FAIRCHILD SEMICONDUCTOR 1N6266

1N6266 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS  Good optical to mechanical alignment 0.209 (5.31)  Mechanically and wavelength matched to the 0.184 (4.67) TO-18 series phototransistor  Hermetically sealed package 0.030 (0.76) 0.255 (6.48) NOM  High irradiance level  (*) Indicates JEDEC registered values 1.00 (25.4) MIN ANODE (CASE) SCHEMATIC DESCRIPTION  The 1N6266 is a 940 nm LED in a 0.100 (2.54) 3 ANODE (Connected narrow angle, TO-46 package. 0.050 (1.27) To Case) CATHODE 1 13 0.040 (1.02) Ø0.020 (0.51) 2X 0.040 (1.02) 1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient. 45° 2. Derate power dissipation linearly 13.0 mW/°C above 25°C case. NOTES: 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning 1. Dimensions for all drawings are in inches (mm). agents. 2. Tolerance of ± .010 (.25) on all non-nominal dimensions 5. Soldering iron tip 1/16” (1.6mm) minimum from housing. unless otherwise specified. 6. As long as leads are not under any stress or spring tension (T = 25°C unless otherwise specified) ABSOLUTE MAXIMUM RATINGS A Parameter Symbol Rating Unit Operating Temperature T -65 to +125 °C OPR *Storage Temperature T -65 to +150 °C STG (3,4,5 and 6) *Soldering Temperature (Iron) T 240 for 5 sec °C SOL-I (3,4 and 6) *Soldering Temperature (Flow) T 260 for 10 sec °C SOL-F *Continuous Forward Current I 100 mA F *Forward Current (pw, 1µs; 200Hz) I 10 A F *Reverse Voltage V 3V R (1) *Power Dissipation (T = 25°C) P 170 mW A D (2) Power Dissipation (T = 25°C) P 1.3 W C D (TA =25°C) (All measurements made under pulse conditions) ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS *Peak Emission Wavelength I = 100 mA DP 935 — 955 nm F Emission Angle at 1/2 Power 0 — ±10 — Deg. Forward Voltage I = 100 mA VF —— 1.7 V F *Reverse Leakage Current V = 3 V I —— 10 µA R R *Radiant Intensity I = 100 mA Ie 25 —— mW/sr F Rise Time 0-90% of output tr — 1.0 — µs Fall Time 100-10% of output tf — 1.0 — µs   2001 Fairchild Semiconductor Corporation DS300278 3/12/01 1 OF 7 www.fairchildsemi.com 50 µS 100 µS 10 µS PULSE WIDTH = 2 µS 1N6266 GaAs INFRARED EMITTING DIODE MAXIMUM RATINGS CURVES 10 150 8 6 125 4 100 2 1.0 75 0.8 100% Duty Cycle 10% Duty 1% Duty 0.6 Cycle Cycle 50 0.4 25 0.2 0.1 0 10 100 1000 10,000 100,000 .01 .02 .04 .06 .08 0.1 .2 .4 .6 .8 1.0 2 4 6 8 10 f = FREQUENCY - HERTZ I - INPUT CURRENT (mA) F Fig.1 Maximum Pulse Capability Fig.2 Maximum Temperature vs. Input Current 10.0 100 .80 8.0 60 6.0 40 4.0 20 2.0 10 8 6 1.0 4 0.8 0.6 2 0.4 1.0 .8 .6 0.2 .4 Normalized to: 0.1 .2 .08 I = 100 mA F .06 .10 N = .01 Steradians .08 .04 .06 T = 25˚C A .04 .02 .02 .01 .01 .01 .02 .04 .06.08 .1 .2 .4 .6 .8 1.0 2 4 6 8 10 02143 5687 910 I - INPUT CURRENT (A) V - FORWARD VOLTAGE (V) F F Fig.3 Radiant Intensity vs. Fig.4 Forward Voltage vs. Input Current le/l Forward Current www.fairchildsemi.com 2 OF 7 3/12/01 DS300278 I = NORMALIZED RADIANT INTENSITY I = INPUT CURRENT (mA) e F T = MAXIMUM ALLOWABLE AMBIENT A I = FORWARD CURRENT (A) F TEMPERATURE (˚C) 1N6266 GaAs INFRARED EMITTING DIODE MAXIMUM RATINGS CURVES 100 1.0 80 60 0.8 40 20 0.6 10 T = 100˚C 25˚C -55˚C A 8 6 0.4 4 0.2 2 0 0 0.9 1.0 1.1 1.2 1.3 1.4 1.5 880 900 920 940 960 980 1000 1020 V - FORWARD VOLTAGE (V) D- WAVELENGTH - NANOMETERS F Fig.5 Forward Voltage vs. Forward Current Fig.6 Spectral Output 100 80 60 Normalized to: 40 I = 100 mA F N = .01 Steradians 20 T = 25˚C A I = 1 A F 10 Silicon Photodiode 8 as Detector 6 4 2 I = 100 mA F 1.0 .8 .6 .4 .2 I = 10 mA F .10 .08 .06 .04 .02 .01 -50 -25 0 25 50 75 100 125 150 T - AMBIENT TEMPERATURE (˚C) A Fig.7 Output vs. Temperature DS300278 3/12/01 3 OF 7 www.fairchildsemi.com I = FORWARD CURRENT (mA) F I = NORMALIZED POWER OUTPUT R RELATIVE OUTPUT 1N6266 GaAs INFRARED EMITTING DIODE INFRARED EMITTING DIODE RADIANT INTENSITY The design of an Infrared Emitting Diode (IRED)-photode- Radiant intensity provides an easy, accurate tool to calcu- tector system normally requires the designer to determine late the infrared power received by a photodetector locat- the minimum amount of infrared irradiance received by the ed on the IRED axis. As the devices are selected for photodetector, which then allows definition of the photode- beam characteristics, the calculated results are valid for tector current. Prior to the introduction of the 1N6266, the worst case analysis. For many applications a simple best method of estimating the photodetector received approximation for photodetector irradiance is: 2 2 infrared was to geometrically proportion the piecewise inte- H ≅ Ie/d , in mw/cm gration of the typical beam pattern with the specified mini- mum total power output of the IRED. However, due to where d is the distance from the IRED to the detector in inconsistencies of the IRED integral lenses and the beam cm. lobes, this procedure will not provide a valid estimation. IRED power output, and therefore Ie, depends on IRED current. This variation (I /I) is documented in Figure 3, e The 1N6266 now provides the designer specifications 2 and completes the approximation: H = I /d (I /I). This e e which precisely define the infrared beam along the device’s normally gives a conservative value of irradiance. For mechanical axis. The 1N6266 is a premium device select- more accurate results, the effect of precise angle viewed ed to give a minimum radiant intensity of 25 mW/steradian by the detector must be considered. This is documented into the 0.01 steradians referenced by the the device’s in figure 8 (I /N) giving: e mechanical axis and seating plane. Radiant intensity is the 2 2 H = I /d (I /N) in mw/cm IRED beam power output, within a specified solid angle, e e per unit solid angle. For worst case designs, temperature coefficients and tol- A quick review of geometry indicates that a steradian is a erances must be considered. unit of solid angle, referenced to the center of a sphere, defined by 4 H times the ratio of the area projected by the The minimum output current of the detector (I ) can be L solid angle to the area of the sphere. The solid angle is determined for a given distance (d) of the detector from equal to the projected area divided by the squared radius. the IRED. 2 I = (S)H ≅ (S) I /d L e 2 2 Steradians = 4 H A/4 H R = A/R = N or 2 I = (S)H = (S) (I /d ) (I /N) (I /I) L e e e As the projected area has a circular periphery, a geometric integration will solve to show the relationship of the Cartesian angle () of the cone, (from the center of the where S is the sensitivity of the detector in terms of out- sphere) to the projected area. put current per unit irradiance from a GaAs source.  N= 2 H(1 - COS ) 2 www.fairchildsemi.com 4 OF 7 3/12/01 DS300278 1N6266 GaAs INFRARED EMITTING DIODE IRED RADIANT INTENSITY SPECIFICATION CONCEPT IRED Seating Plane Area "A" Receives SPHERE IRED Power "Pw" Centered on IRED Axis C  L C and L Seating Plane d 2  N = A/d = 2H(I - COS ) Steradians 2 I = Pw/N mW/Steradians e 2 2 H = Pw/A = I /d mW/cm e MATCHING A PHOTOTRANSISTOR WITH 1N6266 Assume a system requiring a 10 mA I at an IRED to detector spacing of 2 cm (seating plane to seating plane), with L bias conditions at specification points. Given: d = 2 cm, I = 10 mA min.; I = 25 mW/Steradian 1 L e 2 2 2 Then: H ≅ I /d = 25/(2) = 6.25 mW/cm 1 e 1 Detector Evaluation: I MIN @ H (GaAs) ≅ S(GaAs) L 2 2 TYPE mA mW/cm mA/mw/cm L14G1 1 0.5 2 L14G2 0.5 0.5 1 Calculated I @ d is: L 1 L14G1 (S) H = (2) 6.25 = 12.5 mA 1 L14G2 (S) H = (1) 6.25 = 6.25 mA 1 Since the system requires an I of 10 mA minimum the correct device to use is the L14G1. L TYPICAL CHARACTERISTICS 1.4 A AREA A N= 2 r 1.2  N= 2H(I - COS ) 2 1.0  r 0.8 0.6 Normalized to: I = 100 mA F N = .01 Steradians 0.4 T = 25˚C A 0.2 0.1 .001 .002 .004 .006 .01 .02 .04 .06.08 .1 Steradians - N .6 .8 1.0 1 1 1 1 1 1 1 1 1 1 2 3 4 5 7 10 15 20 45 60 Degrees -  Fig.8 Intensity and Power vs. Angle l /N e DS300278 3/12/01 5 OF 7 www.fairchildsemi.com I = NORMALIZED RADIANT INTENSITY F 1N6266 GaAs INFRARED EMITTING DIODE MAXIMUM RATINGS CURVES 1.4 100.0 Normalized to: I = 100 mA F 1.2 D = 6 cm Distance measured from seating plane to seating plane 1.0 10.0 1N6N66 L14G1 0.8 D 0.6 I = 1A, Pulsed F Normalized to: 1.0 I = 100 mA 1N6266 L14G1 0.4 F V = 5 V CE I = 100 mA, DC F T = 25˚C A 1.0" 0.2 0 0 -50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 T - AMBIENT TEMPERATURE (C) D - cm A Fig. 9 Output vs. Ambient Temperature Fig. 10 I vs. Distance L IRED/Phototransistor Pair IRED/Phototransistor Pair www.fairchildsemi.com 6 OF 7 3/12/01 DS300278 I = NORMALIZED COLLECTOR CURRENT CE(ON) NORMALIZED I CE(ON) 1N6266 GaAs INFRARED EMITTING DIODE DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component in any component of a life support systems which, (a) are intended for surgical device or system whose failure to perform can be implant into the body,or (b) support or sustain life, reasonably expected to cause the failure of the life and (c) whose failure to perform when properly support device or system, or to affect its safety or used in accordance with instructions for use provided effectiveness. in labeling, can be reasonably expected to result in a significant injury of the user. DS300278 3/12/01 7 OF 7 www.fairchildsemi.com