M/A-COM LF2802A

Description
M/A-Com LF2802A Rf Mosfetpower Transistor, 2w, 28v 500-1000mhz
Part Number
LF2802A
Price
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Manufacturer
M/A-COM
Lead Time
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Category
PRODUCTS - L
Features
- Common source configuration
- DMOS structure
- Lower capacitances for broadband operation
- Lower noise floor
- N-Channel enhancement mode device
Datasheet
Extracted Text
LF2802A RF Power MOSFET Transistor M/A-COM Products Released; RoHS Compliant 2W, 500-1000MHz, 28V Package Outline Features • N-Channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • Common source configuration • Lower noise floor • Applications Broadband linear operation 500 MHz to 1400 MHz ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Units Drain-Source Voltage V 65 V DS Gate-Source Voltage V 20 V GS Drain-Source Current I 0.7 A DS Power Dissipation P 8 W D Junction Temperature T 200 °C J LETTER MILLIMETERS INCHES Storage Temperature T -55 to +150 °C STG DIM MIN MAX MIN MAX Thermal Resistance θ 21.8 °C/W A 20.70 20.96 .815 .825 JC B 14.35 14.61 .565 .575 TYPICAL DEVICE IMPEDANCE C 13.72 14.22 .540 .560 F (MHz) Z (Ω) Z (Ω) IN LOAD D 6.27 6.53 .247 .257 500 10.0 - j41.5 40.0 +j53.0 E 6.22 6.48 .245 .255 1000 4.2 - j12.0 11.85 + j33.0 F 6.22 6.48 .245 .255 1400 3.5 - j1.0 7.5 + j23.3 G 1.14 1.40 .045 .055 V = 28V, I = 25mA, P = 2.0 W DD DQ OUT H 2.92 3.18 .115 .125 J 1.40 1.65 .055 .065 Z is the series equivalent input impedance of the device IN K 1.96 2.46 .077 .097 from gate to source. L 3.61 4.37 .142 .172 Z is the optimum series equivalent load impedance as M .08 .15 .003 .006 LOAD measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min Max Units Test Conditions Drain-Source Breakdown Voltage BV 65 - V V = 0.0 V , I = 1.0 mA DSS GS DS Drain-Source Leakage Current I - 0.5 mA V = 28.0 V , V = 0.0 V DSS GS GS Gate-Source Leakage Current I - 0.5 µA V = 20.0 V , V = 0.0 V GSS GS DS Gate Threshold Voltage V 2.0 6.0 V V = 10.0 V , I = 5.0 mA GS(TH) DS DS Forward Transconductance G 40 - mS V = 28.0 V , I = 50.0 mA , Δ V = 1.0V, 80 μs Pulse M DS DS GS Input Capacitance C - 3.5 pF V = 28.0 V , F = 1.0 MHz ISS DS Output Capacitance - 3.75 pF V = 28.0 V , F = 1.0 MHz C DS OSS Reverse Capacitance C - 1.2 pF V = 28.0 V , F = 1.0 MHz RSS DS Power Gain G 10 - dB V = 28.0 V, I = 25 mA, P = 2.0 W F =1.0 GHz P DD DQ OUT Drain Efficiency ŋ 40 - % V = 28.0 V, I = 25 mA, P = 2.0 W F =1.0 GHz D DD DQ OUT Load Mismatch Tolerance VSWR-T - 20:1 - V = 28.0 V, I = 25 mA, P = 2.0 W F =1.0 GHz DD DQ OUT 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. LF2802A RF Power MOSFET Transistor M/A-COM Products Released; RoHS Compliant 2W, 500-1000MHz, 28V Typical Broadband Performance Curves POWER OUTPUT VOLTAGE CAPACITANCES VOLTAGE VS VS F =1.0GHz P =2.0 W I =25 mA F =1.0MHz IN DQ 5 3 4 C OSS 2 3 C ISS 2 1 1 C RSS 0 0 5 10 20 15 25 35 30 5 15 10 20 30 25 V (v) V (V) PS DS EFFICIENCY FREQUENCY VS GAIN FREQUENCY VS V =28 V I =25.0 mA P =2.0 W DD DQ out V =28 V I =25.0 mA P =2.0 W DD DQ OUT 48 20 15 45 42 10 39 5 36 0 500 750 1250 1000 1400 500 1000 700 1400 FREQUENCY (MHz) FREQUENCY (MHz) POWER OUTPUT POWER INPUT VS V =28 V I =25.0 mA DD DQ 4 1000 MHz 3 500MHz 1400 MHz 2 1 0 0 0.05 0.2 0.1 0.5 0.3 0.4 POWER INPUT (W) 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. GAIN (dB) CAPACITANCE (pF) POWER OUTPUT (W) POWER OUTPUT (W) EFFICIENCY (%) LF2802A RF Power MOSFET Transistor M/A-COM Products Released; RoHS Compliant 2W, 500-1000MHz, 28V TEST FIXTURE CIRCUIT DIMENSIONS TEST FIXTURE ASSEMBLY 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.
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