AP9926GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼▼▼▼ Low on-resistance BV 20V D2 DSS D2 ▼▼▼▼ Capable of 2.5V gate drive D1 R 30mΩ DS(ON) D1 ▼▼▼▼ Low drive current I 6A D G2 ▼▼▼▼ Surface mount package S2 G1 SO-8 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and G2 G1 cost-effectiveness. S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units V Drain-Source Voltage 20 V DS V Gate-Source Voltage ±12 V GS 3 I @T =25℃ Continuous Drain Current 6 A D A 3 I @T =70℃ Continuous Drain Current 4.8 A D A 1 I Pulsed Drain Current 26 A DM P @T =25℃ Total Power Dissipation 2 W D A Linear Derating Factor 0.016 W/℃ T Storage Temperature Range -55 to 150 ℃ STG T Operating Junction Temperature Range -55 to 150 ℃ J Thermal Data Symbol Parameter Value Unit 3 Rthj-a Thermal Resistance Junction-ambient Max. 62.5 ℃/W Data and specifications subject to change without notice 200726042 AP9926GM o Electrical Characteristics@T =25 C(unless otherwise specified) j Symbol Parameter Test Conditions Min. Typ. Max. Units BV Drain-Source Breakdown Voltage V =0V, I =250uA 20 - - V DSS GS D ΔBV /ΔT Breakdown Voltage Temperature Coefficient Reference to 25℃, I =1mA - 0.03 - V/℃ DSS j D 2 R Static Drain-Source On-Resistance V =4.5V, I =6A - - 30 mΩ DS(ON) GS D V =2.5V, I =5.2A - - 45 mΩ GS D V Gate Threshold Voltage V =V , I =250uA - - 1.2 V GS(th) DS GS D g Forward Transconductance V =10V, I =6A - 20 - S fs DS D o I Drain-Source Leakage Current (T=25 C) uA j DSS V =20V, V =0V - - 25 DS GS o Drain-Source Leakage Current (T=70 C) uA j V =20V ,V =0V - - 250 DS GS I Gate-Source Forward Leakage V =12V - - 100 nA GSS GS nA Gate-Source Reverse Leakage V =-12V - - -100 GS 2 nC Q Total Gate Charge I =6A - 23 35 g D Q Gate-Source Charge V =20V - 4.5 7 nC gs DS Gate-Drain ("Miller") Charge V =5V - 7 11 nC Q gd GS 2 ns t Turn-on Delay Time V =10V - 30 60 d(on) DS t Rise Time I =1A - 70 140 ns r D ns t Turn-off Delay Time R =6Ω,V =5V - 40 80 d(off) G GS t Fall Time R =10Ω - 65 130 ns f D C Input Capacitance V =0V - 1035 - pF iss GS pF C Output Capacitance V =20V - 320 - oss DS pF C Reverse Transfer Capacitance f=1.0MHz - 150 - rss Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units A I Continuous Source Current ( Body Diode ) V =V =0V , V =1.3V - - 1.54 S D G S 2 V Forward On Voltage T =25℃, I =1.7A, V =0V - 0.78 1.2 V SD j S GS Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 2 3.Surface mounted on 1 in copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad. AP9926GM 20 25 o o T =150 C C T =25 C C 4.5V 4.0V 16 20 4.5V 4.0V 3.5V 3.5V 12 15 3.0V 8 10 3.0V 2.5V 2.5V 4 5 2.0V V = 2 .0V GS V =1.5V GS 0 0 0 0.4 0.8 1.2 0 0.4 0.8 1.2 1.6 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 50 I =6A I =6A D D V =2.5V GS V =4.5V GS 1.5 40 4.5V 1.2 30 0.9 20 0.6 10 -50 0 50 100 150 -50 0 50 100 150 o o T , Junction Temperature ( C) T , Junction Temperature ( C) j j Fig 3. R v.s. Junction Temperature Fig 4. Normalized On-Resistance DSON v.s. Temperature R (mohm) I , Drain Current (A) DS(ON) D Normalized R DS(ON) I , Drain Current (A) D AP9926GM 2.5 8 7 2 6 5 1.5 4 1 3 2 0.5 1 0 0 25 50 75 100 125 150 0 50 100 150 o o T , Case Temperature ( C) c T ( C ) c Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Duty Factor = 0.5 0.2 10 1ms 0.1 0.1 10ms 0.05 1 0.02 PDM 100ms 0.01 t 0.01 1s Single Pulse T o 0.1 T =25 C C 10s Duty Factor = t/T Single Pulse Peak T = P x R + T j DM thja a DC o R =135 C/W thja 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.1 1 10 100 V (V) DS t , Pulse Width (S) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance I (A) I , Drain Current (A) D D P (W) D Normalized Thermal Response (R ) thja AP9926GM f=1.0MHz 10000 12 V =10V DS V =15V DS 9 V =20V DS 6 1000 Ciss Ciss Ciss Ciss 3 Coss Coss Coss Coss Crss Crss Crss Crss 0 100 0 9 18 27 36 45 1 101928 V (V) DS Q , Total Gate Charge (nC) G Fig 9. Typical Gate Charge v.s. V Fig 10. Typical Capacitance v.s. V GS DS 10 1.2 o 0.95 T =150 C j o T =25 C j 0.7 1 0.45 0.2 0.1 -50 0 50 100 150 0 0.4 0.8 1.2 1.6 o T , Junction Temperature ( C ) V (V) j SD Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature IF (A) V , Gate to Source Voltage (V) GS C (pF) V (V) th AP9926GM V DS R 90% D V TO THE D DS OSCILLOSCOPE 0.8 x RATED V DS R ~ G G 10% + S V GS 5V V GS - t t d(off) d(on) t t f r Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform V G V DS Q TO THE G D OSCILLOSCOPE 10V 0.8 x RATED V DS ~ Q G Q GS GD V S GS + 1~3 mA - I I G D Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform