VS-HFA16TA60CPbF Vishay Semiconductors ® HEXFRED Ultrafast Soft Recovery Diode, 2 x 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low I and Q RRM rr • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level BENEFITS • Reduced RFI and EMI • Reduced power loss in diode and switching transistor Base • Higher frequency operation common cathode • Reduced snubbing 2 • Reduced parts count DESCRIPTION VS-HFA16TA60CPbF is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial 2 Common construction and advanced processing techniques it cathode features a superb combination of characteristics which Anode Anode 13 result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 8 A per TO-220AB leg continuous current, the VS-HFA16TA60CPbF is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, ® the HEXFRED product line features extremely low values of peak recovery current (I ) and does not exhibit any PRODUCT SUMMARY RRM tendency to “snap-off” during the t portion of recovery. The b Package TO-220AB HEXFRED features combine to offer designers a rectifier I 2 x 8 A with lower noise and significantly lower switching losses in F(AV) both the diode and the switching transistor. These V 600 V R HEXFRED advantages can help to significantly reduce V at I 1.7 V F F snubbing, component count and heatsink sizes. The HEXFRED VS-HFA16TA60CPbF is ideally suited for t (typ.) 18 ns rr applications in power supplies and power conversion T max. 150 °C J systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is Diode variation Common cathode needed. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Cathode to anode voltage V 600 V R per leg 8 Maximum continuous forward current I T = 100 °C F C per device 16 A Single pulse forward current I 60 FSM Maximum repetitive forward current I 24 FRM T = 25 °C 36 C Maximum power dissipation P W D T = 100 °C 14 C Operating junction and storage temperature range T , T - 55 to + 150 °C J Stg Document Number: 94058 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 24-May-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16TA60CPbF ® HEXFRED Vishay Semiconductors Ultrafast Soft Recovery Diode, 2 x 8 A ELECTRICAL SPECIFICATIONS PER LEG (T = 25 °C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode V I = 100 μA 600 - - BR R breakdown voltage I = 8 A -1.4 1.7 F V Maximum forward voltage V I = 16 A See fig. 1 - 1.7 2.1 FM F I = 8 A, T = 125 °C - 1.4 1.7 F J V = V rated -0.3 5.0 Maximum reverse R R I See fig. 2 μA RM leakage current T = 125 °C, V = 0.8 x V rated - 100 500 J R R Junction capacitance C V = 200 V See fig. 3 - 10 25 pF T R Measured lead to lead 5 mm from package Series inductance L -8.0 - nH S body DYNAMIC RECOVERY CHARACTERISTICS PER LEG (T = 25 °C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS t I = 1.0 A, dI /dt = 200 A/μs, V = 30 V - 18 - rr F F R Reverse recovery time t T = 25 °C -37 55 ns rr1 J See fig. 5 and 10 t T = 125 °C - 55 90 rr2 J I T = 25 °C - 3.5 5.0 Peak recovery current RRM1 J A See fig. 6 I T = 125 °C I = 8.0 A - 4.5 8.0 RRM2 J F dI /dt = 200 A/μs F Q T = 25 °C - 65 138 Reverse recovery charge rr1 J nC V = 200 V R See fig. 7 Q T = 125 °C - 124 360 rr2 J Peak rate of fall recovery dI /dt1 T = 25 °C - 240 - (rec)M J current during t A/μs b dI /dt2 T = 125 °C - 210 - See fig. 8 (rec)M J THERMAL - MECHANICAL SPECIFICATIONS PER LEG PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature T 0.063" from case (1.6 mm) for 10 s - - 300 °C lead Junction to case, -- 3.5 single leg conducting R thJC Junction to case, - - 1.75 both legs conducting K/W Thermal resistance, R Typical socket mount - - 80 thJA junction to ambient Thermal resistance, R Mounting surface, flat, smooth and greased - 0.5 - thCS case to heatsink -2.0 - g Weight -0.07 - oz. 6.0 12 kgf · cm Mounting torque - (5.0) (10) (lbf · in) Marking device Case style TO-220AB HFA16TA60C www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94058 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 24-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16TA60CPbF ® HEXFRED Vishay Semiconductors Ultrafast Soft Recovery Diode, 2 x 8 A 1000 100 T = 150 °C J 100 T = 125 °C J T = 150 °C 10 10 J T = 125 °C J T = 25 °C J 1 0.1 1 T = 25 °C J 0.01 A 0.001 0.1 0 100 300 200 400 500 600 0.4 1.2 1.6 2.0 2.4 2.8 3.2 0.8 94058_02 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R 94058_01 FM Fig. 2 - Typical Reverse Current vs. Fig. 1 - Maximum Forward Voltage Drop vs. Reverse Voltage (Per Leg) Instantaneous Forward Current (Per Leg) A 100 T = 25 °C J 10 1 1 10 100 1000 94058_03 V - Reverse Voltage (V) R Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 1 P DM D = 0.50 D = 0.20 t 0.1 1 D = 0.10 D = 0.05 t 2 Single pulse D = 0.02 Notes: (thermal response) D = 0.01 1. Duty factor D = t /t 1 2 2. Peak T = P x Z + T J DM thJC C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t - Rectangular Pulse Duration (s) 1 Fig. 4 - Maximum Thermal Impedance Z Characteristics (Per Leg) thJC Document Number: 94058 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 24-May-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 I - Instantaneous Forward Current (A) F Z - Thermal Response thJC C - Junction Capacitance (pF) T I - Reverse Current (µA) R VS-HFA16TA60CPbF ® HEXFRED Vishay Semiconductors Ultrafast Soft Recovery Diode, 2 x 8 A 80 500 I = 16 A F V = 200 V R I = 8.0 A T = 125 °C F J I = 4.0 A T = 25 °C F J 400 I = 16 A 60 F I = 8.0 A F I = 4.0 A F 300 40 200 20 V = 200 V 100 R T = 125 °C J T = 25 °C J 0 0 100 1000 100 1000 94058_05 dI /dt (A/µs) 94058_07 dI /dt (A/µs) F F Fig. 5 - Typical Reverse Recovery Time vs. dI /dt Fig. 7 - Typical Stored Charge vs. dI /dt F F (Per Leg) (Per Leg) 10 000 20 V = 200 V R T = 125 °C J T = 25 °C J 16 I = 16 A F I = 8.0 A I = 16 A F F I = 4.0 A I = 8.0 A F F 12 I = 4.0 A F 1000 8 4 V = 200 V R T = 125 °C J T = 25 °C J 100 0 100 1000 100 1000 dI /dt (A/µs) 94058_06 dI /dt (A/µs) F F Fig. 6 - Typical Recovery Current vs. dI /dt Fig. 8 - Typical dI /dt vs. dI /dt F (rec)M F (Per Leg) (Per Leg) www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94058 4 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 24-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 t (nS) I (A) rr rr Q (nC) rr dI /dt (A/µs) (rec)M VS-HFA16TA60CPbF ® HEXFRED Vishay Semiconductors Ultrafast Soft Recovery Diode, 2 x 8 A V = 200 V R 0.01 Ω L = 70 μH D.U.T. D dI /dt F adjust G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) t rr I F t t a b 0 (4) Q rr (2) I 0.5 I RRM RRM (5) dI /dt (rec)M 0.75 I RRM dI /dt (1) F (4) Q - area under curve defined by t (1) dI /dt - rate of change of current rr rr F and I through zero crossing RRM t x I rr RRM (2) I - peak reverse recovery current Q = RRM rr 2 (3) t - reverse recovery time measured rr (5) dI /dt - peak rate of change of (rec)M from zero crossing point of negative current during t portion of t b rr going I to point where a line passing F through 0.75 I and 0.50 I RRM RRM extrapolated to zero current. Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94058 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 24-May-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16TA60CPbF ® HEXFRED Vishay Semiconductors Ultrafast Soft Recovery Diode, 2 x 8 A ORDERING INFORMATION TABLE Device code VS- HF A 16 TA 60 C PbF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product ® 2 - HEXFRED family 3 - Electron irradiated 4 - Current rating (16 = 16 A) 4 5 - Package: 4 TA = TO-220AB - Voltage rating (60 = 600 V) 6 7 - Circuit configuration: C = Common cathode - PbF = Lead (Pb)-free 8 Tube standard pack quantity: 50 pieces LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95222 Part marking information www.vishay.com/doc?95225 www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94058 6 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 24-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches B Seating A (6) plane Thermal pad E Ø P A A (E) 0.014 M B A M E2 (7) A1 13 Q 2 (6) D D (H1) H1 (2) L1 (7) C C (6) D2 D Detail B (6) D1 3 x b 3 x b2 13 2 Detail B C E1 (6) L (b, b2) Base metal Plating View A - A c c1 (4) c A 2 x e A2 (4) e1 b1, b3 Section C - C and D - D 0.015MM B A Lead assignments Lead tip Diodes Conforms to JEDEC outline TO-220AB 1. - Anode/open 2. - Cathode 3. - Anode MILLIMETERS INCHES MILLIMETERS INCHES SYMBOL NOTES SYMBOL NOTES MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 E 10.11 10.51 0.398 0.414 3, 6 A1 1.14 1.40 0.045 0.055 E1 6.86 8.89 0.270 0.350 6 A2 2.56 2.92 0.101 0.115 E2 - 0.76 - 0.030 7 b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105 b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208 b2 1.20 1.73 0.047 0.068 H1 6.09 6.48 0.240 0.255 6, 7 b3 1.14 1.73 0.045 0.068 4 L 13.52 14.02 0.532 0.552 c 0.36 0.61 0.014 0.024 L1 3.32 3.82 0.131 0.150 2 c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147 D 14.85 15.25 0.585 0.600 3 Q 2.60 3.00 0.102 0.118 D1 8.38 9.02 0.330 0.355  90° to 93° 90° to 93° D2 11.68 12.88 0.460 0.507 6 Notes (1) (7) Dimensioning and tolerancing as per ASME Y14.5M-1994 Dimensions E2 x H1 define a zone where stamping and (2) singulation irregularities are allowed Lead dimension and finish uncontrolled in L1 (8) (3) Outline conforms to JEDEC TO-220, except A2 (maximum) and Dimension D, D1 and E do not include mold flash. Mold flash D2 (minimum) where dimensions are derived from the actual shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body package outline (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 08-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1