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Part Number Description Manufacturer Price & Lead Time
GT15Q102 GT15Q102 TOSHIBA Request Quote
GT15Q311 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT TOSHIBA Request Quote
GT20D101 N Channel Type (high Power Amplifier Application) TOSHIBA Request Quote
GT20D201 P Channel Type (high Power Amplifier Applications) TOSHIBA Request Quote
GT20G101 N CHANNEL IGBT (STROBE FLASH APPLICATIONS) TOSHIBA Request Quote
GT20G101SM N Channel IGBT (strobe Flash Applications) TOSHIBA Request Quote
GT20G102 N Channel IGBT (strobe Flash Applications) TOSHIBA Request Quote
GT20G102SM N Channel IGBT (strobe Flash Applications) TOSHIBA Request Quote
GT20J101 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT TOSHIBA Request Quote
GT20J301 N Channel (high Power Switching, Motor Control Applications) TOSHIBA Request Quote
GT20J311 GT20J311 TOSHIBA Request Quote
GT20J311SM Vces (volts) = 600 ; Ic (amps) = 20 ; Vce (sat) Max = 2.7 ; Ton (usec) = ; TOSHIBA Request Quote
GT20J321 High Power Switching Applications Fast Switching Applications TOSHIBA Request Quote
GT25G101 N Channel IGBT (strobe Flash Applications) TOSHIBA Request Quote
GT25G101SM N Channel IGBT (strobe Flash Applications) TOSHIBA Request Quote
GT25G102 N Channel IGBT (strobe Flash Applications) TOSHIBA Request Quote
GT25G102SM N Channel IGBT (strobe Flash Applications) TOSHIBA Request Quote
GT25J101 N Channel (high Power Switching, Motor Control Applications) TOSHIBA Request Quote
GT25J102 N Channel (high Power Switching, Motor Control Applications) TOSHIBA Request Quote
GT25Q101 IGBT TOSHIBA Request Quote
GT25Q102 N Channel Ibgt (high Power Switching Applications) TOSHIBA Request Quote
GT25Q301 GT25Q301 TOSHIBA Request Quote
GT30J101 Silicon N Channel IGBT TOSHIBA Request Quote
GT30J121 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT TOSHIBA Request Quote
GT30J301 GT30J301 TOSHIBA Request Quote
GT30J311 GT30J311 TOSHIBA Request Quote
GT30J311SM Vces (V) = 600 ; Ic (A) = 30 ; Vce (sat) (V) = 2.7 ; PC (W) = ; TOSHIBA Request Quote
GT30J322 N Channel Mos Type (The 4th Generation Current Resonance Inverter Switching Applications) TOSHIBA Request Quote
GT30J324 Insulated Gate Bipolar Transistor Silicon N Channel IGBT TOSHIBA Request Quote
GT40G121 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT TOSHIBA Request Quote
GT40M101 N Channel IGBT (high Power Switching Applications) TOSHIBA Request Quote
GT40M301 N Channel Tmos Type(high Power Swithcing Applications) TOSHIBA Request Quote
GT40Q321 Voltage Resonance Inverter Switching Application TOSHIBA Request Quote
GT40Q322 Voltage Resonance Inverter Switching Application TOSHIBA Request Quote
GT40T101 N Channel Mos Type (high Power Swithcing Applications) TOSHIBA Request Quote
GT40T301 Insulated Gate Bipolar Transistor Silicon N Channel IGBT TOSHIBA Request Quote
GT50G321 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT TOSHIBA Request Quote
GT50J102 GT50J102 TOSHIBA Request Quote
GT50J121 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT TOSHIBA Request Quote
GT50J301 N Channel IGBT (high Power Switching, Motor Control Applications) TOSHIBA Request Quote
GT50J322 GT50J322 TOSHIBA Request Quote
GT50J325 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT TOSHIBA Request Quote
GT5G103 N Channel Mos Type (strobe Flash Applications) TOSHIBA Request Quote
GT5G131 Strobe Flash Applications TOSHIBA Request Quote
GT5J301 GT5J301 TOSHIBA Request Quote
GT5J311 N Channel IGBT(high Power Switching, Motor Control Applications) TOSHIBA Request Quote
GT5J311SM Vces (V) = 600 ; Ic (A) = 5 ; Vce (sat) (V) = 2.7 ; PC (W) = ; TOSHIBA Request Quote
GT5J321 High Power Switching Applications TOSHIBA Request Quote
GT5J331(SM) N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) TOSHIBA Request Quote
GT60J321 The 4th Generation Soft Switching Applications TOSHIBA Request Quote
GT60J322 The 4th Generation Soft Switching Applications TOSHIBA Request Quote
GT60M104 N Channel IGBT (high Power Switching Applications) TOSHIBA Request Quote
GT60M301 Toshiba GT60M301 Transistor - N Channel Mos Type (high Power Switching Applications) TOSHIBA Request Quote
GT60M302 N Channel Mos Type (high Power Switching Applications) TOSHIBA Request Quote
GT60M303 GT60M303 TOSHIBA Request Quote
GT60M322 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT TOSHIBA Request Quote
GT60M323 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT TOSHIBA Request Quote
GT60N321 High Power Switching Applications The 4th Generation TOSHIBA Request Quote
GT80J101 N Channel Mos Type (high Power Switching Applications) TOSHIBA Request Quote
GT8G103 N Channel Mos Type (strobe Flash Applications) TOSHIBA Request Quote
GT8G121 N Channel Mos Type (strobe Flash Applications) TOSHIBA Request Quote
GT8G131 N Channel Mos Type (strobe Flash Applications) TOSHIBA Request Quote
GT8G132 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT TOSHIBA Request Quote
GT8J101 GT8J101 TOSHIBA Request Quote
GT8J102 Vces (volts) = 600 ; Ic (amps) = 8 ; Vce (sat) Max = 4 ; Ton (usec) = ; TOSHIBA Request Quote
GT8J102SM N Channel IGBT(high Power Switching, Motor Control Applications) TOSHIBA Request Quote
GT8Q101 N Channel IGBT(high Power Switching, Motor Control Applications) TOSHIBA Request Quote
GT8Q102 GT8Q102 TOSHIBA Request Quote
GT8Q102SM N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) TOSHIBA Request Quote
HC123 DUAL MONOSTABLE MULTIVIBRATOR. RETRIGGERBLE/NON-RETRIGGERBLE TOSHIBA Request Quote
HC125 QUAD BUS BUFFER TOSHIBA Request Quote
HC257 QUAD 2-CHANEL MULTIPLEXER (3-STATE) TOSHIBA Request Quote
HC4052 8-CHANNEL ANALOG MULTIPLEXER/DEMULITIPLEXER TOSHIBA Request Quote
HC646 OCTAL BUS TRANSCEIVER/REGISTER(3-STATE) TOSHIBA Request Quote
J680 TOSHIBA Request Quote
K170 FET, Silicon N Channel Junction Type(for Low Noise Audio Amplifier) TOSHIBA Request Quote
k246 N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT, IMPEDANCE CONVERTER and DC-AC HIGH INPUT TOSHIBA Request Quote
K2717 N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER and MOTOR TOSHIBA Request Quote
K2750 N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER TOSHIBA Request Quote
M12JZ47 Ac Power Control Applications TOSHIBA Request Quote
OR8GU41 Diffused Type (high Speed Rectifier Applications) TOSHIBA Request Quote
P1001A Toshiba Transistor Silicon Npn Epitaxial Type (pct Process) TOSHIBA Request Quote
P100A Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications TOSHIBA Request Quote
P1014 SWITCHING ,INVERTER CIRCUIT,INTERFACE CIRCUIT and DRIVER CIRCUIT APPLICATIONS TOSHIBA Request Quote
P1015 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications TOSHIBA Request Quote
P80C35 SWITCHING ,INVERTER CIRCUIT,INTERFACE CIRCUIT and DRIVER CIRCUIT APPLICATIONS TOSHIBA Request Quote
PA75358CP Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications TOSHIBA Request Quote
QPI1 TL RICOH VOLTAGE REGULATORTL RICOH VOLTAGE REGULATOR TOSHIBA Request Quote
RN1001 SWITCHING ,INVERTER CIRCUIT,INTERFACE CIRCUIT and DRIVER CIRCUIT APPLICATIONS TOSHIBA Request Quote
RN1002 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications TOSHIBA Request Quote
RN1003 SWITCHING ,INVERTER CIRCUIT,INTERFACE CIRCUIT and DRIVER CIRCUIT APPLICATIONS TOSHIBA Request Quote
RN1004 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications TOSHIBA Request Quote
RN1005 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications TOSHIBA Request Quote
RN1006 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications TOSHIBA Request Quote
RN1007 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications TOSHIBA Request Quote
RN1008 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications TOSHIBA Request Quote
RN1009 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications TOSHIBA Request Quote
RN1010 Toshiba Transistor Silicon Npn Epitaxial Type (pct Process) (bias Resistor Builtin Transistor) TOSHIBA Request Quote
RN1011 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications TOSHIBA Request Quote
RN1101 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor builtin Transistor) TOSHIBA Request Quote
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