previous edition. perature behavior of the magnetic switching points, and the mode of switching. 1. Introduction The HAL 5xy family consists of different Hall switches Type Switching Sensitivity see produced in CMOS technology. All sensors include a Behavior Page temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain out- 501 bipolar very high 22 put transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with 502 unipolar low 24 the fixed reference values (switching points). Accord- 503 unipolar high 26 ingly, the output transistor is switched on or off. 504 unipolar medium 28 The sensors of this family differ in the switching behav- ior and the switching points. 505 latching low 30 The active offset compensation leads to constant mag- 506 unipolar high 32 netic characteristics over supply voltage and tempera- ture range. In addition, the magnetic parameters are 507 unipolar medium 34 robust against mechanical stress effects. 508 unipolar medium 36 The sensors are designed for industrial and automo- 509 unipolar low 38 tive applications and operate with supply voltages from 3.8 V to 24 V in the ambient temperature range from 516 unipolar with high 40 −40 °C up to 150 °C. inverted output All sensors are available in the SMD-package 519 unipolar with high 42 SOT89B-1 and in the leaded versions TO92UA-1 and inverted output TO92UA-2. (north polarity) 523 unipolar low 44 1.1. Features: – switching offset compensation at typically 62 kHz Latching Sensors: – operates from 3.8 V to 24 V supply voltage – overvoltage protection at all pins The output turns low with the magnetic south pole on the branded side of the package and turns high with – reverse-voltage protection at V -pin DD the magnetic north pole on the branded side. The out- – magnetic characteristics are robust regarding put does not change if the magnetic field is removed. mechanical stress effects For changing the output state, the opposite magnetic field polarity must be applied. – short-circuit protected open-drain output by thermal shut down – operates with static magnetic fields and dynamic Bipolar Switching Sensors: magnetic fields up to 10 kHz The output turns low with the magnetic south pole on – constant switching points over a wide supply volt- the branded side of the package and turns high with age range the magnetic north pole on the branded side. The out- – the decrease of magnetic flux density caused by ris- put state is not defined for all sensors if the magnetic ing temperature in the sensor system is compen- field is removed again. Some sensors will change the sated by a built-in negative temperature coefficient output state and some sensors will not. of the magnetic characteristics – ideal sensor for applications in extreme automotive and industrial environments – EMC corresponding to ISO 7637 4 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 5xy Unipolar Switching Sensors: 1.4. Operating Junction Temperature Range The output turns low with the magnetic south pole on The Hall sensors from Micronas are specified to the the branded side of the package and turns high if the chip temperature (junction temperature T ). J magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded A:T = −40 °C to +170 °C J side. K:T = −40 °C to +140 °C J Unipolar Switching Sensors with Inverted Output: Note: Due to the high power dissipation at high current consumption, there is a difference between the The output turns high with the magnetic south pole on ambient temperature (T ) and junction tempera- A the branded side of the package and turns low if the ture. Please refer to Section 5.1. on page 46 for magnetic field is removed. The sensor does not details. respond to the magnetic north pole on the branded side. 1.5. Hall Sensor Package Codes Unipolar Switching Sensors with Inverted Output Sensitive to North Pole: HALXXXPA-T The output turns high with the magnetic north pole on Temperature Range: A or K the branded side of the package and turns low if the Package: SF for SOT89B-1 magnetic field is removed. The sensor does not UA for TO92UA respond to the magnetic south pole on the branded side. Type: 5xy Example: HAL505UA-K 1.3. Marking Code → Type: 505 All Hall sensors have a marking on the package sur- → Package: TO92UA face (branded side). This marking includes the name → Temperature Range: T = −40 °C to +140 °C of the sensor and the temperature range. J Hall sensors are available in a wide variety of packag- Type Temperature Range ing versions and quantities. For more detailed informa- tion, please refer to the brochure: “Ordering Codes for A K Hall Sensors”. HAL 501 501A 501K HAL 502 502A 502K HAL 503 503A 503K 504K HAL 504 504A 505K HAL 505 505A 506K HAL 506 506A 507K HAL 507 507A 508K HAL 508 508A 509K HAL 509 509A 516K HAL 516 516A 519K HAL 519 519A 523K HAL 523 523A Micronas Jan. 11. 2010; DSH000020_004EN 5 HAL 5xy DATA SHEET 1.6. Solderability and Welding Soldering During soldering reflow processing and manual reworking, a component body temperature of 260 °C should not be exceeded. Welding Device terminals should be compatible with laser and resistance welding. Please note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. A very close control of the welding parameters is absolutely necessary in order to reach satisfying results. Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. 1 V DD 3 OUT 2,4 GND Fig. 1–1: Pin configuration 6 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 5xy 2. Functional Description HAL HAL5xx 5xy Reverse V DD Temperature Short Circuit & Hysteresis The HAL 5xx sensors are monolithic integrated circuits Voltage & Dependent Overvoltage Control Overvoltage 1 Bias Protection which switch in response to magnetic fields. If a mag- Protection netic field with flux lines perpendicular to the sensitive Hall Plate area is applied to the sensor, the biased Hall plate Comparator OUT Switch Output forces a Hall voltage proportional to this field. The Hall 3 voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and Clock adjusts the switching points to the decreasing induc- tion of magnets at higher temperatures. If the magnetic GND field exceeds the threshold levels, the open drain out- 2 put switches to the appropriate state. The built-in hys- teresis eliminates oscillation and provides switching Fig. 2–1: HAL 5xx block diagram behavior of output without bouncing. Magnetic offset caused by mechanical stress is com- pensated for by using the “switching offset compensa- f osc tion technique”. Thus, an internal oscillator provides a two-phase clock. The Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged t and compared with the actual switching point. Subse- quently, the open drain output switches to the appropri- B ate state. The time from crossing the magnetic switch- B ON ing level to switching of output can vary between zero and 1/f . osc t Shunt protection devices clamp voltage peaks at the V OUT output pin and V pin together with external series V DD OH resistors. Reverse current is limited at the V pin by DD V OL an internal series resistor up to −15 V. No external reverse protection diode is needed at the V pin for DD t t reverse voltages ranging from 0 V to −15 V. I DD t t 1/f = 16 μs f osc Fig. 2–2: Timing diagram Micronas Jan. 11. 2010; DSH000020_004EN 7 HAL 5xy DATA SHEET 3. Specifications 3.1. Outline Dimensions Fig. 3–1: SOT89B-1: Plastic Small Outline Transistor package, 4 leads Ordering code: SF Weight approximately 0.034 g 8 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 5xy Fig. 3–2: TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread Weight approximately 0.106 g Micronas Jan. 11. 2010; DSH000020_004EN 9 HAL 5xy DATA SHEET Fig. 3–3: TO92UA-2: Plastic Transistor Standard UA package, 3 leads, not spread Weight approximately 0.106 g 10 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 5xy Fig. 3–4: TO92UA-1: Dimensions ammopack inline, spread Micronas Jan. 11. 2010; DSH000020_004EN 11 HAL 5xy DATA SHEET Fig. 3–5: TO92UA-2: Dimensions ammopack inline, not spread 12 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 5xy 3.2. Dimensions of Sensitive Area 0.25 mm × 0.12 mm 3.3. Positions of Sensitive Areas SOT89B-1 TO92UA-1/-2 y 0.95 mm nominal 1.0 mm nominal A4 0.3 mm nominal 0.3 mm nominal D1 see drawing 3.05 mm +/- 0.05 mm H1 not applicable min. 21 mm max. 23.1 mm 3.4. Absolute Maximum Ratings Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso- lute maximum-rated voltages to this circuit. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Max. Unit 1) V Supply Voltage 1 −15 28 V DD 1) V Output Voltage 3 −0.3 28 V O 1) I Continuous Output On Current 3 − 50 mA O 2) T Junction Temperature Range −40 170 °C J 1) as long as T max is not exceeded J 2) t < 1000 h 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. Micronas Jan. 11. 2010; DSH000020_004EN 13 HAL 5xy DATA SHEET 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this speci- fication is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Max. Unit V Supply Voltage 1 3.8 24 V DD I Continuous Output On Current 3 0 20 mA O V Output Voltage 30 24 V O (output switched off) 14 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 5xy 3.6. Characteristics at T = −40 °C to +170 °C, V = 3.8 V to 24 V, J DD at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for T = 25 °C and V = 12 V J DD Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions I Supply Current 1 2.3 3 4.2 mA T = 25 °C DD J I Supply Current over 1 1.6 3 5.2 mA DD Temperature Range V Overvoltage Protection 1 − 28.5 32 V I = 25 mA, T = 25 °C, DDZ DD J at Supply t = 20 ms V Overvoltage Protection at Output 3 − 28 32 V I = 25 mA, T = 25 °C, OZ OH J t = 20 ms V Output Voltage 3 − 130 280 mV I = 20 mA , T = 25 °C OL OL J V Output Voltage over 3 − 130 400 mV I = 20 mA OL OL Temperature Range I Output Leakage Current 3 − 0.06 0.1 μA Output switched off, OH T = 25 °C, V = 3.8 to 24 V J OH I Output Leakage Current over 3 −− 10 μA Output switched off, OH Temperature Range T ≤150 °C, V = 3.8 to 24 V J OH f Internal Oscillator −− 62 − kHz osc Chopper Frequency 1) t Enable Time of Output after 1 − 50 −μsV = 12 V en(O) DD Setting of V DD t Output Rise Time 3 − 75 400 ns V = 12 V, r DD R = 820 Ohm, L t Output Fall Time 3 − 50 400 ns C = 20 pF f L R Thermal Resistance Junction −− 150 200 K/W Fiberglass Substrate thJSB case to Substrate Backside 30 mm x 10 mm x 1.5 mm, SOT89B-1 pad size see Fig. 3–6 R Thermal Resistance Junction −− 150 200 K/W thJA case to Soldering Point TO92UA-1, TO92UA-2 1) B > B + 2 mT or B < B − 2 mT for HAL50x, B > B + 2 mT or B < B − 2 mT for HAL51x ON OFF OFF ON 1.80 1.05 1.45 2.90 1.05 0.50 1.50 Fig. 3–6: Recommended pad size SOT89B-1 Dimensions in mm Micronas Jan. 11. 2010; DSH000020_004EN 15 HAL 5xy DATA SHEET 3.7. Magnetic Characteristics Overview at TJ = −40 °C to +170 °C, V = 3.8 V to 24 V, Typical Characteristics for V = 12 V DD DD Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Sensor Parameter On point B Off point B Hysteresis B Unit ON OFF HYS Switching T Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. J Type HAL 501 −40 °C −0.8 0.6 2.5 −2.5 −0.8 0.8 0.5 1.4 2 mT bipolar 25 °C −0.5 0.5 2.3 −2.3 −0.7 0.5 0.5 1.2 1.9 mT 170 °C −1.5 0.7 3 −2.5 −0.2 2 0.4 0.9 1.8 mT HAL 502 −40 °C1 2.8 5 −5 −2.8 −1 4.5 5.6 7.2 mT latching 25 °C1 2.6 4.5 −4.5 −2.6 −14.5 5.2 7 mT 170 °C 0.9 2.3 4.3 −4.3 −2.3 −0.9 3.5 4.6 6.8 mT HAL 503 −40 °C 6.4 8.6 10.8 −10.8 −8.6 −6.4 14.6 17.2 20.6 mT latching 25 °C6810 −10 −8 −6 13.6 1618mT 170 °C4 6.4 8.9 −8.9 −6 −4 11 12.4 16 mT HAL 504 −40 °C 10.3 13 15.7 5.3 7.5 9.6 4.4 5.5 6.5 mT unipolar 25 °C9.5 12 14.5 579456.5 mT 170 °C 8.5 10.2 13.7 4.2 5.9 8.5 3.2 4.3 6.4 mT HAL 505 −40 °C 11.8 15 18.3 −18.3 −15 −11.8 26 30 34 mT latching 25 °C 11 13.5 17 −17 −13.5 −11 24 27 32 mT 170 °C 9.4 11.7 16.1 −16.1 −11.7 −9.4 20 23.4 31.3 mT HAL 506 −40 °C 4.3 5.9 7.7 2.1 3.8 5.4 1.6 2.1 2.8 mT unipolar 25 °C 3.8 5.5 7.2 2 3.5 5 1.5 2 2.7 mT 170 °C 3.2 4.6 6.8 1.7 3 5.2 0.9 1.6 2.6 mT HAL 507 −40 °C 15.5 19.6 22.5 14.0 17.1 21.5 1.6 2.5 5.2 mT unipolar 25 °C 15.0 18.3 20.7 13.5 16.2 19.0 1.5 2.1 2.7 mT 170 °C 10.5 13.7 20.0 9.0 12.3 18.0 0.8 1.4 2.4 mT HAL 508 −40 °C 15.5 19 21.9 14 16.7 20 1.6 2.3 2.8 mT unipolar 25 °C151820.7 13.5 16191.5 2 2.7 mT 170 °C 12.7 15.3 20 11.4 13.6 18.3 1 1.7 2.6 mT HAL 509 −40 °C 23.1 27.4 31.1 19.9 23.8 27.2 2.9 3.6 3.9 mT unipolar 25 °C 23.1 26.8 30.4 19.9 23.2 26.6 2.8 3.5 3.9 mT 170 °C 21.3 25.4 28.9 18.3 22.1 25.3 2.5 3.3 3.8 mT HAL 516 −40 °C 2.1 3.8 5.4 4.3 5.9 7.7 1.6 2.1 2.8 mT unipolar 25 °C 2 3.5 5 3.8 5.5 7.2 1.5 2 2.7 mT inverted 170 °C 1.7 3 5.2 3.2 4.6 6.8 0.9 1.6 2.6 mT Note: For detailed descriptions of the individual types, see pages 22 and following. 16 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 5xy Magnetic Characteristics Overview, continued Sensor Parameter On point Off point Hysteresis B Unit ON OFF HYS Switching T Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. J Type HAL 519 −40 °C −5.4 −3.8 −2.1 −7.7 −5.9 −4.3 1.6 2.1 2.8 mT unipolar 25 °C −5 −3.6 −2 −7.2 −5.5 −3.8 1.5 1.9 2.7 mT inverted 170 °C −5.2 −3.0 −1.5 −6.8 −4.6 −2.8 0.9 1.6 2.6 mT HAL 523 −40 °C2834.5 421824307 10.5 14mT unipolar 25 °C2834.5 421824307 10.5 14mT 170 °C2834.5 421824307 10.5 14mT Note: For detailed descriptions of the individual types, see pages 22 and following Micronas Jan. 11. 2010; DSH000020_004EN 17 HAL 5xy DATA SHEET mA mA HAL 5xx HAL 5xx 5 25 20 I I DD DD 4 15 V = 24 V DD V = 12 V 10 DD 3 5 2 0 V = 3.8 V DD T = −40 °C A −5 T = 25 °C 1 A T = 170 °C A −10 −15 0 °C −50 0 50 100 150 200 −15 −5 5 15 25 35 V T A Fig. 3–7: Typical supply current Fig. 3–9: Typical supply current versus supply voltage versus ambient temperature kHz mA HAL 5xx HAL 5xx 100 5.0 90 4.5 f I osc DD V = 3.8 V 4.0 80 DD T = −40 °C A 70 3.5 T = 25 °C A 60 3.0 T = 100 °C A V = 4.5 V ... 24 V 2.5 50 DD T = 170 °C A 40 2.0 30 1.5 1.0 20 10 0.5 0 0.0 −50 0 50 100 150 200 °C 12345678 V V DD T A Fig. 3–8: Typical supply current Fig. 3–10: Typ. internal chopper frequency versus supply voltage versus ambient temperature 18 Jan. 11. 2010; DSH000020_004EN Micronas V DD DATA SHEET HAL 5xy kHz mV HAL 5xx HAL 5xx 100 400 I = 20 mA O 90 350 f V osc OL 80 300 70 T = 170 °C A T = 25 °C A 250 60 T = −40 °C A T = 100 °C A 50 200 T = 170 °C A 40 T = 25 °C 150 A 30 T = −40 °C A 100 20 50 10 0 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 V V V DD V DD Fig. 3–11: Typ. internal chopper frequency Fig. 3–13: Typical output low voltage versus supply voltage versus supply voltage kHz mV HAL 5xx HAL 5xx 100 600 I = 20 mA O 90 f V 500 osc OL 80 70 T = 25 °C A 400 T = −40 °C A 60 50 300 T = 170 °C A T = 170 °C A 40 T = 100 °C A 200 30 T = 25 °C A 20 100 T = −40 °C A 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V V DD V DD Fig. 3–12: Typ. internal chopper frequency Fig. 3–14: Typical output low voltage versus supply voltage versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 19 HAL 5xy DATA SHEET mV μΑ HAL 5xx HAL 5xx 2 400 10 I = 20 mA O 1 10 V = 3.8 V I DD OH I OH 300 V = 4.5 V DD 0 10 V = 24 V OH V = 24 V DD −1 10 200 −2 10 V = 3.8 V OH −3 10 100 −4 10 −5 0 10 −50 0 50 100 150 200 °C −50 0 50 100 150 200 °C T T A A Fig. 3–15: Typ. output low voltage Fig. 3–17: Typ. output leakage current versus ambient temperature versus ambient temperature dB V μ μΑ HAL 5xx HAL 5xx 4 30 10 V = 12 V P T = 25 ˚C 3 A 10 Quasi-Peak- 20 I I DD 2 OH Measrement 10 T = 170 °C A 1 10 max. spurious 10 signals T = 150 °C 0 A 10 T = 100 °C A −1 0 10 −2 10 T = 25 °C -10 A −3 10 −4 10 -20 T = −40 °C A −5 10 −6 -30 10 0.01 0.10 1 10 100 1000 MHz 15 20 25 30 35 V f V OH Fig. 3–16: Typ. output high current Fig. 3–18: Typ. spectrum of supply current versus output voltage 20 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 5xy dB V μ HAL 5xx 80 V = 12 V P T = 25 °C A 70 Quasi-Peak- V DD Measrement 60 test circuit 2 50 max. spurious signals 40 30 20 10 0 0.01 0.10 1 10 100 1000 MHz f Fig. 3–19: Typ. spectrum of supply current Micronas Jan. 11. 2010; DSH000020_004EN 21 HAL 501 DATA SHEET 4. Type Description Applications 4.1. HAL 501 The HAL 501 is the optimal sensor for applications with alternating magnetic signals and weak magnetic The HAL 501 is the most sensitive sensor of this family amplitude at the sensor position such as: with bipolar switching behavior (see Fig. 4.1.). – applications with large air gap or weak magnets, The output turns low with the magnetic south pole on – rotating speed measurement, the branded side of the package and turns high with – commutation of brushless DC motors, and the magnetic north pole on the branded side. The out- put state is not defined for all sensors if the magnetic – CAM shaft sensors, and field is removed again. Some sensors will change the – magnetic encoders. output state and some sensors will not. For correct functioning in the application, the sensor Output Voltage requires both magnetic polarities (north and south) on the branded side of the package. V O B HYS Magnetic Features: – switching type: bipolar V OL – very high sensitivity B 0 B B OFF ON –typical B : 0.5 mT at room temperature ON –typical B : −0.7 mT at room temperature OFF Fig. 4–1: Definition of magnetic switching points for HAL 501 – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Magnetic Characteristics at T = −40 °C to +170 °C, V = 3.8 V to 24 V, J DD Typical Characteristics for V = 12 V DD Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point B Off point B Hysteresis B Magnetic Offset B Unit ON OFF HYS OFFSET T Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. J −40 °C −0.8 0.6 2.5 −2.5 −0.8 0.8 0.5 1.4 2 −0.1 mT 25 °C −0.5 0.5 2.3 −2.3 −0.7 0.5 0.5 1.2 1.9 −1.4 −0.1 1.4 mT 140 °C −1.2 0.6 2.8 −2.5 −0.5 1.3 0.5 1.1 1.8 0 mT 170 °C −1.5 0.7 3 −2.5 −0.2 2 0.4 0.9 1.8 0.2 mT The hysteresis is the difference between the switching points B = B − B HYS ON OFF The magnetic offset is the mean value of the switching points B = (B + B ) / 2 OFFSET ON OFF 22 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 501 mT HAL 501 mT HAL 501 3 3 B max ON B B ON ON 2 2 B V = 3.8 V B OFF DD OFF B max OFF V = 4.5 ... 24 V DD 1 1 B B typ ON ON 0 0 B typ OFF −1 −1 B OFF B min ON T = −40 °C A T = 25 °C A −2 −2 T = 100 °C A B min OFF T = 170 °C A −3 −3 0 5 10 15 20 25 30 V −50 0 50 100 150 200 °C T , T V A J DD Fig. 4–2: Typ. magnetic switching points Fig. 4–4: Magnetic switching points versus supply voltage versus temperature Note: In the diagram “Magnetic switching points ver- sus temperature” the curves for: mT HAL 501 B min, B max, B min, and B max 3 ON ON OFF OFF refer to junction temperature, whereas typical curves refer to ambient temperature. B ON 2 B OFF B ON 1 0 −1 B OFF T = −40 °C A T = 25 °C A −2 T = 100 °C A T = 170 °C A −3 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V V DD Fig. 4–3: Typ. Magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 23 HAL 502 DATA SHEET 4.2. HAL 502 Applications The HAL 502 is the most sensitive latching sensor of The HAL 502 is the optimal sensor for all applications this family (see Fig. 4–5). with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: The output turns low with the magnetic south pole on – applications with large air gap or weak magnets, the branded side of the package and turns high with the magnetic north pole on the branded side. The out- – rotating speed measurement, put does not change if the magnetic field is removed. – commutation of brushless DC motors, For changing the output state, the opposite magnetic field polarity must be applied. – CAM shaft sensors, and – magnetic encoders. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Output Voltage Magnetic Features: V O – switching type: latching B HYS – high sensitivity – typical BON: 2.6 mT at room temperature V OL – typical BOFF: −2.6 mT at room temperature B B 0 B OFF ON – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Fig. 4–5: Definition of magnetic switching points for – typical temperature coefficient of magnetic switching the HAL 502 points is −1000 ppm/K Magnetic Characteristics at T = −40 °C to +170 °C, V = 3.8 V to 24 V, J DD Typical Characteristics for V = 12 V DD Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point B Off point B Hysteresis B Magnetic Offset Unit ON OFF HYS T Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. J −40 °C1 2.8 5 −5 −2.8 −1 4.5 5.6 7.2 − 0 − mT 25 °C1 2.6 4.5 −4.5 −2.6 −14.5 5.2 7 −1.5 0 1.5 mT 140 °C 0.9 2.4 4.3 −4.3 −2.4 −0.9 3.7 4.8 6.8 − 0 − mT 170 °C 0.9 2.3 4.3 −4.3 −2.3 −0.9 3.5 4.6 6.8 − 0 − mT The hysteresis is the difference between the switching points B = B − B HYS ON OFF The magnetic offset is the mean value of the switching points B = (B + B ) / 2 OFFSET ON OFF 24 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 502 mT HAL 502 mT HAL 502 6 6 B max ON B B ON ON 4 4 B B OFF OFF B ON B typ ON 2 2 B min ON T = −40 °C A V = 3.8 V DD T = 25 °C A 0 0 V = 4.5 ... 24 V DD T = 100 °C A T = 170 °C B max A OFF −2 −2 B typ OFF B OFF −4 −4 B min OFF −6 −6 −50 0 50 100 150 200 °C 0 5 10 15 20 25 30 V T , T V A J DD Fig. 4–6: Typ. magnetic switching points Fig. 4–8: Magnetic switching points versus supply voltage versus temperature Note: In the diagram “Magnetic switching points ver- sus temperature” the curves for: mT HAL 502 B min, B max, B min, and B max 6 ON ON OFF OFF refer to junction temperature, whereas typical curves refer to ambient temperature. B ON 4 B OFF B ON 2 T = −40 °C A T = 25 °C A 0 T = 100 °C A T = 170 °C A −2 B OFF −4 −6 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V V DD Fig. 4–7: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 25 HAL 503 DATA SHEET 4.3. HAL 503 Applications The HAL 503 is a latching sensor (see Fig. 4–9). The HAL 503 is the optimal sensor for applications with alternating magnetic signals such as: The output turns low with the magnetic south pole on – multipole magnet applications, the branded side of the package and turns high with the magnetic north pole on the branded side. The out- – rotating speed measurement, put does not change if the magnetic field is removed. – commutation of brushless DC motors, and For changing the output state, the opposite magnetic field polarity must be applied. – window lifters. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on Output Voltage the branded side of the package. V O Magnetic Features: B HYS – switching type: latching – medium sensitivity V OL –typical B : 7.6 mT at room temperature ON B B 0 B OFF ON –typical B : −7.6 mT at room temperature OFF – operates with static magnetic fields and dynamic Fig. 4–9: Definition of magnetic switching points for magnetic fields up to 10 kHz the HAL 503 – typical temperature coefficient of magnetic switching points is −1000 ppm/K Magnetic Characteristics at T = −40 °C to +170 °C, V = 3.8 V to 24 V, J DD Typical Characteristics for V = 12 V DD Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point B Off point B Hysteresis B Magnetic Offset Unit ON OFF HYS T Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. J −40 °C 6.4 8.4 10.8 −10.8 −8.6 −6.4 14.6 17 20.6 −−0.1 − mT 25 °C6 7.6 10 −10 −7.6 −6 13.6 15.2 18 −1.5 0 1.5 mT 140 °C 4.4 6.7 9.2 −9.2 −6.4 −4.4 11.5 13.1 16.5 − 0.1 − mT 170 °C4 6.4 8.9 −8.9 −6 −4 11 12.4 16 − 0.2 − mT The hysteresis is the difference between the switching points B = B − B HYS ON OFF The magnetic offset is the mean value of the switching points B = (B + B ) / 2 OFFSET ON OFF 26 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 503 mT HAL 503 mT HAL 503 12 12 B max ON B ON B B ON ON 8 8 B B OFF OFF B typ ON 4 4 B min ON T = −40 °C A T = 25 °C V = 3.8 V DD A 0 0 T = 100 °C V = 4.5... 24 V A DD T = 170 °C A B max -4 −4 OFF B typ OFF -8 −8 B OFF B min OFF −12 −12 0 5 10 15 20 25 30 V −50 0 50 100 150 200 °C T , T V A J DD Fig. 4–10: Typ. magnetic switching points Fig. 4–12: Magnetic switching points versus supply voltage versus temperature Note: In the diagram “Magnetic switching points ver- sus ambient temperature” the curves for: mT HAL 503 B min, B max, B min, and B max 12 ON ON OFF OFF refer to junction temperature, whereas typical curves refer to ambient temperature. B ON B ON 8 B OFF 4 T = −40 °C A T = 25 °C A T = 100 °C A 0 T = 170 °C A −4 −8 B OFF −12 V 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V DD Fig. 4–11: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 27 HAL 504 DATA SHEET 4.4. HAL 504 Applications The HAL504 is a unipolar switching sensor (see The HAL 504 is the optimal sensor for applications Fig. 4–13). with one magnetic polarity such as: – solid state switches, The output turns low with the magnetic south pole on the branded side of the package and turns high if the – contactless solution to replace microswitches, magnetic field is removed. The sensor does not – position and end-point detection, and respond to the magnetic north pole on the branded side. – rotating speed measurement. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded Output Voltage side of the package. V O B HYS Magnetic Features: – switching type: unipolar, V OL – medium sensitivity –typical B : 12 mT at room temperature ON 0 B B B OFF ON –typical B : 7 mT at room temperature OFF Fig. 4–13: Definition of magnetic switching points for – typical temperature coefficient of magnetic switching the HAL 504 points is −1000 ppm/K – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz. Magnetic Characteristics at T = −40 °C to +170 °C, V = 3.8 V to 24 V, J DD Typical Characteristics for V = 12 V DD Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point B Off point B Hysteresis B Magnetic Offset Unit ON OFF HYS T Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. J −40 °C 10.3 13 15.7 5.3 7.5 9.6 4.4 5.5 6.5 − 10.2 − mT 25 °C 9.5 12 14.5 57 94 56.5 7.2 9.5 11.8 mT 140 °C 8.7 10.6 13.9 4.4 6.1 8.6 3.4 4.5 6.4 − 8.4 − mT 170 °C 8.5 10.2 13.7 4.2 5.9 8.5 3.2 4.3 6.4 − 8 − mT The hysteresis is the difference between the switching points B = B − B HYS ON OFF The magnetic offset is the mean value of the switching points B = (B + B ) / 2 OFFSET ON OFF 28 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 504 mT HAL 504 mT HAL 504 18 18 16 16 B B ON ON B max B ON B OFF OFF 14 14 B ON 12 12 B typ ON B min 10 ON 10 B max OFF 8 8 B typ 6 OFF 6 B T = −40 °C OFF A B min 4 OFF 4 T = 25 °C A V = 3.8 V DD T = 100 °C A 2 2 V = 4.5 ... 24 V DD T = 170 °C A 0 0 −50 0 50 100 150 200 0 5 10 15 20 25 30 °C V T , T V A J DD Fig. 4–14: Typ. magnetic switching points Fig. 4–16: Magnetic switching points versus supply voltage versus temperature Note: In the diagram “Magnetic switching points ver- sus temperature” the curves for: mT HAL 504 B min, B max, B min, and B max 18 ON ON OFF OFF refer to junction temperature, whereas typical curves refer to ambient temperature. 16 B ON B OFF 14 12 B ON 10 8 B OFF 6 T = −40 °C A 4 T = 25 °C A T = 100 °C A 2 T = 170 °C A 0 V 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V DD Fig. 4–15: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 29 HAL 505 DATA SHEET 4.5. HAL 505 Applications The HAL 505 is a latching sensor (see Fig. 4–17). The HAL 505 is the optimal sensor for applications with alternating magnetic signals such as: The output turns low with the magnetic south pole on – multipole magnet applications, the branded side of the package and turns high with the magnetic north pole on the branded side. The out- – rotating speed measurement, put does not change if the magnetic field is removed. – commutation of brushless DC motors, and For changing the output state, the opposite magnetic field polarity must be applied. – window lifters. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on Output Voltage the branded side of the package. V O B HYS Magnetic Features: – switching type: latching, V OL – low sensitivity B –typical B : 13.5 mT at room temperature ON B 0 B OFF ON –typical B : −13.5 mT at room temperature OFF Fig. 4–17: Definition of magnetic switching points for – operates with static magnetic fields and dynamic the HAL 505 magnetic fields up to 10 kHz – typical temperature coefficient of magnetic switching points is −1000 ppm/K Magnetic Characteristics at T = −40 °C to +170 °C, V = 3.8 V to 24 V, J DD Typical Characteristics for V = 12 V DD Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point B Off point B Hysteresis B Magnetic Offset Unit ON OFF HYS T Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. J −40 °C 11.8 15 18.3 -18.3 -15 -11.8 26 30 34 − 0 − mT 25 °C 11 13.5 17 -17 -13.5 -11 24 27 32 -1.5 0 1.5 mT 140 °C 9.7 12 16.3 -16.3 -12 -9.7 21 24.2 31.3 − 0 − mT 170 °C 9.4 11.7 16.1 -16.1 -11.7 -9.4 20 23.4 31.3 − 0 − mT The hysteresis is the difference between the switching points B = B − B HYS ON OFF The magnetic offset is the mean value of the switching points B = (B + B ) / 2 OFFSET ON OFF 30 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 505 mT HAL 505 mT HAL 505 20 20 B max ON B ON 15 15 B B ON ON B B OFF B typ OFF ON 10 10 B min ON 5 5 T = −40 °C A V = 3.8 V DD 0 0 T = 25 °C A V = 4.5 ... 24 V DD T = 100 °C A −5 −5 T = 170 °C A B max OFF −10 −10 B typ OFF −15 −15 B OFF B min OFF −20 −20 °C 0 5 10 15 20 25 30 V −50 0 50 100 150 200 T , T V A J DD Fig. 4–18: Typ. magnetic switching points Fig. 4–20: Magnetic switching points versus supply voltage versus temperature Note: In the diagram “Magnetic switching points ver- sus ambient temperature” the curves for: mT HAL 505 B min, B max, B min, and B max 20 ON ON OFF OFF refer to junction temperature, whereas typical B curves refer to ambient temperature. ON 15 B ON B OFF 10 5 T = −40 °C A T = 25 °C A 0 T = 100 °C A T = 170 °C A −5 −10 −15 B OFF −20 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V V DD Fig. 4–19: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 31 HAL 506 DATA SHEET 4.6. HAL 506 Applications The HAL 506 is the most sensitive unipolar switching The HAL 506 is the optimal sensor for all applications sensor of this family (see Fig. 4–21). with one magnetic polarity and weak magnetic ampli- tude at the sensor position such as: The output turns low with the magnetic south pole on the branded side of the package and turns high if the – applications with large air gap or weak magnets, magnetic field is removed. The sensor does not – solid state switches, respond to the magnetic north pole on the branded side. – contactless solution to replace microswitches, – position and end point detection, and For correct functioning in the application, the sensor requires only the magnetic south pole on the branded – rotating speed measurement. side of the package. In the HAL 5xx family, the HAL 516 is a sensor with the Output Voltage same magnetic characteristics but with an inverted output characteristic. V O Magnetic Features: B HYS – switching type: unipolar, – high sensitivity V OL –typical B : 5.5 mT at room temperature ON 0 B B B OFF ON –typical B : 3.5 mT at room temperature OFF – operates with static magnetic fields and dynamic Fig. 4–21: Definition of magnetic switching points for magnetic fields up to 10 kHz the HAL 506 – typical temperature coefficient of magnetic switching points is −1000 ppm/K Magnetic Characteristics at T = −40 °C to +170 °C, V =3.8 V to 24 V, J DD Typical Characteristics for V = 12 V DD Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point B Off point B Hysteresis B Magnetic Offset Unit ON OFF HYS T Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. J −40 °C 4.3 5.9 7.7 2.1 3.8 5.4 1.6 2.1 2.8 − 4.8 − mT 25 °C 3.8 5.5 7.2 2 3.5 5 1.5 2 2.7 3.8 4.5 6.2 mT 140 °C 3.4 4.8 6.9 1.8 3.1 5.1 1 1.7 2.6 − 4 − mT 170 °C 3.2 4.6 6.8 1.7 3 5.2 0.9 1.6 2.6 − 3.8 − mT The hysteresis is the difference between the switching points B = B − B HYS ON OFF The magnetic offset is the mean value of the switching points B = (B + B ) / 2 OFFSET ON OFF 32 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 506 mT HAL 506 mT HAL 506 8 8 B max ON 7 7 B B ON ON B B OFF OFF B ON 6 6 5 B typ 5 ON B max OFF 4 4 B min ON B typ OFF 3 3 B OFF T = −40 °C A B min OFF 2 2 T = 25 °C A T = 100 °C A V = 3.8 V DD 1 1 T = 170 °C A V = 4.5 ... 24 V DD 0 0 0 5 10 15 20 25 30 V −50 0 50 100 150 200 °C T , T V A J DD Fig. 4–22: Typ. magnetic switching points Fig. 4–24: Magnetic switching points versus supply voltage versus temperature Note: In the diagram “Magnetic switching points ver- sus temperature” the curves for: mT HAL 506 B min, B max, B min, and B max 8 ON ON OFF OFF refer to junction temperature, whereas typical curves refer to ambient temperature. 7 B ON B OFF B ON 6 5 4 3 B OFF T = −40 °C A 2 T = 25 °C A T = 100 °C A 1 T = 170 °C A 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V V DD Fig. 4–23: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 33 HAL 507 DATA SHEET 4.7. HAL 507 Applications The HAL507 is a unipolar switching sensor (see The HAL 507 is the optimal sensor for applications Fig. 4–25). with one magnetic polarity such as: – solid state switches, The output turns low with the magnetic south pole on the branded side of the package and turns high if the – contactless solution to replace micro switches, magnetic field is removed. The sensor does not – position and end point detection, and respond to the magnetic north pole on the branded side. – rotating speed measurement. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded Output Voltage side of the package. V O B HYS Magnetic Features: – switching type: unipolar V OL – medium sensitivity –typical B : 18.3 mT at room temperature ON 0 B B B OFF ON –typical B : 16.2 mT at room temperature OFF Fig. 4–25: Definition of magnetic switching points for – operates with static magnetic fields and dynamic the HAL 507 magnetic fields up to 10 kHz – typical temperature coefficient of magnetic switching points is −1700 ppm/K Magnetic Characteristics at T = −40 °C to +170 °C, V = 3.8 V to 24 V, J DD Typical Characteristics for V = 12 V DD Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point B Off point B Hysteresis B Magnetic Offset Unit ON OFF HYS T Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. J −40 °C 15.5 19.6 22.5 14.0 17.1 21.5 1.6 2.5 5.2 − 18.3 − mT 25 °C 15.0 18.3 20.7 13.5 16.2 19.0 1.5 2.1 2.7 − 17.2 − mT 140 °C 11.5 14.8 20.2 10.0 13.2 18.2 1.0 1.6 2.6 − 14 − mT 170 °C 10.5 13.7 20.0 9.0 12.3 18.0 0.8 1.4 2.4 − 13 − mT The hysteresis is the difference between the switching points B = B − B HYS ON OFF The magnetic offset is the mean value of the switching points B = (B + B ) / 2 OFFSET ON OFF 34 Jan. 11. 2010; 000020_004ENDS Micronas DATA SHEET HAL 507 mT HAL 507 mT HAL 507 25 25 B B ON B max ON ON B B B OFF OFF ON 20 20 B max OFF B typ ON 15 15 B typ OFF B OFF B min ON 10 10 T = −40 °C A B min OFF T = 25 °C A T = 100 °C A V = 3.8 V 5 DD 5 T = 170 °C A V = 4.5 ... 24 V DD 0 0 0 5 10 15 20 25 30 V −50 0 50 100 150 200 °C T , T V A J DD Fig. 4–26: Typ. magnetic switching points Fig. 4–28: Magnetic switching points versus supply voltage versus temperature Note: In the diagram “Magnetic switching points ver- sus ambient temperature” the curves for: mT HAL 507 B min, B max, B min, and B max 25 ON ON OFF OFF refer to junction temperature, whereas typical curves refer to ambient temperature. B ON B B OFF ON 20 15 B OFF 10 T = −40 °C A T = 25 °C A T = 100 °C 5 A T = 170 °C A 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V V DD Fig. 4–27: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; 000020_004ENDS 35 HAL 508 DATA SHEET 4.8. HAL 508 Applications The HAL508 is a unipolar switching sensor (see The HAL 508 is the optimal sensor for applications Fig. 4–29). with one magnetic polarity such as: – solid state switches, The output turns low with the magnetic south pole on the branded side of the package and turns high if the – contactless solution to replace microswitches, magnetic field is removed. The sensor does not – position and end-point detection, and respond to the magnetic north pole on the branded side. – rotating speed measurement. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded Output Voltage side of the package. V O Magnetic Features: B HYS – switching type: unipolar, – medium sensitivity V OL –typical B : 18 mT at room temperature ON –typical B : 16 mT at room temperature 0 B B B OFF OFF ON – operates with static magnetic fields and dynamic Fig. 4–29: Definition of magnetic switching points for magnetic fields up to 10 kHz the HAL 508 – typical temperature coefficient of magnetic switching points is −1000 ppm/K Magnetic Characteristics at T = −40 °C to +170 °C, V = 3.8 V to 24 V, J DD Typical Characteristics for V = 12 V DD Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point B Off point B Hysteresis B Magnetic Offset Unit ON OFF HYS T Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. J −40 °C 15.5 19 21.9 14 16.7 20 1.6 2.3 2.8 - 17.8 - mT 25 °C 15 18 20.7 13.5 16 19 1.5 2 2.7 14 17 20 mT 140 °C 13.2 15.8 20.2 11.9 14.1 18.5 1.1 1.7 2.6 - 15 - mT 170 °C 12.7 15.3 20 11.4 13.6 18.3 1 1.7 2.6 - 14.4 - mT The hysteresis is the difference between the switching points B = B − B HYS ON OFF The magnetic offset is the mean value of the switching points B = (B + B ) / 2 OFFSET ON OFF 36 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 508 mT HAL 508 mT HAL 508 25 25 B B max B ON ON ON B B OFF OFF 20 20 B B max ON OFF B typ ON 15 15 B typ OFF B min ON B OFF B min OFF 10 10 T = −40 °C A T = 25 °C A V = 3.8 V DD T = 100 °C A 5 5 V = 4.5 ... 24 V DD T = 170 °C A 0 0 −50 0 50 100 150 200 0 5 10 15 20 25 30 °C V T , T V A J DD Fig. 4–30: Typ. magnetic switching points Fig. 4–32: Magnetic switching points versus supply voltage versus temperature Note: In the diagram “Magnetic switching points ver- sus temperature” the curves for: mT HAL 508 B min, B max, B min, and B max 25 ON ON OFF OFF refer to junction temperature, whereas typical curves refer to ambient temperature. B ON B OFF B 20 ON 15 B OFF T = −40 °C A 10 T = 25 °C A T = 100 °C A T = 170 °C 5 A 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V V DD Fig. 4–31: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 37 HAL 509 DATA SHEET 4.9. HAL 509 Applications The HAL509 is a unipolar switching sensor (see The HAL 509 is the optimal sensor for applications Fig. 4–33). with one magnetic polarity and strong magnetic fields at the sensor position such as: The output turns low with the magnetic south pole on – solid state switches, the branded side of the package and turns high if the magnetic field is removed. The sensor does not – contactless solution to replace microswitches, respond to the magnetic north pole on the branded – position and end-point detection, and side. – rotating speed measurement. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Output Voltage V Magnetic Features: O B – switching type: unipolar, HYS – low sensitivity –typical B : 26.8 mT at room temperature V ON OL –typical B : 23.2 mT at room temperature OFF 0 B B B OFF ON – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Fig. 4–33: Definition of magnetic switching points for the HAL 509 – typical temperature coefficient of magnetic switching points is −300 ppm/K Magnetic Characteristics at T = −40 °C to +170 °C, V = 3.8 V to 24 V, J DD Typical Characteristics for V = 12 V DD Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point B Off point B Hysteresis B Magnetic Offset Unit ON OFF HYS T Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. J −40 °C 23.1 27.4 31.1 19.9 23.8 27.2 2.9 3.6 3.9 − 25.6 − mT 25 °C 23.1 26.8 30.4 19.9 23.2 26.6 2.8 3.5 3.9 21.5 25 28.5 mT 140 °C 21.7 25.7 29.2 18.6 22.4 25.6 2.6 3.3 3.8 − 24 − mT 170 °C 21.3 25.4 28.9 18.3 22.1 25.3 2.5 3.3 3.8 − 23.7 − mT The hysteresis is the difference between the switching points B = B − B HYS ON OFF The magnetic offset is the mean value of the switching points B = (B + B ) / 2 OFFSET ON OFF 38 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 509 mT HAL 509 mT HAL 509 35 35 B max ON B B ON 30 ON 30 B B B OFF B max OFF ON OFF B typ ON 25 25 B typ OFF B OFF B min ON 20 20 B min OFF 15 15 T = −40 °C A V = 3.8 V DD T = 25 °C 10 10 A V = 4.5 ... 24 V DD T = 100 °C A 5 5 T = 170 °C A 0 0 −50 0 50 100 150 200 0 5 10 15 20 25 30 °C V T , T V A J DD Fig. 4–34: Typ. magnetic switching points Fig. 4–36: Magnetic switching points versus supply voltage versus temperature Note: In the diagram “Magnetic switching points ver- sus temperature” the curves for: mT HAL 509 B min, B max, B min, and B max 35 ON ON OFF OFF refer to junction temperature, whereas typical curves refer to ambient temperature. B ON 30 B B OFF ON 25 B OFF 20 15 T = −40 °C A 10 T = 25 °C A T = 100 °C A 5 T = 170 °C A 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V V DD Fig. 4–35: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 39 HAL 516 DATA SHEET 4.10. HAL 516 Applications The HAL 516 is the most sensitive unipolar switching The HAL 516 is the optimal sensor for all applications sensor with an inverted output of this family (see with one magnetic polarity and weak magnetic ampli- Fig. 4–37). tude at the sensor position where an inverted output signal is required such as: The output turns high with the magnetic south pole on – applications with large air gap or weak magnets, the branded side of the package and turns low if the magnetic field is removed. The sensor does not – solid state switches, respond to the magnetic north pole on the branded – contactless solution to replace microswitches, side. – position and end-point detection, and For correct functioning in the application, the sensor – rotating speed measurement. requires only the magnetic south pole on the branded side of the package. Output Voltage In the HAL 5xx family, the HAL 506 is a sensor with the same magnetic characteristics but with a normal out- V O put characteristic. B HYS Magnetic Features: V OL – switching type: unipolar inverted – high sensitivity 0 B B B ON OFF –typical B : 3.5 mT at room temperature ON Fig. 4–37: Definition of magnetic switching points for –typical B : 5.5 mT at room temperature OFF – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – typical temperature coefficient of magnetic switching the HAL 516 points is −1000 ppm/K Magnetic Characteristics at T = −40 °C to +170 °C, V = 3.8 V to 24 V, J DD Typical Characteristics for V = 12 V DD Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point B Off point B Hysteresis B Magnetic Offset Unit ON OFF HYS T Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. J −40 °C 2.1 3.8 5.4 4.3 5.9 7.7 1.6 2.1 2.8 − 4.8 − mT 25 °C 2 3.5 5 3.8 5.5 7.2 1.5 2 2.7 3.8 4.5 6.2 mT 140 °C 1.8 3.1 5.1 3.4 4.8 6.9 1 1.7 2.6 − 4 − mT 170 °C 1.7 3 5.2 3.2 4.6 6.8 0.9 1.6 2.6 − 3.8 − mT The hysteresis is the difference between the switching points B = B − B HYS ON OFF The magnetic offset is the mean value of the switching points B = (B + B ) / 2 OFFSET ON OFF 40 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 516 mT HAL 516 mT HAL 516 8 8 B max OFF 7 7 B B ON ON B B OFF OFF 6 6 B OFF B typ 5 OFF 5 B max ON 4 4 B min OFF B ON B typ ON 3 3 T = −40 °C A B min ON 2 2 T = 25 °C A V = 3.8 V T = 100 °C DD A 1 1 T = 170 °C V = 4.5 ... 24 V A DD 0 0 0 5 10 15 20 25 30 V −50 0 50 100 150 200 °C T , T V A J DD Fig. 4–38: Typ. magnetic switching points Fig. 4–40: Magnetic switching points versus supply voltage versus temperature Note: In the diagram “Magnetic switching points ver- sus temperature” the curves for: mT HAL 516 B min, B max, B min, and B max 8 ON ON OFF OFF refer to junction temperature, whereas typical curves refer to ambient temperature. 7 B ON B OFF B ON 6 5 4 3 B OFF T = −40 °C A 2 T = 25 °C A T = 100 °C A 1 T = 170 °C A 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V V DD Fig. 4–39: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 41 HAL 519 DATA SHEET 4.11. HAL 519 Applications The HAL 519 is a very sensitive unipolar switching The HAL 519 is the optimal sensor for all applications sensor with an inverted output sensitive only to the with the north magnetic polarity and weak magnetic magnetic north polarity (see Fig. 4–41). amplitude at the sensor position where an inverted output signal is required such as: The output turns high with the magnetic north pole on – solid-state switches, the branded side of the package and turns low if the magnetic field is removed. The sensor does not – contactless solution to replace microswitches, respond to the magnetic south pole on the branded – position and end-point detection, and side, the output remains low. For correct functioning in the application, the sensor requires only the magnetic – rotating speed measurement. north pole on the branded side of the package. Output Voltage Magnetic Features: V – switching type: unipolar inverted, north sensitive O – high sensitivity B HYS –typical B : −3.5 mT at room temperature ON V –typical B : −5.5 mT at room temperature OL OFF – operates with static magnetic fields and dynamic B B 0 B magnetic fields up to 10 kHz OFF ON – typical temperature coefficient of magnetic switching Fig. 4–41: Definition of magnetic switching points for points is −1000 ppm/K the HAL 519 Magnetic Characteristics at T = −40 °C to +170 °C, V = 3.8 V to 24 V, J DD Typical Characteristics for V = 12 V DD Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point B Off point B Hysteresis B Magnetic Offset Unit ON OFF HYS T Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. J −40 °C -5.4 -3.8 -2.1 -7.7 -5.9 -4.3 1.6 2.1 2.8 − -4.8 − mT 25 °C -5 -3.6 -2 -7.2 -5.5 -3.8 1.5 1.9 2.7 -6.2 -4.5 -3.8 mT 140 °C -5.1 -3.1 -1.7 -6.8 -4.8 -3.1 1 1.7 2.6 − -4 − mT 170 °C -5.2 -3 -1.5 -6.8 -4.6 -2.8 0.9 1.6 2.6 − -3.8 − mT The hysteresis is the difference between the switching points B = B − B HYS ON OFF The magnetic offset is the mean value of the switching points B = (B + B ) / 2 OFFSET ON OFF 42 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 519 mT HAL 519 mT HAL 519 0 0 T = −40 °C V = 3.8 V A DD −1 −1 T = 25 °C B V = 4.5 V ... 24 V B A ON DD ON B B OFF OFF B max T = 100 °C ON A −2 −2 T = 170 °C A −3 −3 B typ B ON ON B max OFF −4 −4 B min ON −5 −5 B OFF −6 −6 B typ OFF −7 −7 B min OFF −8 −8 −50 0 50 100 150 200 °C 0 5 10 15 20 25 30 V T , T V A J DD Fig. 4–42: Typ. magnetic switching points Fig. 4–44: Magnetic switching points versus supply voltage versus temperature Note: In the diagram “Magnetic switching points ver- sus temperature” the curves for: mT HAL 519 B min, B max, B min, and B max 0 ON ON OFF OFF refer to junction temperature, whereas typical T = −40 °C A curves refer to ambient temperature. −1 T = 25 °C B A ON B OFF T = 100 °C A −2 T = 170 °C A B ON −3 −4 −5 −6 B OFF −7 −8 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V V DD Fig. 4–43: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 43 HAL 523 DATA SHEET 4.12. HAL 523 Applications The HAL 523 is the least sensitive unipolar switching The HAL 523 is the optimal sensor for applications sensor of this family (see Fig. 4–45). with one magnetic polarity and strong magnetic fields at the sensor position such as: The output turns low with the magnetic south pole on – solid-state switches, the branded side of the package and turns high if the magnetic field is removed. The sensor does not – contactless solution to replace microswitches, respond to the magnetic north pole on the branded – position and end-point detection, and side. – rotating speed measurement. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Output Voltage V O Magnetic Features: B HYS – switching type: unipolar, – low sensitivity V OL –typical B : 34.5 mT at room temperature ON 0 B B B OFF ON –typical B : 24 mT at room temperature OFF – operates with static magnetic fields and dynamic Fig. 4–45: Definition of magnetic switching points for magnetic fields up to 10 kHz the HAL 523 Magnetic Characteristics at T = −40 °C to +170 °C, V = 3.8 V to 24 V, J DD Typical Characteristics for V = 12 V DD Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point B Off point B Hysteresis B Magnetic Offset Unit ON OFF HYS T Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. J −40 °C 28 34.5 421824 307 10.5 14 − 29.3 − mT 25 °C 28 34.5 421824 307 10.5 14 − 29.3 − mT 140 °C 28 34.5 421824 307 10.5 14 − 29.3 − mT 170 °C 28 34.5 421824 307 10.5 14 − 29.3 − mT The hysteresis is the difference between the switching points B = B − B HYS ON OFF The magnetic offset is the mean value of the switching points B = (B + B ) / 2 OFFSET ON OFF 44 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 523 mT HAL 523 mT HAL 523 45 45 B max ON 40 40 B B ON ON B B B ON OFF OFF B typ 35 ON 35 B max OFF 30 30 B B min OFF ON 25 25 B typ OFF 20 20 B min OFF T = −40 °C 15 15 A T = 25 °C A 10 10 T = 100 °C A V = 3.8 V DD T = 170 °C A V = 4.5 ... 24 V 5 5 DD 0 0 0 5 10 15 20 25 30 −50 0 50 100 150 200 V °C T , T V A J DD Fig. 4–46: Typ. magnetic switching points Fig. 4–48: Magnetic switching points versus supply voltage versus temperature Note: In the diagram “Magnetic switching points ver- sus temperature” the curves for: mT HAL 523 B min, B max, B min, and B max 45 ON ON OFF OFF refer to junction temperature, whereas typical curves refer to ambient temperature. 40 B ON B B ON OFF 35 30 25 B OFF 20 T = −40 °C A 15 T = 25 °C A 10 T = 100 °C A T = 170 °C A 5 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V V DD Fig. 4–47: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 45 HAL 5xy DATA SHEET 5. Application Notes 5.3. Start-Up Behavior 5.1. Ambient Temperature Due to the active offset compensation, the sensors have an initialization time (enable time t ) after en(O) Due to the internal power dissipation, the temperature applying the supply voltage. The parameter t is en(O) on the silicon chip (junction temperature T ) is higher specified in the Electrical Characteristics (see J than the temperature outside the package (ambient page 15). temperature T ). A During the initialization time, the output state is not defined and the output can toggle. After t , the out- en(O) T = T + ΔT put will be low if the applied magnetic field B is above J A B . The output will be high if B is below B . In case ON OFF of sensors with an inverted switching behavior (HAL 516 ... HAL 519), the output state will be high if B Under static conditions and continuous operation, the > B and low if B < B . OFF ON following equation applies: Note: For magnetic fields between B and B , the OFF ON ΔTI = × V × R DD DD th output state of the HAL sensor will be either low or high after applying V . In order to achieve a DD defined output state, the applied magnetic field must be above B , respectively, below B . ON OFF For all sensors, the junction temperature range T is J specified. The maximum ambient temperature T Amax can be calculated as: 5.4. EMC and ESD T = T – ΔT Amax Jmax For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 5–1). The series resistor For typical values, use the typical parameters. For and the capacitor should be placed as closely as pos- worst case calculation, use the max. parameters for sible to the HAL sensor. I and R , and the max. value for V from the appli- DD th DD cation. Applications with this arrangement passed the EMC tests according to the product standards ISO 7637. 5.2. Extended Operating Conditions Please contact Micronas for the detailed investigation reports with the EMC and ESD results. All sensors fulfil the electrical and magnetic character- istics when operated within the Recommended Oper- ating Conditions (see page 14). R V Supply Voltage Below 3.8 V 220 Ω Typically, the sensors operate with supply voltages R 1.2 kΩ L 1 V DD above 3 V, however, below 3.8 V some characteristics V EMC may be outside the specification. OUT V P 3 4.7 nF 20 pF Note: The functionality of the sensor below 3.8 V is not tested on a regular base. For special test 2 GND conditions, please contact Micronas. Fig. 5–1: Test circuit for EMC investigations 46 Jan. 11. 2010; DSH000020_004EN Micronas DATA SHEET HAL 5xy ������������������������� Micronas Jan. 11. 2010; DSH000020_004EN 47 HAL 5xy DATA SHEET 6. Data Sheet History 4. Final data sheet: “HAL 5xy Hall-Effect Sensor Fam- ily”, Nov. 27, 2003, 6251-485-4DS 1. Final data sheet: “HAL 501...506, 508, 509, 516... (DSH000020_001EN) . Fourth release of the data 518, Hall Effect Sensor Family, Aug. 11, 1999, 6251- sheet . Major changes: 485-1DS. First release of the final data sheet.Major – new package diagrams for SOT89-1 and TO92UA-1 changes to the previous edition “HAL501 ... HAL506, HAL 508", Hall Effect Sensor ICs, May 5, – package diagram for TO92UA-2 added 1997, 6251-405-1DS: – ammopack diagrams for TO92UA-1/-2 added – additional types: HAL509, HAL516 ... HAL518 5. Final data sheet : “HAL 5xy Hall-Effect Sensor – additional package SOT-89B Family”, Dec. 4, 2008, DSH000020_002EN. Fifth release of the data sheet . Major changes: – additional temperature range “K” – Section 1.6. on page 6 “Solderability and Welding” – outline dimensions for SOT-89A and TO-92UA updated changed – figures “Definition of magnetic switching points” – absolute maximum ratings changed updated for HAL508, HAL516 and HAL519 – electrical characteristics changed – recommended footprint SOT89-B1 added – magnetic characteristics for HAL 501, HAL 503,HAL – all package diagrams updated. 506, and HAL 509 changed 6. Final data sheet : “HAL 5xy Hall-Effect Sensor 2. Final data sheet: “HAL 501...506, 508, 509, 516... Family”, Feb. 12, 2009, DSH000020_003EN. Sixth 519, 523, Hall Effect Sensor Family”, Feb. 14, 2001, release of the data sheet . Minor changes: 6251-485-2DS. Second release of the final data sheet. Major changes: – Section 3.3. “Positions of Sensitive Areas” updated (parameter A4 for SOT89-B1 was added). – additional types: HAL519, HAL523 7. Final data sheet : “HAL 5xy Hall-Effect Sensor – phased-out package SOT-89A removed Family”, Jan. 11. 2010, DSH000020_004EN. – temperature range “C” removed Seventh release of the data sheet. Major changes: – outline dimensions for SOT-89B: reduced toler- ances – HAL 507 added 3. Final data sheet: “HAL 501...506, 508, 509, 516... – TO92UA outline dimensions updated 519, 523, Hall Effect Sensor Family”, Oct. 7, 2002, 6251-485-3DS. Third release of the final data sheet. Major changes: – temperature range “E” removed – outline dimensions for TO-92UA: package diagram updated – absolute maximum ratings changed – section 3.4.1. added – electrical characteristics changed – magnetic characteristics changed Micronas GmbH Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: docservice@micronas.com ⋅ Internet: www.micronas.com 48 Jan. 11. 2010; DSH000020_004EN Micronas