F5D1/2/3 AlGaAs INFRARED EMITTING DIODE DESCRIPTION PACKAGE DIMENSIONS 0.209 (5.31) • The F5D series is a 880 nm LED in a 0.184 (4.67) narrow angle, TO-46 package. 0.030 (0.76) 0.255 (6.48) NOM FEATURES • Good optical to mechanical alignment 1.00 (25.4) MIN • Mechanically and wavelength matched ANODE SCHEMATIC (CASE) to the TO-18 series phototransistor • Hermetically sealed package 3 ANODE 0.100 (2.54) (Connected • High irradiance level To Case) 0.050 (1.27) CATHODE 1 13 0.040 (1.02) 1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient. Ø0.020 (0.51) 2X 0.040 (1.02) 2. Derate power dissipation linearly 13.0 mW/°C above 25°C case. 45° 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning NOTES: agents. 5. Soldering iron tip 1/16” (1.6mm) minimum from housing. 1. Dimensions for all drawings are in inches (mm). 6. As long as leads are not under any stress or spring tension 2. Tolerance of ± .010 (.25) on all non-nominal dimensions 7. Total power output, P , is the total power radiated by the device into O unless otherwise specified. a solid angle of 2 ! steradians. (T = 25°C unless otherwise specified) ABSOLUTE MAXIMUM RATINGS A Parameter Symbol Rating Unit Operating Temperature T -65 to +125 °C OPR Storage Temperature T -65 to +150 °C STG (3,4,5 and 6) Soldering Temperature (Iron) T 240 for 5 sec °C SOL-I (3,4 and 6) Soldering Temperature (Flow) T 260 for 10 sec °C SOL-F Continuous Forward Current I 100 mA F Forward Current (pw, 10µs; 100Hz) I 3A F Forward Current (pw, 1µs; 200Hz) I 10 A F Reverse Voltage V 3V R (1) Power Dissipation (T = 25°C) P 170 mW D A (2) Power Dissipation (T = 25°C) P 1.3 W D C (TA =25°C) (All measurements made under pulse conditions) ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Peak Emission Wavelength I = 100 mA " — 880 — nm F P Emission Angle at 1/2 Power I = 100 mA # — ±8 — Deg. F Forward Voltage I = 100 mA V — — 1.7 V F F Reverse Leakage Current V = 3 V I — — 10 µA R R (7) Total Power F5D1 I = 100 mA P 12.0 — — mW F O (7) Total Power F5D2 I = 100 mA P 9.0 — — mW F O (7) Total Power F5D3 I = 100 mA P 10.5 — — mW F O Rise Time 0-90% of output t — 1.5 — µs r Fall Time 100-10% of output t — 1.5 — µs f   2001 Fairchild Semiconductor Corporation DS300286 4/24/01 1 OF 3 www.fairchildsemi.com F5D1/2/3 AlGaAs INFRARED EMITTING DIODE Figure 1. Power Output vs. Input Current Figure 2. Power Output vs. Temperature 20 10 I = 1 A F 10 8 6 1.0 4 2 I = 100 mA F 0.1 1 NORMALIZED TO 0.8 I = 100 mA 0.6 F T = 25°C A 0.4 0.01 NORMALIZED TO PULSED INPUTS I = 100 mA, T = 25°C F A P = 80 μsec 0.2 W P = 80 μsec, f = 30 Hz RR W = 30 Hz 0.1 0.001 -25 0 25 50 75 , 100 125 150 1 10 100 1000 I , INPUT CURRENT (mA) F T , AMBIENT TEMPERATURE (°C) A Figure 3. Forward Voltage vs. Temperature Figure 4. Typical Radiation Pattern 100 4 P = 80 μsec W F = 30 Hz I = 1 A F 80 3 F5D 60 I = 0.5 A F 2 40 I = 100 mA F I = 10 mA F 20 1 0 -25 0 25 50 75 100 125 150 -80 -60 -40 -20 0 20 40 60 80 100 T , AMBIENT TEMPERATURE (°C) θ, DISPLACEMENT FROM OPTICAL AXIS (DEGREES) A Figure 5. Output vs. Input with L14G Detector Figure 6. Output vs. Wavelength 100 120 I F I L 100 L14G 5V 10 F5D1 80 TYPICAL SPECTRAL RESPONSE OF SILICON PHOTOSENSORS 60 1.0 TYPICAL OUPUTS F5D AT A DISTANCE OF 40 10 CM PULSED I = 100 mA F 0.1 INPUTS, P = 80 μsec T = 25°C W A 20 RR = 30 Hz 0.01 700 800 900 1000 10 100 1000 I , INPUT CURRENT (mA) λ, WAVE LENGTH (nm) F www.fairchildsemi.com 2 OF 3 4/24/01 DS300286 P , NORMALIZED POWER OUTPUT I , OUTPUT CURRENT (mA) V , FORWARD VOLTAGE (volts) O L F P , RELATIVE OUTPUT (%) P , RELATIVE OUTPUT (%) P , NORMALIZED POWER OUTPUT O O O F5D1/2/3 AlGaAs INFRARED EMITTING DIODE DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HERE- IN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component in any component of a life support 1. Life support devices or systems are devices or device or system whose failure to perform can be systems which, (a) are intended for surgical reasonably expected to cause the failure of the life implant into the body,or (b) support or sustain life, support device or system, or to affect its safety or and (c) whose failure to perform when properly effectiveness. used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. DS300286 4/24/01 3 OF 3 www.fairchildsemi.com