This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as modified herein. The manufacturing flow described in the STANDARD DIE PRODUCTS PROGRAM brochure at http://www.analog.com/aerospace is to be considered a part of this specification. This data sheet specifically details the space grade version of this product. A more detailed operational description and a complete data sheet for commercial product grades can be found at www.analog.com/DAC08 The complete part number(s) of this specification follow: Part Number Description DAC08-000C 8-Bit High-Speed Multiplying D/A Converter DAC08R000C Radiation guaranteed 8-Bit High-Speed Multiplying D/A Converter I OUT Supply Voltage (V+ to V-) ......................................................... 36V dc Logic Inputs ............................................................................... V- to (V- plus 36V dc) Logic Control Voltage (V ) ........................................................ V- to V+ LC Analog Current Outputs (at V- = 15V) ....................................... 4.25mA Reference Input (V to V ) ................................................ V- to V+ REF+ REF- Reference Input Differential Voltage (V to V ) ................ ±18V dc REF+ REF- Reference Input current (I ) ................................................ 5mA VREF+ Storage Temperature Range .................................................... -65C to +125C Ambient Operating Temperature Range (T ) ............................ -55C to +125C A Junction Temperature (T ).................................................. ........ +150°C J Absolute Maximum Ratings Notes: 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. In accordance with class-K version of MIL-PRF-38534, Appendix C, Table C-II, except as modified herein. (a) Qual Sample Size and Qual Acceptance Criteria – 25/2 (b) Qual Sample Package – DIP (c) Pre-screen electrical test over temperature performed post-assembly prior to die qualification.    %I O  %V %I O  %V -       Table I Notes: 1. V = ±15V, I = 2mA, and T = +25C, unless otherwise specified. S REF A    %I O  %V %I O  %V -     Table II Notes: 1. V = ±15V, I = 2mA, unless otherwise specified. S REF 2. When the device is used in an un-biased state at high temperature only, and subsequently biased, the device supply currents may rise 30% above specification for as long as 30 seconds. 3. Devices tested at 100K. 4. This parameter not tested post irradiation.  5.1 HTRB is not applicable for this drawing. 5.2 Burn-in is per MIL-STD-883 Method 1015 test condition B or C. 5.3 Steady state life test is per MIL-STD-883 Method 1005.