Manufacturers
IXYS VVZB120-12IO1
Description
IXYS VVZB120-12IO1 3-PHASE BRIDGES W/DYNAMIC BRAKIGBT & FRED DIODE
Part Number
VVZB120-12IO1
Price
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Manufacturer
IXYS
Lead Time
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Category
PRODUCTS - V
Features
- Convenient package outline
- Isolation voltage 3600 V~
- Soldering connections for PCB mounting
- Ultrafast freewheel diode
Datasheet
Extracted Text
VVZB 120 V = 1200-1600 V Three Phase Half Controlled RRM I = 120 A Rectifier Bridge dAV with IGBT and Fast Recovery Diode for Braking System V Type RRM V 1200 VVZB 120-12 io1 1400 VVZB 120-14 io1 1600 VVZB 120-16 io1 Symbol Conditions Maximum Ratings Features I T = 80°C, sinusoidal 120° 120 A dAV caseSoldering connections for PCB I /I T = 80°C, per leg 77 A FRMS TRMS case mounting Isolation voltage 3600 V~ I /I T = 25°C, t = 10 ms, V = 0 V 750 A FSM TSM VJ R Ultrafast freewheel diode T = 150°C,t = 10 ms, V = 0 V 670 A VJ R Convenient package outline 2 I t T = 25°C, t = 10 ms, V = 0 V 2810 A VJ R T = 150°C,t = 10 ms, V = 0V 2240 A VJ R Applications (di/dt) T = T repetitive, I = 150 A 150 A/µs cr VJ VJM T f = 50 Hz, t = 200 µs P Drive Inverters with brake system 2 V = / V D 3 DRM I = 0.45 A, non repetitive, I = I /3 500 A/µs G T d(AV) di /dt = 0.45 A/µs G Advantages 2 (dv/dt) T = T ; V = / V 1000 V/µs cr VJ VJM DR 3 DRM 2 functions in one package R = �; method 1 (linear voltage rise) GK No external isolation P T = T t =30µs 10 WEasy to mount with two screws GM VJ VJM P I = I /3 t = 300µs 5 WSuitable for wave soldering T d(AV) P t =10 ms 1 WHigh temperature and power cycling P capability P 0.5 W GAVM V T = 25°C to 150°C 1200 V CES VJ V Continuous � 20 V GE I T = 25°C, DC 78 A C25 case I T = 80°C, DC 52 A C80 case I t = Pulse width limited by T 140 A CM p VJM P T = 80°C 222 W tot case V 1200 V RRM I T = 80°C, rectangular d�= 0.5 27 A F(AV) case I T = 80°C, rectangular d = 0.5 38 A F(RMS) case I T = 80°C, t = 10 µs, f = 5 kHz tbd A FRM case P I T = 45°C, t = 10 ms 200 A FSM VJ T = 150°C,t = 10 ms 180 A VJ P T = 80°C 64 W tot case Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 1 - 3 Fast Recovery Diode IGBT Rectifier Bridge 031 VVZB 120 Symbol Conditions Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. max. I , I V = V /V , 0.3 mA R D R RRM DRM V = V /V , T = 150°C 5 mA R RRM DRM VJ V , V I = 100 A, 1.47 V F T F V For power-loss calculations only 0.85 V T0 r T = 150°C 5 m� T VJ V V = 6 V; T = 25°C 1.5 V GT D VJ T = -40°C 1.6 V VJ I V = 6 V; T = 25°C 100 mA GT D VJ T = -40°C 200 mA VJ 2 V T = T ;V = / V 0.2 V GD VJ VJM D 3 DRM 2 I T = T ;V = / V 10 mA GD VJ VJM D 3 DRM I V = 6 V; t = 30 µs 450 mA L D G di /dt = 0.45 A/µs; I = 0.45 A G G I T = T ; V = 6 V; R = � 200 mA H VJ VJM D GK t V = ½ V 2µs gd D DRM di /dt = 0.45 A/µs; I = 0.45 A G G 2 t T = T ; V = 100 V; V = / V ; t = 200 µs 150µs q VJ VJM R D 3 DRM P dv/dt = 10 V/µs; I = 120 A; -di/dt = 10 A/µs T Q T = T 90µC S VJ VJM I -di/dt = 0.64 A/µs; I /I = 50 A 11 A RM T F R per thyristor / diode; sine 120° el. 1 K/W thJC R per thyristor / diode; sine 120° el. 1.3 K/W thJH V V = 0 V, I = 1 mA 1200 V BR(CES) GS C V I = 10 mA 5 8 V GE(th) C I V = � 20 V 500 nA GES GE I V = 0.8 V 0.5 mA CES CE CES V = 0.8 V ,T = 150°C 3 mA CE CES VJ V V = 15 V, I = 50 A 3.35 V CEsat GE C t V = 15 V, V = 0.6 V , T = 125°C, 10µs SC GE CE CES VJ (SCSOA) R = 11 �, non repetitive G RBSOA V = 15 V, V = 0.8 V , T = 125°C, 100 A GE CE CES VJ R = 11 �, Clamped Inductive load, L = 100 µH G C V = 25 V, f = 1 MHz, V = 0 V 9 nF ies CE GE t 65 ns d(on) t 200 ns V = 0.6 V , I = 25 A d(off) CE CES C t tbd ns ri V = 15 V, R = 11 � GE G t tbd ns fi Inductive load; L = 100 µH E 4.1 mJ on T = 125°C VJ E 5.7 mJ off R 0.32 K/W thJC R 0.45 K/W thJH © 2000 IXYS All rights reserved 2 - 3 IGBT Rectifier Bridge VVZB 120 Symbol Conditions Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. max. I V = V , T = 25°C 0.75 mA R R RRM VJ V = 0.8 V ,T = 150°C 3 7 mA R RRM VJ V I = 30 A, T = 25°C 2.55 V F F VJ V For power-loss calculations only 1.65 V T0 r T = 150°C 18.2 m� T VJ I I = 30 A, -di /dt = 240 A/µs 16 18 A RM F F V = 100 V R t I = 1 A, -di /dt = 100 A/µs 40 60 ns rr F F V = 30 V R R 1.1 K/W thJC R 1.5 K/W thJH Common Specification Maximum Ratings T -40...+150 °C VJ T 150 °C VJM T -40...+125 °C stg V 50/60 Hz t = 1 min 3000 V~ ISOL I � 1 mA t = 1 s 3600 V~ ISOL M Mounting torque (M5) 2-2.5 Nm d (10-32 unf) 18-22 lb.in. Weight typ. 80 g d Creep distance on surface 12.7 mm S d Strike distance in air 11 mm A 2 a Maximum allowable acceleration 50 m/s R Thermistor 2.1 k� 25 B 3560 K 25/100 Dimensions in mm (1 mm = 0.0394") © 2000 IXYS All rights reserved 3 - 3 Module Fast Recovery Diode
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When I can't find an obsolete part, I first call GID and they'll come up with my parts every time. Great customer service and follow up as well. Scott emails me from time to time to touch base and see if we're having trouble finding something.....which is often with our 25 yr old equipment.
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