Manufacturers
DIODES INC DDTC114GE-7
Description
TRANS PREBIASED NPN 150MW SOT523
Part Number
DDTC114GE-7
Price
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Manufacturer
DIODES INC
Lead Time
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Category
PRODUCTS - D
Datasheet
Extracted Text
DDTC (R2-ONLY SERIES) E NPN PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR Features SOT-523 � Epitaxial Planar Die Construction � Complementary PNP Types Available Dim Min Max Typ A (DDTA) A 0.15 0.30 0.22 C � Built-In Biasing Resistor, R2 only B 0.75 0.85 0.80 B C TOP VIEW C 1.45 1.75 1.60 Mechanical Data B E D �� 0.50 G � Case: SOT-523, Molded Plastic G 0.90 1.10 1.00 H � Case material - UL Flammability Rating 94V-0 H 1.50 1.70 1.60 K M � Moisture sensitivity: Level 1 per J-STD-020A N J 0.00 0.10 0.05 � Terminals: Solderable per MIL-STD-202, K J 0.60 0.80 0.75 D L Method 208 L 0.10 0.30 0.22 � Terminal Connections: See Diagram M 0.10 0.20 0.12 � Marking: Date Code and Marking Code (See Diagrams & Page 2) N 0.45 0.65 0.50 � Weight: 0.002 grams (approx.) � 0� 8�� � Ordering Information (See Page 2) C All Dimensions in mm B P/N R2 (NOM) MARKING DDTC114GE 10K� N26 R DDTC124GE 22K� N27 2 DDTC144GE 47K� N28 DDTC115GE 100K� N29 E SCHEMATIC DIAGRAM @ T = 25�C unless otherwise specified Maximum Ratings A Characteristic Symbol Value Unit Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V CEO 50 V V Emitter-Base Voltage EBO 5V Collector Current I (Max) 100 mA C Power Dissipation P 150 mW d Thermal Resistance, Junction to Ambient Air (Note 1) R 833 �C/W �JA Operating and Storage and Temperature Range T,T j STG -55 to +150 �C Note: 1. Mounted on FR4 PC Board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30316 Rev. 3 - 1 1 of 3 DDTC (R2-ONLY SERIES) E NEW PRODUCT @ T = 25�C unless otherwise specified Electrical Characteristics A Characteristic Symbol Min Typ Max Unit Test Condition BV Collector-Base Breakdown Voltage CBO 50 �� V I = 50�A C I = 1mA Collector-Emitter Breakdown Voltage BV 50 �� V C CEO I = 720�A, DDTC114GE E I = 330�A, DDTC124GE E BV � Emitter-Base Breakdown Voltage EBO 5 � V I = 160�A, DDTC144GE E I = 72�A, DDTC115GE E Collector Cutoff Current I V = 50V CBO �� 0.5 �A CB DDTC114GE 300 580 DDTC124GE 140 260 I V = 4V Emitter Cutoff Current EBO � �A EB DDTC144GE 65 130 DDTC115GE 30 58 I = 10mA, I = 0.5mA Collector-Emitter Saturation Voltage V �� 0.3 V C B CE(sat) DDTC114GE 30 DDTC124GE 56 I = 5mA, V = 5V DC Current Transfer Ratio h �� � C CE FE DDTC144GE 68 DDTC115GE 82 Bleeder Resistor (R ) Tolerance DR -30 � +30 % � 2 2 V = 10V, I = -5mA, CE E f Gain-Bandwidth Product* T � 250 � MHz f = 100MHz * Transistor - For Reference Only (Note 2) Ordering Information Device Packaging Shipping DDTC114GE-7 SOT-523 3000/Tape & Reel DDTC124GE-7 SOT-523 3000/Tape & Reel DDTC144GE-7 SOT-523 3000/Tape & Reel DDTC115GE-7 SOT-523 3000/Tape & Reel Notes: 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information XXX = Product Type Marking Code (See Page 1, e.g. N26 = DDTC114GE) YM = Date Code Marking XXXYM Y = Year (ex: N = 2002) M = Month (ex: 9 = September) Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 2009 Code NP R S T UV W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 12 3 4 5 6 7 89 O N D DS30316 Rev. 3 - 1 2 of 3 DDTC (R2-ONLY SERIES) E NEW PRODUCT TYPICAL CURVES - DDTC114GE 250 1 I/I =10 CB 200 0.1 75°C 150 -25°C 25°C 100 0.01 50 0 0.001 -50 0 50 100 150 10 40 0 20 30 50 I , COLLECTOR CURRENT (mA) T , AMBIENT TEMPERATURE (°C) C A Fig. 2 V vs. I Fig. 1 Derating Curve CE(SAT) C 1000 5 V = 10 I=0mA CE E 4 75°C 3 100 2 25°C -25°C 1 0 0 10 15 25 30 10 5 20 1 10 100 V , REVERSE BIAS VOLTAGE (V) R I , COLLECTOR CURRENT (mA) C Fig. 4 Output Capacitance Fig. 3 DC CURRENT GAIN 1000 10 75°C V = 0.2 O 100 75°C -25°C 10 -25°C 25°C 1 25°C 1 0.1 0.01 0.001 0.1 01 2 3 4 5 67 89 10 0 200 100 300 400 500 600 700 V , INPUT VOLTAGE (V) I , COLLECTOR CURRENT (mA) in C Fig. 5 Collector Current Vs. Input Voltage Fig. 6 Input Voltage vs. Collector Current DS30316 Rev. 3 - 1 3 of 3 DDTC (R2-ONLY SERIES) E NEW PRODUCT hFE, DC CURRENT GAIN (NORMALIZED) I , COLLECTOR CURRENT (mA) P , POWER DISSIPATION (MILLIWATTS) C D C , CAPACITANCE (pF) OB V , INPUT VOLTAGE (V) in V , MAXIMUM COLLECTOR VOLTAGE (V) CE(SAT)
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