Manufacturers
DIODES INC 2N3906DI
Description
TRANSISTOR PNP 40V TO-92
Part Number
2N3906DI
Price
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Manufacturer
DIODES INC
Lead Time
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Category
PRODUCTS - 2
Datasheet
Extracted Text
2N3906 / MMBT3906 PNP SMALL SIGNAL TRANSISTORS POWER SEMICONDUCTOR Features MMBT3906 • Epitaxial Planar Die Construction SOT-23 • Available in Both Through-Hole and Surface Dim Min Max A Mount Packages A 0.37 0.51 C • Suitable for Switching and Amplifier B 1.19 1.40 Applications C 2.10 2.50 TOP VIEW C B D 0.89 1.05 • Complementary NPN Types Available E 0.45 0.61 (2N3904/MMBT3904) B E G 1.78 2.05 D G H 2.65 3.05 E J 0.013 0.15 H K 0.89 1.10 L 0.45 0.61 K M 0.076 0.178 Mechanical Data L All Dimensions in mm M • Case: TO-92/SOT-23, Molded Plastic J • Leads/Terminals: Solderable per MIL-STD-202, Method 208 2N3906 • Terminal Connections: See Diagram E A • Marking: TO-92 Type Number TO-92 SOT-23 2A, 3N, R2A, K3N B Dim Min Max • Approx Weight: TO-92 0.18 grams SOT-23 0.008 grams A 4.32 4.83 B 4.32 4.78 C 12.50 15.62 C D 0.36 0.56 E 3.15 3.94 G 2.29 2.79 D H 1.14 1.40 CB E All Dimensions in mm Bottom View H G @T = 25°C unless otherwise specified A Maximum Ratings Characteristic Symbol Value Unit Collector-Base Voltage V -40 V CBO Collector-Emitter Voltage V -40 V CEO Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous I -100 mA C Collector Current - Peak I -200 mA CM Power Dissipation TO-92 (2N3906) (Note 1) P 500 mW d SOT-23 (MMBT3906) (Note 2) T =50°C 300 SB Operating and Storage Temperature Range Tj,TSTG -55 to +150 °C Notes: 1. Leads maintained at a distance of 2.0mm from body at specified ambient temperature (TO-92). 2 2. Device mounted on ceramic substrate 0.7mm x 2.5 cm area (SOT-23). 3. Pulse test: Pulse widthl300μs, duty cyclel2%. DS11202 Rev. I 1 of 3 2N3906/MMBT3906 @TA = 25°C unless otherwise specified Electrical Characteristics Characteristic Symbol Min Max Unit Test Condition -V = 1.0V,- I = 0.1mA 50 — CE C -V = 1.0V,- I = 1.0mA 70 — CE C DC Current Gain hFE 100 300 — -V = 1.0V,- I = 10mA CE C -V = 1.0V,- I = 50mA 60 — CE C 30 — -V = 1.0V,- I = 100mA CE C (Note 3) 0.25 Collector Saturation Voltage V — V -I = 10mA,- I = 1.0mA CE(SAT) C B 0.40 -I = 50mA,- I = 5.0mA C B (Note 3) Base Saturation Voltage V — 0.85 V -I = 10mA, -I = 1.0mA BE(SAT) C B 0.95 -I = 50mA, -I = 5.0mA C B Collector Cutoff Current I —50 nA -V = 3.0V, -V = 30V CEX EB CE Emitter Cutoff Current -V = 3.0V, -V = 30V IBL —50 nA EB CE Collector-Base Breakdown Voltage V 40 — V -I = 10μA, -I =0 (BR)CBO C E Collector-Emitter Breakdown Voltage V 40 — V -I = 1.0mA,- I = 0 (Note 3) (BR)CEO C B Emitter-Base Breakdown Voltage V 5.0 — V -I = 10μA,- I =0 (BR)EBO E C -V = 20V, -I = 10mA, CE C Gain Bandwidth Product fT 250 — MHz f = 100MHz = 5.0V, -I = 0, f = 100kHz Collector-Base Capacitance C — 4.5 pF -V CBO CB E Emitter-Base Capacitance C —10 pF -V = 0.5V, -I = 0, f = 100kHz EBO EB C -V = 5.0V, -I = 100μA, CE C Noise Figure NF — 5.0 dB R =1.0kΩ,f=10 to 15000Hz G -I = 1.0mA, -I = 10mA, B1 C Delay Time t —35 ns d V = 3.0V, V =0.5V CC BE(off) -I = 1.0mA,- I = 10mA, B1 C Rise Time tr —35 ns -V = 3.0V, -V = 0.5V CC BE(off) -I =- I = 1.0mA, B1 B2 Storage Time ts — 225 ns -I = 10mA, -V =3.0V C CC -I =- I = 1.0mA, B1 B2 Fall Time t —75 ns f -I = 10mA, -V =3.0V C CC Thermal Resistance, Junction to Ambient TO-92, (2N3906) R — 250 K/W Note 1 θJA SOT-23,( MMBT3906) 625 Note 2 Notes: 1. Leads maintained at a distance of 2.0mm from body at specified ambient temperature (TO-92). 2 2. Device mounted on ceramic substrate 0.7mm x 2.5 cm area (SOT-23). 3. Pulse test: Pulse widthl300μs, duty cyclel2%. DS11202 Rev. I 2 of 3 2N3906/MMBT3906 500 800 600 V=5V CE 3V 100 1V 400 2N3906 200 MMBT3906 10 0 0.1 1000 0 50 100 150 200 1.0 10 100 I , COLLECTOR CURRENT (mA) C T , AMBIENT TEMPERATURE (�C) A Fig. 1, DC Current Gain vs Collector Current Fig. 2, Max Power Dissipation vs Ambient Temperature 0.4 500 I/I =10 CB T = 25�C A 0.3 100 t off 0.2 t on 10 0.1 tI =I/10 on B1 C V = 0.5V BE(OFF) t I =I =I /10 off B1 B2 C 0 1 1.0 10 100 1000 1 10 100 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Fig. 3, Collector-Emitter Sat Voltage vs Collector Current Fig. 4, Turn-On & Turn-Off Times vs Collector Current DS11202 Rev. I 3 of 3 2N3906/MMBT3906 V , COLLECTOR-EMITTER SATURATION VOLTAGE (V) h , DC CURRENT GAIN CE(SAT) FE t, TIME (ns) P , POWER DISSIPATION (mW) d
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