Manufacturers
INTERNATIONAL RECTIFIER GA200HS60S
Description
MODULE IGBT INT-A-PAK
Part Number
GA200HS60S
Price
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Manufacturer
INTERNATIONAL RECTIFIER
Lead Time
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Category
PRODUCTS - G
Datasheet
Extracted Text
Bulletin I27121 rev. B 07/02 GA200HS60S "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features V = 600V CES • Generation 4 IGBT Technology V = 1.19V @ CE(on) typ. • Standard speed: optimized for hard switching operating frequencies up to 1000 Hz V = 15V, I = 200A GE C • Very Low Conduction Losses • Industry standard package T = 25°C J Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized as output inverter stage for TIG welding machines INT-A-PAK Absolute Maximum Ratings Parameters Max Units V Collector-to-Emitter Voltage 600 V CES I Continuos Collector Current @ T = 25°C 470 A C C @ T = 110°C 200 C I Pulsed Collector Current 800 CM I Peak Switching Current 800 LM V Gate-to-Emitter Voltage ± 20 V GE V RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500 ISOL P Maximum Power Dissipation @ T = 25°C 830 W D C @ T = 85°C 430 C www.irf.com 1 GA200HS60S Bulletin I27121 rev. B 07/02 Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameters Min Typ Max Units Test Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 1mA CES GE C V Collector-to-Emitter Voltage 1.19 1.25 V = 15V, I = 200A CE(on) GE C 1.17 - V = 15V, I = 200A, T = 125°C GE C J V Gate Threshold Voltage 3 6 I = 0.5mA GE(th) C I Collector-to-Emiter Leakage 1 mA V = 0V, V = 600V CES GE CE Current 10 V = 0V, V = 600V, T = 125°C GE CE J I Gate-to-Emitter Leakage Current ± 250 nA V = ± 20V GES GE Switching Characteristics @ T = 25°C (unless otherwise specified) J Parameters Min Typ Max Units Test Conditions Q Total Gate Charge 1600 1700 nC I = 200A g C Q Gate-Emitter Charge 260 340 V = 400V ge CC Qgc Gate-Collector Charge 580 670 V = 15V GE E Turn-On Switching Loss 27 mJ I = 200A, V = 480V, V = 15V on C CC GE E Turn-Off Switching Loss 47 R = 10Ω off g E Total Switching Loss 74 free-wheeling DIODE: 30ETH06 ts E Turn-On Switching Loss 29 31 mJ I = 200A, V = 480V, V = 15V on C CC GE E Turn-Off Switching Loss 77 90 R = 10Ω off g E Total Switching Loss 106 121 free-wheeling DIODE: 30ETH06, T = 125°C ts J C Input Capacitance 32500 pF V = 0V ies GE C Output Capacitance 2080 V = 30V oes CC C Reverse Transfer Capacitance 380 f = 1.0 MHz res Thermal- Mechanical Specifications Parameters Min Typ Max Units T Operating Junction Temperature Range - 40 150 °C J T Storage Temperature Range - 40 125 STG R Junction-to-Case 0.15 °C/ W thJC R Case-to-Sink 0.1 thCS T Mounting torque Case to heatsink 4 Nm Case to terminal 1, 2, 3 3 Weight 185 g 2 www.irf.com GA200HS60S Bulletin I27121 rev. B 07/02 1000 1000 Vge = 15V T = 125˚C J 100 100 T = 25˚C J 10 T = 25˚C J T = 125˚C J Vce = 10V 380µs PULSE WIDTH 10 1 0.5 0.7 0.9 1.1 1.3 1.5 1.7 56 78 V , Collector-to-Emitter Voltage (V) V , Gate-to-Emitter Voltage (V) CE GE Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics 520 2 480 440 I = 400A C 400 360 1.5 320 280 I = 200A C 240 I = 120A 200 C 1 160 120 80 40 0 0.5 25 50 75 100 125 150 20 40 60 80 100 120 140 160 T , Case Temperature (°C) T , Junction Temperature (°C) C J Fig. 3 - Maximum Collector Current vs. Fig. 4 - Typical Collector-to-Emitter Voltage Case Temperature vs. Junction Temperature www.irf.com 3 Maximum DC Collector Current (A) I , Collector-to-Emitter Current (A) C V , Collector-to-Emitter Voltage (V) I , Collector-to-Emitter Current (A) CE C GA200HS60S Bulletin I27121 rev. B 07/02 16 80 Tj = 25˚C, Vce = 480V Vcc = 400V Vge = 15V, Ic = 200A Ic = 200A 70 free-wheeling diode: 30ETH06 12 60 Eoff 50 8 40 Eon 30 4 20 10 0 0 102030 4050 0 300 600 900 1200 1500 1800 Q , Total Gate Charge (nC) R , Gate Reistance (Ω) G G Fig. 5 - Typical Gate Charge vs. Gate-to- Fig. 6 - Typical Switching Losses vs Gate Emitter Voltage Resistance 80 Tj = 125˚C Vce = 480V 70 Vge = 15V Eoff Rge = 10 Ω 60 Free-wheeling diode: 30ETH06 50 40 30 Eon 20 10 0 0 40 80 120 160 200 I , Collector-to-Emitter Current (A) C Fig. 7 - Typical Switching Losses vs Collector-to-Emitter Current 4 www.irf.com V , Gate-to-Emitter Voltage (V) GE Switching Losses (mJ) Switching Losses (mJ) GA200HS60S Bulletin I27121 rev. B 07/02 Outline Table Functional Diagram Electrical Diagram Dimensions in millimeters Note: terminals 9 and 11 are not internally connected terminals 8 and 10 are not assembled in the package www.irf.com 5 GA200HS60S Bulletin I27121 rev. B 07/02 Ordering Information Table Device Code GA 200 H S 60 S 1 2 3 4 5 6 1 - Essential Part Number IGBT modules 2 - Current rating (200 = 200A) 3 - Circuit Configuration (H = Half Bridge without f/w diode) 4 - Int-A-Pak 5 - Voltage Code (60 = 600V) 6 - Speed/ Type (S = Standard Speed IGBT) Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 07/02 6 www.irf.com
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