DS 110 DSI 110 DSA 110 DSAI 110 Rectifier Diodes V = 800 - 1800 V RRM Avalanche Diodes I = 250 A F(RMS) I = 160 A F(AV)M DO-205 AC V V � V Anode Cathode RSM (BR)min RRM C A V V V on stud on stud DS DSI DSA DSAI 900 - 800 DS 110-08F DSI 110-08F A C 1300 - 1200 DS 110-12F DSI 110-12F 1300 1300 1200 DSA 110-12F DSAI 110-12F 110-16F DSAI 110-16F 1700 1750 1600 DSA 1900 1950 1800 DSA 110-18F DSAI 110-18F � Only for Avalanche Diodes A = Anode SymbolTest Conditions Maximum Ratings C = Cathode M12 I T = T 250 A F(RMS) (vj) (vj)m T = 100°C; 180° sine 160 A Features I F(AV)M case � International standard package, DSA(I) types, T = T , t = 10 μs35kW P RSM (vj) (vj)m p JEDEC DO-205 AC (~DO30) � Planar glassivated chips T = 45°C; t = 10 ms (50 Hz), sine 3150 A I FSM (vj) V = 0 t = 8.3 ms (60 Hz), sine 3380 A R Applications T = T t = 10 ms (50 Hz), sine 2800 A (vj) (vj)m � High power rectifiers = 0 t = 8.3 ms (60 Hz), sine 3000 A V R � DC supplies 2 2 � Field supply for DC motors t T = 45°C t = 10 ms (50 Hz), sine 49 600 A s I (vj) 2 � Power supplies V = 0 t = 8.3 ms (60 Hz), sine 48 000 A s R 2 T = T t = 10 ms (50 Hz), sine 39 200 A s (vj) (vj)m Advantages 2 V = 0 t = 8.3 ms (60 Hz), sine 37 800 A s R � Space and weight savings � T -40...+180 °C Simple mounting (vj) � T 180 °C Improved temperature and power (vj)m T -40...+180 °C cycling stg � Reduced protection circuits M Mounting torque 16-20 Nm d 142-177 lb.in. Dimensions in mm (1 mm Weight 130 g = 0.0394") SymbolTest ConditionsCharacteristic Values I T = T ; V = V ≤ 10 mA R (vj) (vj)m R RRM V I = 500 A; T = 25°C ≤ 1.4 V F F (vj) V For power-loss calculations only 0.85 V T0 r T = T 1.1 mΩ T (vj) (vj)m R DC current 0.35 K/W thJC 180° sine 0.39 K/W R DC current 0.45 K/W thJH d Creepage distance on surface 4.25 mm S d Strike distance through air 4.25 mm A 2 a Max. allowable acceleration 100 m/s Data according to IEC 747-2 IXYS reserves the right to change limits, test conditions and dimensions IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation IXYS Semiconductor 3540 Bassett Street, Santa Clara,CA 95054 Edisonstr. 15, D-68623 Lampertheim, Germany Tel: 408-982-0700 Fax: 408-496-0670 Tel: +49-6206-5030 Fax: +49-6206-503629 DS 110 DSI 110 DSA 110 DSAI 110 5 600 2000 10 50Hz, 80%⋅V V = 0 V typ. lim. R RRM 2 A A A s 500 T = 45°C 6 (vj) 1500 I F 2 I t I 400 FSM T = 45°C (vj) 4 T = 180°C (vj) 300 1000 T = 25°C T = 180°C (vj) (vj) T = 180°C (vj) 200 2 500 100 4 0 0 10 -3 -2 -1 0 0.0 0.5 1.0 1.5 V 2.0 10 10 10 s 1011 23 4567 ms890 V t t F 2 Fig. 1 Forward characteristics Fig. 2 Surge overload current Fig. 3 I t versus time (1-10 ms) I : Crest value, t: duration FSM 300 200 W A R : thJA P 0.36 K/W F 150 0.7 K/W I 200 F(AV)M 1.3 K/W 100 100 DC 180° sin 50 120° 60° 30° 0 0 0 50 100 150 A 20 0 00 20 40 60 80 100 120 140 1°C 60 180 0 40 80 120 160 °C 200 T T I amb F(AV)M case Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case temperature 180° sine 0.8 R for various conduction angles d: thJH K/W 30° (K/W) dR thJH 60° 120° 0.6 DC 0.45 180° Z 180° 0.516 thJH DC 120° 0.567 60° 0.660 0.4 30° 0.733 Constants for Z calculation: thJH 0.2 iR (K/W) t (s) thi i 1 0.06713 0.003 2 0.06242 0.094 3 0.22045 3.846 0.0 -3 -2 -1 0 1 2 3 4 10 10 10 10 10 10 10 s 10 4 0.10 3.2 t Fig. 6 Transient thermal impedance junction to heatsink IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025