��������� GA200NS61U High Side Switch Chopper Module IGBT INT-A-PAK TM Ultra-Fast Speed IGBT Features 3 V = 600V Generation 4 IGBT technology CES  UltraFast: Optimized for high operating 4 frequencies 8-40 kHz in hard switching, >200 V = 1.8V CE(on) typ. kHz in resonant mode 5 Very low conduction and switching losses 1 ™ @V = 15V, I = 200A GE C HEXFRED antiparallel diodes with ultra- soft 2 recovery  Industry standard package  UL approved Benefits  Increased operating efficiency  Direct mounting to heatsink  Performance optimized for power conversion: UPS, SMPS, Welding  Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I @ T = 25°C Continuous Collector Current 200 C C I Pulsed Collector Current� 400 A CM I Peak Switching Curren�� 400 LM I Peak Diode Forward Current 400 FM V Gate-to-Emitter Voltage ±20 V GE V RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500 ISOL P @ T = 25°C Maximum Power Dissipation 625 W D C P @ T = 85°C Maximum Power Dissipation 325 D C T Operating Junction Temperature Range -40 to +150 °C J T Storage Temperature Range -40 to +125 STG Thermal / Mechanical Characteristics Parameter Typ. Max. Units R Thermal Resistance, Junction-to-Case - IGBT — 0.20 θJC R Thermal Resistance, Junction-to-Case - Diode — 0.35 °C/W θJC R Thermal Resistance, Case-to-Sink - Module 0.1 — θCS � Mounting Torque, Case-to-Heatsink — 4.0 N m Mounting Torque, Case-to-Terminal 1, 2 & 3� — 3.0 Weight of Module 200 — g www.irf.com 1 �������� GA200NS61U Electrical Characteristics @ T = 25°C (unless otherwise specified) J ����������������������������������������� ���� ���� ���� ����� ����������������� V Collector-to-Emitter Breakdown Voltage 600 —— V = 0V, I = 1mA (BR)CES GE C V Collector-to-Emitter Voltage — 1.8 2.2 V = 15V, I = 200A CE(on) GE C — 1.9 — VV = 15V, I = 200A, T = 125°C GE C J V Gate Threshold Voltage 3.0 — 6.0 I = 1.25mA GE(th) C ΔV /ΔT Temperature Coeff. of Threshold Voltage — -11 — mV/°CV = V , I = 1.25mA GE(th) J CE GE C g Forward Transconductance�� — 175 — SV = 25V, I = 200A fe CE C I Collector-to-Emitter Leaking Current —— 1.0 mA V = 0V, V = 600V CES GE CE —— 10 V = 0V, V = 600V, T = 125°C GE CE J V Diode Forward Voltage - Maximum — 1.6 2.2 V I = 200A, V = 0V FM F GE — 1.7 — I = 200A, V = 0V, T = 125°C F GE J I Gate-to-Emitter Leakage Current —— 250 nA V = ±20V GES GE Dynamic Characteristics - T = 125°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) — 903 1355 V = 400V, V = 15V g CC GE Q Gate - Emitter Charge (turn-on) — 125 188 nC I = 135A ge C Q Gate - Collector Charge (turn-on) — 306 459 T = 25°C gc J t Turn-On Delay Time — 342 — R = 27Ω, R = 0Ω, d(on) G1 G2 t Rise Time — 194 — ns I = 200A r C t Turn-Off Delay Time — 366 — V 360V d(off) CC = t Fall Time — 213 — V = ±15V f GE E Turn-On Switching Energy — 12 — mJ Inductive load on E Turn-Off Switching Energy — 16 — off (1) E Total Switching Energy — 28 39 ts (1) C Input Capacitance — 20068 — V = 0V ies GE C Output Capacitance — 1254 — pF V = 30V oes CC C Reverse Transfer Capacitance — 261—ƒ = 1 MHz res t Diode Reverse Recovery Time — 137 — ns I = 200A rr C I Diode Peak ReverseCurrent — 96 — AR = 27Ω rr G1 Q Diode Recovery Charge — 6731 — µC R = 0Ω rr G2 di M Diode Peak Rate of Fall of Recovery — 5705 — A/µs V 360V (rec) /dt CC = During t di/dt=1227A/µs b 2 www.irf.com GA200NS61U 1000 1000 ° T = 125 C J 100 ° T = 125 C J 100 ° T = 25 C J 10 ° T = 25 C J V = 25V V = 15V GE CE 80µs PULSE WIDTH 80µs PULSE WIDTH 10 1 0.5 1.0 1.5 2.0 2.5 3.0 5.0 6.0 7.0 8.0 9.0 V , Collector-to-Emitter Voltage (V) V , Gate-to-Emitter Voltage (V) CE GE Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics 240 3.0 V = 15V GE 80 us PULSE WIDTH I = A 400 C 200 160 120 2.0 I = A 200 C 80 I = A 100 C 40 0 1.0 25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160 ° T , Case Temperature ( C) T , Junction Temperature ( C) ° C J Fig. 3 - Maximum Collector Current vs. Case Fig. 4- Typical Collector-to-Emitter Voltage vs. Temperature Junction Temperature www.irf.com 3 Maximum DC Collector Current(A) I , Collector-to-Emitter Current (A) C V , Collector-to-Emitter Voltage(V) CE I , Collector-to-Emitter Current (A) C GA200NS61U 40000 20 V = 0V, f = 1MHz V = 400V CC GE C = C + C C SHORTED I = 135A ies ge gc , ce C C = C res gc C = C + C oes ce gc 16 30000 C ies 12 20000 8 C oes 10000 4 C res 0 0 1 10 100 0 200 400 600 800 1000 V , Collector-to-Emitter Voltage (V) CE Q , Total Gate Charge (nC) G Fig. 5 - Typical Capacitance vs. Fig. 6 - Typical Gate Charge vs. Collector-to-Emitter Voltage Gate-to-Emitter Voltage 1 D = 0.50 0.1 P 0.20 DM 0.10 t 0.05 1 0.02 t 2 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t / t 12 2. Peak T = P x Z + T J DM thJC C A 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Rectangular Pulse Duration (sec) 1 Fig. 7 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com C, Capacitance (pF) Thermal Response (Z ) thJC V , Gate-to-Emitter Voltage (V) GE GA200NS61U 40 1000 V = 360V � ���Ω�� �����Ω CC R = Ohm �� G �� V = 15V GE V = 15V GE ° T = 125 C J V = 360V CC I = 200A C 35 100 I = A 400 C I = A 200 30 C I = A 100 C 10 25 20 1 0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160 ( Ω ) R , Gate Resistance (Ohm) ° T , Junction Temperature ( C ) G J Fig. 8 - Typical Switching Losses vs. Gate Fig. 9 - Typical Switching Losses vs. Resistance Junction Temperature 70 600 R � = O ���Ω h�� m �����Ω �� �� G V = 20V T = 125 C ° GE J V = 360V T = 125° 60 CC J 500 V = 15V GE V measured at terminal (Peak Voltage) CE 50 400 40 300 30 200 20 SAFE OPERATING AREA 100 10 0 0 0 100 200 300 400 0 100 200 300 400 500 600 700 I , Collector-to-emitter Current (A) C V , Collector-to-Emitter Voltage (V) CE Fig. 10 - Typical Switching Losses vs. Fig. 11 - Reverse Bias SOA Collector-to-Emitter Current www.irf.com 5 Total Switching Losses (mJ) Total Switching Losses (mJ) Total Switching Losses (mJ) I Collector-to-Emitter Current (A) C, GA200NS61U 300 160 120 I = 400A F I = 200A I = 400A F 200 F I = 100A IF = 200A F IF = 100A 80 100 40 V = 360V R V = 360V R T = 125°C J T = 125°C T = 25°C J J T = 25°C J 0 0 500 1000 1500 2000 500 1000 1500 2000 di / dt - (A / µs) di / dt - (A / µs) f f Fig. 12 - Typical Reverse Recovery vs. di /dt f Fig. 13 - Typical Recovery Current vs. di /dt f 1000 12000 I = 400A F 10000 I = 200A F I = 100A F 8000 100 6000 T = 125°C J 4000 T = 25°C J 2000 V = 360V R T = 125°C J T = 25°C J 0 10 500 1000 1500 2000 0.0 0.5 1.0 1.5 2.0 2.5 di / dt - (A / µs) Forward Voltage Drop - V ( V ) f F Fig. 15 - Typical Stored Charge vs. di /dt f Fig. 14 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com t - (ns) rr I - (A) RRM Q - (nC) rr Instantaneous Forward Current - I ( A ) F ∫ ∫ ∫ ∫ GA200NS61U L3 90% Vge Vcc Rg2 +Vge +Vg2 Rg1 Vce -Vg2 DUT 90% Ic 10% Vce Ic L1 Ic L 5% Ic td(off) tf L2 t1+5µS Vcc=60% of BVces Eoff = ���� Vce ic��� dt�� Ls= L1+L2+L3 t1 Vge=15V Fig. 16a - Test Circuit for Measurement of I , E , E , t , Q , I , t , t , t , t LM on off(diode) rr rr rr d(on) r d(off) f t1 t2 Fig. 16b - Test Waveforms for Circuit of Fig. 16a, Defining E , t , t off d(off) f trr trr GATE VOLTAGE D.U.T. Qrr = � id ��� d�� t Ic tx 10% +Vg +Vg tx 10% Irr 10% Vcc Vcc DUT VOLTAGE Vce AND CURRENT Vpk Irr 10% Ic Vcc Ipk 90% Ic Ic DIODE RECOVERY WAVEFORMS 5% Vce tr td(on) t2 Eon = Vc ���� e ie dt ����� t4 t1 Erec = Vd id dt �������� t3 DIODE REVERSE t1 t2 RECOVERY ENERGY t3 t4 Fig. 16d - Test Waveforms for Circuit of Fig. 16a, Fig. 16c - Test Waveforms for Circuit of Fig. 16a, Defining E , t , Q , I rec rr rr rr Defining E , t , t on d(on) r www.irf.com 7 GA200NS61U Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 16e. Macro Waveforms for Figure 18a's Test Circuit ���� D.U.T. L � � � ����� ������ � 1000V V * c �������� 50V 6000µF 100V Figure 17.������������������������������������ Figure 18. Pulsed Collector Current Test Circuit 8 www.irf.com GA200NS61U Notes: � Repetitive rating; V = 20V, pulse width limited by GE max. junction temperature. � See fig. 16 � For screws M5x0.8 � Pulse width 50µs; single shot. Case Outline — INT-A-PAK 94.70 3.728 NOT ES: 93.70[3.689] 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 80.30 3.161 2. CONTROLLING DIMENSION: MILLIMETER. 79.70[3.138] 23.50 .925 2X 22.50[.886] 4.50 .177 3.50[.138] 11 6 10 7 34.70 1.366 17.50 .689 33.70[1.327] 16.50[.650] 1 2 3 8 5 6.80 9 4 .267 2X Ø 6.20 [.244] 3X M5 4X FASTON TAB (110) 8.00 .315 8 [.314] 42.00 1.654 2.8 x 0.5 [.110 x .020] 6.60[.260] MAX. 41.00[1.614] 30.50 1.201 29.00[1.142] 24.00 .945 23.00[.906] 8.65 .341 13.30 .524 2X 0.15 [.0059] CONVEX 12.70[.500] 7.65[.301] 32.00 1.260 92.10 3.626 31.00[1.220] 91.10[3.587] Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/01 www.irf.com 9