Package Types: 440199 PN: CGH40180PP CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40180PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package. FEATURES APPLICATIONS • Up to 2.5 GHz Operation • 2-Way Private Radio • 20 dB Small Signal Gain at 1.0 GHz • Broadband Amplifiers • 15 dB Small Signal Gain at 2.0 GHz • Cellular Infrastructure • 220 W typical P • Test Instrumentation SAT • 70 % Efficiency at P • Class A, AB, Linear amplifiers suitable SAT • 28 V Operation for OFDM, W-CDMA, EDGE, CDMA waveforms Subject to change without notice. 1 www.cree.com/rf Rev 2.0 – October 2013 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 84 Volts 25˚C DSS Gate-to-Source Voltage V -10, +2 Volts 25˚C GS Storage Temperature T -65, +150 ˚C STG Operating Junction Temperature T 225 ˚C J Maximum Forward Gate Current I 60 mA 25˚C GMAX 1 Maximum Drain Current I 24 A 25˚C DMAX 2 Soldering Temperature T 245 ˚C S Screw Torque τ 80 in-oz 3 Thermal Resistance, Junction to Case R 0.9 ˚C/W 85˚C θJC 3,4 Case Operating Temperature T -40, +150 ˚C 30 seconds C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp 3 CGH40180PP at P = 224 W. DISS 4 See also, the Power Dissipation De-rating Curve on Page 6. Electrical Characteristics (T = 25˚C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 57.6 mA GS(th) DC DS D Gate Quiescent Voltage V – -2.7 – V V = 28 V, I = 2.0 A GS(Q) DC DS D 2 Saturated Drain Current I 46.4 56.0 – A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 120 – – V V = -8 V, I = 57.6 mA BR DC GS D 3,4 RF Characteristics (T = 25˚C, F = 1.3 GHz unless otherwise noted) C 0 Power Gain P 13 - - dB V = 28 V, I = 2.0 A, P = P G DD DQ OUT SAT Small Signal Gain G - 19 – dB V = 28 V, I = 2.0 A SS DD DQ 5 Power Output at Saturation P 180 220 – W V = 28 V, I = 2.0 A SAT DD DQ 6 η Drain Efficiency 56 65 – % V = 28 V, I = 2.0 A, P = P DD DQ OUT SAT No damage at all phase angles, Output Mismatch Stress VSWR – – 10 : 1 Y V = 28 V, I = 2.0 A, DD DQ P = 180 W CW OUT 7 Dynamic Characteristics Input Capacitance C – 35.7 – pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C – 9.6 – pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C – 1.6 – pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGH40180PP-TB, including all coupler losses. 4 I of 2.0 A is by biasing each device at 1.0 A. DQ 5 P is defined as: Q1 or Q2 = I = 2.8 mA. SAT G 6 Drain Efficiency = P / P OUT DC 7 Capacitance values are for each side of the device. Cree, Inc. 4600 Silicon Drive Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Cree logo are registered trademarks of Cree, Inc. Fax: +1.919.869.CREE Fax: +1.919.869.2733 2 CGH40180PP Rev 2.0 www.cree.com/rf Typical Performance Gain and Return Loss vs Frequency of the CGH40180PP measured in Broadband Amplifier Circuit CGH40180PP-TB V = 28 V, I = 2.0 A, Freq = 0.8 - 1.7 GHz S-parameter CGH40180PP DD DQ 24 10 21 5 S21 18 0 15 -5 S1 S11 1 12 -10 9 -15 S21 6 -20 S11 3 -25 0 -30 800 900 1000 1100 1200 1300 1400 1500 1600 1700 Frequency (MHz) Output Power and Drain Efficiency vs Frequency of the CGH40180PP measured in Broadband Amplifier Circuit CGH40180PP-TB V = 28 V, I = 2.0 A PoDD wer and Efficiency DQ vs Frequency 250 100% Psat 235 90% 220 80% 205 70% Drain Efficiency 190 60% 175 50% 160 40% 145 30% Psat Efficiency 130 20% 115 10% 100 0% 1100 1150 1200 1250 1300 Frequency (MHz) Cree, Inc. 4600 Silicon Drive Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Cree logo are registered trademarks of Cree, Inc. Fax: +1.919.869.CREE Fax: +1.919.869.2733 3 CGH40180PP Rev 2.0 www.cree.com/rf S S2 21 1 ( (d dB B) ) O Ou ut tp pu ut t P Po ow we er r ( (W W) ) D Dr ra aiin n E Ef ff fiic ciie en nc cy y S S1 11 1 ( (d dB B) ) Typical Performance Gain and Drain Efficiency vs Output Power of the CGH40180PP in Broadband Amplifier Circuit CGH40180PP-TB V = 28 V, I = 2.0 A DD DQ 22 80% gain 1100 gain 1150 gain 1200 gain 1250 gain 1300 20 70% eff 1100 eff 1150 eff 1200 eff 1250 eff 1300 18 60% Gain 16 50% 14 14 40% 40% Drain 12 30% Efficiency 10 20% 8 10% 6 0% 30 32 34 36 38 40 42 44 46 48 50 52 54 Output Power (dBm) Cree, Inc. 4600 Silicon Drive Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Cree logo are registered trademarks of Cree, Inc. Fax: +1.919.869.CREE Fax: +1.919.869.2733 4 CGH40180PP Rev 2.0 www.cree.com/rf G Ga aiin n ( (d dB B) ) D Dr ra aiin n E Ef ff fiic ciie en nc cy y Typical Performance Simulated Maximum Available Gain and K Factor of the CGH40180PP V = 28 V, I = 1.0 A DD DQ Typical Noise Performance Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40180PP V = 28 V, I = 1 A DD DQ Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C Cree, Inc. 4600 Silicon Drive Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Cree logo are registered trademarks of Cree, Inc. Fax: +1.919.869.CREE Fax: +1.919.869.2733 5 CGH40180PP Rev 2.0 www.cree.com/rf Minimum Noise Figure (dB) MAG (dB) K Factor Noise Resistance (Ohms) CGH40180PP Power Dissipation De-rating Curve CGH40180PP CW Power Dissipation De-rating Curve 250 200 150 100 Note 1 50 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). CGH40180PP Transient Power Dissipation De-rating Curve CGH40180PP Transient Power Dissipation De-Rating Curve 250 200 150 100 Note 1 50 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Note 2. This transient de-rating curve assumes a 1msec pulse with a 20% duty cycle with no power dissipated during the “off-cycle.” Cree, Inc. 4600 Silicon Drive Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Cree logo are registered trademarks of Cree, Inc. Fax: +1.919.869.CREE Fax: +1.919.869.2733 6 CGH40180PP Rev 2.0 www.cree.com/rf P Po ow we er r D Diis ss siip pa at tiio on n ( (W W) ) P Po ow we er r D Diis ss siip pa at tiio on n ( (W W) ) Thermal Resistance as a Function of Pulse Width Heating Curve for 2x28.8mm GaN HEMT in 440199 Package at 4W/mm 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.00E-08 1.00E-07 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 Time (seconds) Note 1: This heating curve assumes zero power dissipation during the “off” portion of the duty cycle. Note 2: This data is for transient power dissipation at 224 W, Duty Cycle = 20 %. Simulated Source and Load Impedances D1 Z Source 1 Z Load 1 G1 S G2 Z Source 2 Z Load 2 D2 Frequency (MHz) Z Source Z Load 500 2.85 + j1.99 5.27 + j0.68 1000 0.8 + j0.42 4.91 + j0.36 1500 0.84 - j1.69 4.65 - j0.24 2000 0.88 - j3.05 2.8 - j1.05 2500 1.08 - j4.5 3.1 - j2.47 3000 1.25 - j6.06 3.1 - j4.01 Note 1. V = 28V, I = 2.0 A in the 440199 package. DD DQ Note 2. Optimized for power gain, P and PAE. SAT Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. Cree, Inc. 4600 Silicon Drive Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Cree logo are registered trademarks of Cree, Inc. Fax: +1.919.869.CREE Fax: +1.919.869.2733 7 CGH40180PP Rev 2.0 www.cree.com/rf R Rt th h ( (C C//W W) ) CGH40180PP-TB Demonstration Amplifier Circuit Schematic CGH40180PP-TB Demonstration Amplifier Circuit Outline Cree, Inc. 4600 Silicon Drive Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Cree logo are registered trademarks of Cree, Inc. Fax: +1.919.869.CREE Fax: +1.919.869.2733 8 CGH40180PP Rev 2.0 www.cree.com/rf CGH40180PP-TB Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 100 Ohm, +/-1%, 1 W, 2512 1 R10,R20 RES, 511 Ohm, +/- 5%, 1/16W, 0603 2 R30,R40 RES, 1/16W, 0603, 1%, 5.1 OHMS 2 C1,C2,C3,C4,C30,C40,C70,C80 CAP, 27 pF,+/-5% 0805,ATC600F 8 C10,C11,C13,C14,C20,C21,C23,C24 CAP, 3.9PF, +/-0.1 pF, 0603, ATC600S 8 C12,C22 CAP, 3.3PF, +/-0.1 pF, 0603, ATC600S 2 C15,C19,C25,C29 CAP, 1.8PF, +/-0.1 pF, 0603, ATC600S 4 C16,C26 CAP, 1.0PF, +/-0.1 pF, 0603, ATC600S 2 C17,C27 CAP, 0.9PF, +/-0.1 pF, 0603, ATC600S 2 C31,C41 CAP, 100 pF,+/-5%, 0603,ATC600S 2 C32,C42 CAP, 470 pF, 5%, 100V, 0603, X7R 2 C34,C44,C72,C82 CAP, 33000 pF, 0805, 100V, X7R 4 C35,C45 CAP, 10 uF, 16V, TANTALUM 2 C50,C51,C60,C61 CAP, 5.6 pF, +/-0.1 pF, 0805, ATC600F 4 C52,C62 CAP, 2.7 pF, +/-0.1 pF, 0805, ATC600F 2 C53,C63 CAP, 2.2 pF, +/-0.1 pF, 0805, ATC600F 2 C54,C64 CAP, 1.1 pF, +/-0.05 pF, 0805, ATC600F 2 C55,C65 CAP, 0.5 pF, +/-0.05 pF, 0805, ATC600F 2 C73,C83 CAP, 1.0 uF, +/-10%, 1210, 100V, X7R 2 C74,C84 CAP, 33 uF, 100V, ELECT, FK, SMD 2 L10,L20 IND, 6.8 nH, 0603, L-14C6N8ST 2 L30,L40 FERRITE, 220 OHM, 0603, BLM21PG221SN1 2 J1,J2 CONN, N-Type, Female, 0.500 SMA Flange 2 J3,J4 CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS 2 - PCB, RO4350, Er = 3.48, h = 20 mil 1 Q1 CGH40180PP 1 CGH40180PP-TB Demonstration Amplifier Circuit Cree, Inc. 4600 Silicon Drive Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Cree logo are registered trademarks of Cree, Inc. Fax: +1.919.869.CREE Fax: +1.919.869.2733 9 CGH40180PP Rev 2.0 www.cree.com/rf Typical Package S-Parameters for CGH40180PP, Single Side (Small Signal, V = 28 V, I = 1000 mA, angle in degrees) DS DQ Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.957 -177.48 4.22 79.26 0.007 10.74 0.798 -179.16 600 MHz 0.957 -178.74 3.51 76.30 0.007 12.14 0.800 -179.41 700 MHz 0.957 -179.78 3.00 73.47 0.007 13.71 0.802 -179.63 800 MHz 0.957 179.32 2.62 70.74 0.007 15.38 0.804 -179.84 900 MHz 0.957 178.51 2.33 68.08 0.007 17.15 0.807 179.96 1.0 GHz 0.957 177.76 2.09 65.49 0.007 18.99 0.809 179.74 1.1 GHz 0.957 177.06 1.90 62.95 0.007 20.87 0.812 179.52 1.2 GHz 0.957 176.38 1.73 60.46 0.007 22.80 0.814 179.28 1.3 GHz 0.957 175.72 1.60 58.02 0.008 24.73 0.817 179.03 1.4 GHz 0.956 175.08 1.48 55.63 0.008 26.66 0.820 178.76 1.5 GHz 0.956 174.44 1.38 53.29 0.008 28.57 0.823 178.46 1.6 GHz 0.956 173.81 1.29 50.98 0.008 30.44 0.825 178.15 1.7 GHz 0.956 173.18 1.22 48.72 0.008 32.25 0.828 177.82 1.8 GHz 0.955 172.55 1.15 46.50 0.009 33.98 0.831 177.47 1.9 GHz 0.955 171.91 1.09 44.32 0.009 35.62 0.833 177.10 2.0 GHz 0.955 171.27 1.04 42.17 0.009 37.17 0.835 176.71 2.1 GHz 0.954 170.62 0.99 40.06 0.010 38.61 0.838 176.30 2.2 GHz 0.954 169.96 0.95 37.98 0.010 39.93 0.840 175.87 2.3 GHz 0.953 169.29 0.91 35.93 0.011 41.14 0.842 175.42 2.4 GHz 0.952 168.60 0.87 33.91 0.011 42.22 0.844 174.95 2.5 GHz 0.952 167.90 0.84 31.92 0.012 43.18 0.845 174.47 2.6 GHz 0.951 167.18 0.82 29.95 0.013 44.01 0.847 173.96 2.7 GHz 0.950 166.45 0.79 28.00 0.013 44.73 0.848 173.44 2.8 GHz 0.949 165.69 0.77 26.07 0.014 45.32 0.849 172.89 2.9 GHz 0.948 164.91 0.75 24.15 0.015 45.79 0.850 172.33 3.0 GHz 0.946 164.10 0.73 22.24 0.016 46.15 0.850 171.74 3.2 GHz 0.943 162.39 0.71 18.45 0.018 46.53 0.851 170.51 3.4 GHz 0.939 160.55 0.69 14.64 0.020 46.47 0.850 169.19 3.6 GHz 0.935 158.53 0.67 10.80 0.023 45.97 0.848 167.76 3.8 GHz 0.929 156.31 0.67 6.86 0.027 45.03 0.845 166.21 4.0 GHz 0.922 153.83 0.67 2.78 0.031 43.63 0.841 164.53 4.2 GHz 0.913 151.03 0.68 -1.51 0.036 41.72 0.834 162.69 4.4 GHz 0.901 147.82 0.69 -6.12 0.042 39.23 0.825 160.65 4.6 GHz 0.886 144.10 0.72 -11.16 0.049 36.07 0.813 158.39 4.8 GHz 0.866 139.68 0.76 -16.81 0.059 32.05 0.797 155.86 5.0 GHz 0.838 134.36 0.81 -23.30 0.073 26.92 0.775 153.00 5.2 GHz 0.799 127.78 0.88 -30.99 0.091 20.30 0.747 149.76 5.4 GHz 0.742 119.49 0.97 -40.41 0.117 11.55 0.708 146.16 5.6 GHz 0.658 108.92 1.08 -52.33 0.157 -0.34 0.657 142.31 5.8 GHz 0.534 95.85 1.21 -67.76 0.219 -16.90 0.594 138.62 6.0 GHz 0.373 82.93 1.34 -87.69 0.321 -40.38 0.534 134.70 Download this s-parameter file in “.s2p” format at http://www.cree.com/products/wireless_s-parameters.asp Cree, Inc. 4600 Silicon Drive Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Cree logo are registered trademarks of Cree, Inc. Fax: +1.919.869.CREE Fax: +1.919.869.2733 10 CGH40180PP Rev 2.0 www.cree.com/rf Product Dimensions CGH40180PP (Package Type — 440199) Cree, Inc. 4600 Silicon Drive Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Cree logo are registered trademarks of Cree, Inc. Fax: +1.919.869.CREE Fax: +1.919.869.2733 11 CGH40180PP Rev 2.0 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/wireless Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Cree, Inc. 4600 Silicon Drive Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Cree logo are registered trademarks of Cree, Inc. Fax: +1.919.869.CREE Fax: +1.919.869.2733 12 CGH40180PP Rev 2.0 www.cree.com/rf