DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 S1 series SMA controlled avalanche rectifiers Product specification 2000 Feb 14 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series FEATURES DESCRIPTION • Glass passivated DO-214AC surface mountable package with glass passivated chip. • High maximum operating temperature The well-defined void-free case is of a transfer-moulded • Ideal for surface mount automotive applications thermo-setting plastic. The small rectangular package has • Low leakage current two J bent leads. • Excellent stability • Guaranteed avalanche energy absorption capability • UL 94V-O classified plastic package cathode olumns band • Shipped in 12 mm embossed tape ka • Marking: cathode, date code, type code • Easy pick and place. Top view Side view MSA474 Fig.1 Simplified outline (DO-214AC) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V repetitive peak reverse voltage RRM S1A − 50 V S1B − 100 V S1D − 200 V S1G − 400 V S1J − 600 V S1K − 800 V S1M − 1000 V V continuous reverse voltage R S1A − 50 V S1B − 100 V S1D − 200 V S1G − 400 V S1J − 600 V S1K − 800 V S1M − 1000 V 2000 Feb 14 2 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V root mean square voltage RMS S1A − 35 V S1B − 70 V S1D − 140 V S1G − 280 V S1J − 420 V S1K − 560 V S1M − 700 V I average forward current averaged over any 20 ms period; − 1A F(AV) T = 110 °C; see Fig.2 tp I non-repetitive peak forward current t = 8.3 ms half sine wave; FSM T =25 °C prior to surge; j S1A to S1J − 30 A V =V R RRMmax S1K and S1M − 25 A T storage temperature −65 +175 °C stg T junction temperature See Fig.3 −65 +175 °C j ELECTRICAL CHARACTERISTICS T =25 °C unless otherwise specified. j SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V forward voltage I = 1 A; see Fig.4 − 1.1 V F F I reverse current V =V ; see Fig.5 R R RRMmax S1A to S1J − 1 μA S1K and S1M − 5 μA V =V ; T = 165 °C; see Fig.5 − 50 μA R RRMmax j t reverse recovery time when switched from I = 0.5 A to I =1A; 1 −μs rr F R measured at I = 0.25 A; see Fig.9 R C diode capacitance V = 4 V; f = 1 MHz; see Fig.6 8 − pF d R THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to tie-point; see Fig.7 27 K/W th j-tp R thermal resistance from junction to ambient note 1 100 K/W th j-a note 2 150 K/W Notes 1. Device mounted on Al O printed-circuit board, 0.7 mm thick; thickness of copper ≥35 μm. 2 3 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 μm. For more information please refer to the ‘General Part of associated Handbook’. 2000 Feb 14 3 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series GRAPHICAL DATA MCD822 MGD483 2 200 handbook, halfpage handbook, halfpage T I j F(AV) (°C) (A) 160 1.5 120 1 80 0.5 DG J K M 40 0 0 0 40 80 120 160 200 0 400 800 1200 V (V) T (°C) R tp V =V ; δ = 0.5; a = 1.57. Device mounted as shown in Fig.8. R RRMmax Solid line: Al O printed-circuit board. 2 3 Dotted line: epoxy printed-circuit board. Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to Fig.3 Maximum permissible junction temperature reverse leakage). as a function of reverse voltage. MCD795 MCD802 2 2 10 10 handbook, halfpage handbook, halfpage I I R F T = 165 °C j (μA) (A) 10 10 1 1 −1 −1 10 10 T = 25 °C j −2 −2 10 10 −3 −3 10 10 0 0.5 1 1.5 2 2.5 0 20 40 60 80 100 V (V) F V (%V ) R Rmax T =25 °C. j Fig.4 Forward current as a function of forward Fig.5 Reverse current as a function of reverse voltage; typical values. voltage; typical values. 2000 Feb 14 4 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series MCD801 MBL120 2 2 10 10 handbook, halfpage handbook, halfpage Z C th j-tp d (K/W) (pF) 10 10 1 1 −2 −1 2 2 3 4 10 10 1 10 10 110 10 10 10 t (ms) V (V) p R f = 1 MHz; T =25 °C. j Fig.6 Diode capacitance as a function of reverse Fig.7 Transient thermal impedance as a function voltage; typical values. of pulse width. 50 4.5 50 2.5 1.25 MSB213 Dimensions in mm. Material: AL O or epoxy-glass. 2 3 Fig.8 Printed-circuit board for surface mounting. 2000 Feb 14 5 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series I handbook, full pagewidth F DUT (A) + 0.5 t rr 25 V 10 Ω 1 Ω 50 Ω 0 t 0.25 0.5 I R (A) MAM057 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; t ≤ 7 ns. r Source impedance: 50 Ω; t ≤ 15 ns. r Fig.9 Test circuit and reverse recovery time waveform and definition. 2000 Feb 14 6 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series PACKAGE OUTLINE Transfer-moulded thermo-setting plastic small rectangular surface mounted package; 2 connectors SOD124 H D A A 1 c Q E b (1) 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A b cD E H Q 1 2.3 1.6 4.5 2.8 5.5 3.3 mm 0.05 0.2 2.0 1.4 4.3 2.4 5.1 2.7 Note 1. The marking band indicates the cathode. REFERENCES EUROPEAN OUTLINE ISSUE DATE PROJECTION VERSION IEC JEDEC EIAJ SOD124 DO-214AC 99-10-22 2000 Feb 14 7 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2000 Feb 14 8 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series NOTES 2000 Feb 14 9 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series NOTES 2000 Feb 14 10 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series NOTES 2000 Feb 14 11 Philips Semiconductors – a worldwide company Argentina: see South America Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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