T40HF..., T70HF..., T85HF..., T110HF... Series Vishay Semiconductors Power Rectifier Diodes (T-Modules), 40 A to 110 A FEATURES • Electrically isolated base plate • Types up to 1200 V RRM • 3500 V isolating voltage RMS • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL E78996 approved • Compliant to RoHS directive 2002/95/EC D-55 • Designed and qualified for industrial level DESCRIPTION These series of T-modules use standard recovery power PRODUCT SUMMARY rectifier diodes. The semiconductors are electrically isolated I 40 A to 110 A from the metal base, allowing common heatsink and F(AV) compact assembly to be built. Type Modules - Diode, High Voltage Applications include power supplies, battery charges, welders, motor controls and general industrial current rectification. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS T40HF T70HF T85HF T110HF UNITS 40 70 85 110 A I F(AV) T 85 85 85 85 °C C I 63 110 134 173 A F(RMS) 50 Hz 570 1200 1700 2000 I A FSM 60 Hz 600 1250 1800 2100 50 Hz 1630 7100 14 500 20 500 2 2 I t A s 60 Hz 1500 6450 13 500 18 600 2 2 I √t 16 300 70 700 148 700 204 300 A √s V 100 to 1200 V RRM T - 40 to 150 °C J Document Number: 93587 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 20-May-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 T40HF..., T70HF..., T85HF..., T110HF... Series Power Rectifier Diodes Vishay Semiconductors (T-Modules), 40 A to 110 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM RSM RRM TYPE VOLTAGE PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T = 25 °C J NUMBER CODE V V μA 10 100 150 20 200 300 T40HF... 40 400 500 T70HF... 60 600 700 100 T85HF... 80 800 900 T110HF... 100 1000 1100 120 1200 1300 FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS T40HFT70HFT85HFT110HFUNITS 40 70 85 110 A Maximum average forward current I 180° conduction, half sine wave F(AV) at case temperature 85 85 85 85 °C Maximum RMS forward current I 63110134173A F(RMS) t = 10 ms 570 1200 1700 2000 No voltage Maximum peak, one-cycle reapplied t = 8.3 ms 600 1250 1800 2100 forward, non-repetitive I A FSM t = 10 ms 480 1000 1450 1700 100 % V surge current RRM Sinusoidal reapplied t = 8.3 ms 500 1050 1500 1780 half wave, initial T = J t = 10 ms 1630 7100 14 500 20 500 No voltage T maximum J reapplied t = 8.3 ms 1500 6450 13 500 18 600 2 2 2 Maximum I t for fusing I t A s t = 10 ms 1150 5000 10 500 14 500 100 % V RRM reapplied t = 8.3 ms 1050 4570 9600 13 200 2 2 2 Maximum I √t for fusing I √t t = 0.1 ms to 10 ms, no voltage reapplied 16 300 70 700 148 700 204 300 A √s Low level value of (16.7 % x π x I < I < π x I ), F(AV) F(AV) V 0.66 0.76 0.68 0.68 F(TO)1 threshold voltage T maximum J V High level value of V (I > π x I ), T maximum 0.84 0.95 0.90 0.86 F(TO)2 F(AV) J threshold voltage Low level value of (16.7 % x π x I < I < π x I ), F(AV) F(AV) r 4.3 2.4 1.76 1.56 f1 forward slope resistance T maximum J mΩ High level value of r (I > π x I ), T maximum 3.1 1.7 1.08 1.12 f2 F(AV) J forward slope resistance I = π x I , T = 25 °C, FM F(AV) J Maximum forward voltage drop V t = 400 μs square pulse 1.30 1.35 1.27 1.35 V FM p 2 Average power = V x I + r x (I ) F(TO) F(AV) f F(RMS) www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93587 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 20-May-10 T40HF..., T70HF..., T85HF..., T110HF... Series Power Rectifier Diodes Vishay Semiconductors (T-Modules), 40 A to 110 A BLOCKING PARAMETER SYMBOL TEST CONDITIONS T40HF T70HF T85HF T110HF UNITS Maximum peak reverse I T = 150 °C 15 15 20 20 mA RRM J leakage current 50 Hz, circuit to base, all terminals shorted RMS isolation voltage V 3500 3500 3500 3500 V ISOL T = 25 °C, t = 1 s J THERMAL AND MECHANICAL SPECIFICATIONS VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS T40HF T70HF T85HF T110HF Maximum junction operating T , T - 40 to 150 °C J Stg and storage temperature range Maximum thermal resistance, R DC operation 1.36 0.69 0.62 0.47 thJC junction to case per junction K/W Maximum thermal resistance, Mounting surface smooth, flat R 0.2 thCS and greased case to heatsink (1) to heatsink M3.5 mounting screws 1.3 ± 10 % Mounting torque, Non-lubricated Nm ± 10 % threads terminals M5 screw terminals 3 ± 10 % Approximate weight See dimensions - link at the end of datasheet 54 g Case style T-module (D-55) Note (1) A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound ΔR CONDUCTION PER JUNCTION SINUSOIDAL CONDUCTION AT T MAXIMUM RECTANGULAR CONDUCTION AT T MAXIMUM J J DEVICES UNITS 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° T40HF... 0.12 0.14 0.18 0.27 0.46 0.09 0.15 0.20 0.28 0.46 T70HF... 0.09 0.11 0.14 0.20 0.35 0.07 0.11 0.15 0.21 0.35 K/W T85HF... 0.08 0.09 0.12 0.18 0.31 0.06 0.10 0.13 0.19 0.31 T110HF... 0.05 0.07 0.09 0.14 0.23 0.05 0.08 0.10 0.15 0.24 Note • Table shows the increment of thermal resistance R when devices operate at different conduction angles than DC thJC Document Number: 93587 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 20-May-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 e a R = 0.5 K/W - D lt R thSA 1 K/W thSA 1.5 K/W R = 0.5 K/ W - Delta R 2 K/W 1 K/W 3 K/W 1.5 K/W 2 K/ W 5 K/W K 3 /W 7 K/W 10 K/W 5 K/W 7 K/W 10 K/W T40HF..., T70HF..., T85HF..., T110HF... Series Power Rectifier Diodes Vishay Semiconductors (T-Modules), 40 A to 110 A 150 150 T40HF.. Series T40HF.. Series R (DC) = 1.36 K/W 140 140 R (DC) = 1.36 K/W thJC thJC 130 130 120 120 Conduction Period Conduction Angle 110 110 100 100 30° 90 90 30° 60° 60° 90° 90° 80 80 120° 120° 70 70 180° 180° DC 60 60 010 20 30 40 50 0 10 20304050 6070 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 45 180° 40 120° 90° 35 60° 30° 30 RMS Limit 25 20 15 Conduction Angle 10 T40HF.. Series T = 150°C 5 J 0 0 5 10 15 20 25 30 35 400 255075 100 125 150 Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 3 - Forward Power Loss Characteristics 70 DC 180° 60 120° 90° 50 60° 30° 40 RMS Limit 30 Conduction Period 20 T40HF.. Series 10 T = 150°C J 0 0 1020 30 4050 60 702 0 5 50 75 100 125 150 Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 4 - Forward Power Loss Characteristics www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93587 4 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 20-May-10 Maximum Allowable Case Temperature (°C) Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) t R = 0.3 K/ W - Del a R t S h A 0.5 K/W 0.7 K/W 1 K/ W . W 1 5 K/ 2 K/W 3 K/W 5 K/W 7 / W K T40HF..., T70HF..., T85HF..., T110HF... Series Power Rectifier Diodes Vishay Semiconductors (T-Modules), 40 A to 110 A 150 550 At Any Rated Load Condition And With T70HF.. Series Rated V Applied Following Surge. 140 R (DC) = 0.69 K/W RRM 500 thJC Initial T = 150°C J 130 @ 60 Hz 0.0083 s 450 @ 50 Hz 0.0100 s 120 400 110 Conduction Angle 350 100 300 90 30° 60° 250 80 90° 120° 200 T40HF.. Series 70 180° 150 60 0 1020 304050 6070 80 110 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Average Forward Current (A) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 7 - Current Ratings Characteristics 150 600 Maximum Non Repetitive S urge Current T70HF.. Series 550 Versus Pulse Train Duration. 140 R (DC) = 0.69 K/W thJC Initial T = 150°C J 500 130 No Voltage Reapplied Rated V Reapplied 450 RR M 120 400 Conduction Period 110 350 100 300 90 30° 250 60° 80 90° 200 120° T40HF.. Series 70 150 180° DC 60 100 020 40 60 80 100 120 0.01 0.1 1 Pulse Train Duration (s) Average Forward Current (A) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 8 - Current Ratings Characteristics 90 180° 80 120° 90° 70 60° 30° 60 RMS Limit 50 40 30 Conduction Angle 20 T70HF.. Series 10 T = 150°C J 0 0 10 20 304050607 00 25 50 75 100 125 150 Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 9 - Forward Power Loss Characteristics Document Number: 93587 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 20-May-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) Maximum Allowable Case T emperature (°C) l R = 0.2 K/ W - De ta R thSA 0.3K/W 0.5K/ W 0.7K/W 1K/ W 1.5K/W K/ 2 W 3 /W K 5K /W T40HF..., T70HF..., T85HF..., T110HF... Series Power Rectifier Diodes Vishay Semiconductors (T-Modules), 40 A to 110 A 120 DC 180° 100 120° 90° 60° 80 30° 60 RMS Limit Conduction Period 40 T70HF.. Series 20 T = 150°C J 0 0 20406080 100 1202 0 5 50 75 100 125 150 Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 10 - Forward Power Loss Characteristics 150 1100 T85HF.. Series At Any Rated Load Condition And With R (DC) = 0.62 K/W Rated V Applied Following Surge. RRM thJC 1000 140 Initial T = 150°C J @ 60 Hz 0.0083 s 900 130 @ 50 Hz 0.0100 s 800 Conduction Angle 120 700 110 30° 60° 600 90° 100 120° 500 180° 90 400 T70HF.. Series 80 300 0 102030405060708090 110 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Average Forward Current (A) Fig. 11 - Maximum Non-Repetitive Surge Current Fig. 13 - Current Ratings Characteristics 1200 150 Maximum Non Repetitive Surge Current T85HF.. S eries 1100 Versus Pulse Train Duration. 140 R (DC) = 0.62 K/W thJC Initial T = 150°C J 1000 130 No Voltage Reapplied Rated V Reapplied 900 RR M 120 800 Conduction Period 110 700 100 600 90 30° 500 60° 80 90° 400 120° T70HF.. Series 70 300 180° DC 60 200 0 20 40 60 80 100 120 140 0.01 0.1 1 Pulse Train Duration (s) Average Forward Current (A) Fig. 12 - Maximum Non-Repetitive Surge Current Fig. 14 - Current Ratings Characteristics www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93587 6 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 20-May-10 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) Maximum Allowable Case T emperature (°C) Maximum Allowable Case Temperature (°C) R = 0.2 K/ W - Delta R 0.3 K/W thSA . /W 0 5 K 0 7 K/W . R = 0.2 K/ W - Delta R S th A 0.3K/W 1 K/ W 0.5K/ W .7K/ W 0 1.5 K/W 1K/ W 2 K/ W 3 W K/ / 1.5K W / 2K W 5 K/ W 3K/W / 7 K W 5K/ W T40HF..., T70HF..., T85HF..., T110HF... Series Power Rectifier Diodes Vishay Semiconductors (T-Modules), 40 A to 110 A 100 180° 90 120° 90° 80 60° 30° 70 60 RMS Limit 50 40 Conduction Angle 30 20 T85HF.. Series T = 150°C J 10 0 0 10 2030 4050 6070 80900 255075 100 125 150 Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 15 - Forward Power Loss Characteristics 140 DC 180° 120 120° 90° 100 60° 30° 80 60 RMS Limit Conduction Period 40 T85HF.. Series 20 T = 150°C J 0 0 20406080 100 120 14 00 25 50 75 100 125 150 Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 16 - Forward Power Loss Characteristics 1600 1800 Maximum Non Repetitive Surge Current At Any Rated Load Condition And With Versus Pulse Train Duration. Rated V Applied Following Surge. RR M 1600 Initial T = 150°C Initial T = 150°C 1400 J J No Voltage Reapplied @ 60 Hz 0.0083 s 1400 Rated V Reapplied @ 50 Hz 0.0100 s RR M 1200 1200 1000 1000 800 800 600 600 T85HF.. Series T85HF.. Series 400 400 110 100 0.01 0.1 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 17 - Maximum Non-Repetitive Surge Current Fig. 18 - Maximum Non-Repetitive Surge Current Document Number: 93587 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 20-May-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 7 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W) Peak Half Sine Wave Forward Current (A) thSA elta R R = 0.2 K/ W - D . /W 0 3 K thSA R = 0.2 K/W - Delta R 0.5 K/W 0.7 K/ W 0.3 K/W 1 K/W 0.5 K/ W .7 K/ W 0 1.5 K/ W 1 K/W 2 K/W .5 / W 1 K 3 K/ W 5 K/W 2 K/W 3 K/ W 5 K/ W T40HF..., T70HF..., T85HF..., T110HF... Series Power Rectifier Diodes Vishay Semiconductors (T-Modules), 40 A to 110 A 150 150 T110HF.. Series T110HF.. Series R (DC) = 0.47 K/W R (DC) = 0.47 K/W 140 140 thJC thJC 130 130 120 120 Conduction Angle Conduction Period 110 110 100 100 90 90 30° 30° 60° 60° 90° 90° 80 80 120° 120° 70 70 180° 180° DC 60 60 0 20 40 60 80 100 120 140 160 180 0 204060 80 100 120 Average Forward Current (A) Average Forward Current (A) Fig. 19 - Current Ratings Characteristics Fig. 20 - Current Ratings Characteristics 130 180° 120 120° 110 90° 100 60° 30° 90 80 RMS Limit 70 60 50 Conduction Angle 40 30 T110HF.. Series 20 T = 150°C J 10 0 0 204060 80 100 1202 0 5 50 75 100 125 150 Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 21 - Forward Power Loss Characteristics 180 DC 160 180° 120° 140 90° 60° 120 30° 100 80 RMS Limit 60 Conduction Period 40 T110HF.. Series T = 150°C 20 J 0 0 20406080 10012014016018 00 25 50 75 100 125 150 Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 22 - Forward Power Loss Characteristics www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93587 8 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 20-May-10 Maximum Allowable Case Temperature (°C) Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) T40HF..., T70HF..., T85HF..., T110HF... Series Power Rectifier Diodes Vishay Semiconductors (T-Modules), 40 A to 110 A 1800 1000 At Any Rated Load Condition And With Rated V Applied Following Surge. RR M 1600 Initial T = 150°C J @ 60 Hz 0.0083 s 1400 @ 50 Hz 0.0100 s 100 1200 1000 T = 25°C J 10 T = 150°C J 800 600 T110HF.. Series T70HF.. Series 1 400 00.5 1 1.5 2 2.5 3 110 100 Instantaneous Forward Voltage (V) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 23 - Maximum Non-Repetitive Surge Current Fig. 26 - Forward Voltage Drop Characteristics 2000 10000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. 1800 Initial T = 150°C J No Voltage Reapplied 1600 Rated V Reapplied RRM 1000 1400 1200 T = 25°C J 1000 100 T = 150°C J 800 600 T110HF.. Series T85HF.. Series 400 10 0.01 0.1 1 01 2345 Instantaneous Forward Voltage (V) Pulse Train Duration (s) Fig. 24 - Maximum Non-Repetitive Surge Current Fig. 27 - Forward Voltage Drop Characteristics 1000 10000 1000 100 T = 25°C J T = 25°C J T = 150°C 10 100 J T = 150°C J T40HF.. Series T110HF.. Series 1 10 00.5 1 1.5 22.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous Forward Voltage (V) Instantaneous Forward Voltage (V) Fig. 25 - Forward Voltage Drop Characteristics Fig. 28 - Forward Voltage Drop Characteristics Document Number: 93587 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 20-May-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 9 Instantaneous Forward Current (A) Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) Instantaneous Forward Current (A) Instantaneous Forward Current (A) Instantaneous Forward Current (A) T40HF..., T70HF..., T85HF..., T110HF... Series Power Rectifier Diodes Vishay Semiconductors (T-Modules), 40 A to 110 A 10 Steady State Value: T40HF.. Series R = 1.36 K/W thJC R = 0.69 K/W thJC T70HF.. Series R = 0.62 K/W thJC 1 R = 0.47 K/W thJC (DC Operation) T85HF.. Series T110HF.. Series 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 29 - Thermal Impedance Z Characteristics thJC ORDERING INFORMATION TABLE Device code T 110 HF 120 1324 1 - Module type - Current rating 2 3 - Circuit configuration (see Circuit Configuration table) - Voltage code x 10 = V 4 RRM CIRCUIT CONFIGURATION CIRCUIT CIRCUIT DESCRIPTION CIRCUIT DRAWING CONFIGURATION CODE +- Single diode HF LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95313 www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93587 10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 20-May-10 Transient Thermal Impedance Z (K/W) thJC Outline Dimensions Vishay Semiconductors D-55 T-Module Diode Standard and Fast Recovery DIMENSIONS in millimeters (inches) 25 ± 1 23.5 (0.93) 3 (0.12) 41 (1.61) MAX. 18 11 (0.71) (0.43) + 15 (0.59) 3.9 (0.15) 8 (0.31) 27 (1.06) - M5 30 (1.18) Document Number: 95313 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 01-Jul-08 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 Document Number: 91000 1